A semiconductor device includes a substrate including a first region, and a second region, a first gate structure and a second gate structure on the substrate of the first region, a third gate structure and a fourth gate structure on the substrate of the second region, a first interlayer insulating film on the substrate of the first region and including a first lower interlayer insulating film and a first upper interlayer insulating film, a second interlayer insulating film on the substrate of the second region and including a second lower interlayer insulating film and a second upper interlayer insulating film, a first contact between the first gate structure and the second gate structure and within the first interlayer insulating film, and a second contact formed between the third gate structure and the fourth gate structure and within the second interlayer insulating film.

Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gates above the quantum well stack; and a plurality of second gates above the quantum well stack; wherein the plurality of first gates are arranged in electrically continuous rows extending in a first direction, and the plurality of second gates are arranged in electrically continuous rows extending in a second direction perpendicular to the first direction.

Quantum dot devices, and related systems and methods, are disclosed herein. In some embodiments, a quantum dot device may include a quantum well stack; a plurality of first gates above the quantum well stack; and a plurality of second gates above the quantum well stack; wherein the plurality of first gates are arranged in electrically continuous rows extending in a first direction, and the plurality of second gates are arranged in electrically continuous rows extending in a second direction perpendicular to the first direction.

A metal oxide semiconductor, MOS, device (405) is described that includes a gate terminal, at least one source terminal and at least one drain terminal, wherein at least one source terminal and at least one drain terminal are formed of metal and are connected to a number of respective contact vias. A plurality of local interconnect layers, LIL, (470) are connected respectively to the least one source terminal and at least one drain terminal through the number of respective contact vias, wherein the at least one source terminal and the at least one drain terminal respectively connected to the plurality of LIL (470) are configured such that: the at least one source terminal and the at least one drain terminal do not overlap in a first direction (602) and a second direction (604) that is orthogonal to the first direction (602); and the at least one source terminal and the at least one drain terminal do not overlap or only a proportion of the at least one source terminal and the at least one drain terminal overlap in a third direction (606), where the third direction (606) is orthogonal to both the first direction (602) and the second direction (604).

A metal oxide semiconductor, MOS, device (405) is described that includes a gate terminal, at least one source terminal and at least one drain terminal, wherein at least one source terminal and at least one drain terminal are formed of metal and are connected to a number of respective contact vias. A plurality of local interconnect layers, LIL, (470) are connected respectively to the least one source terminal and at least one drain terminal through the number of respective contact vias, wherein the at least one source terminal and the at least one drain terminal respectively connected to the plurality of LIL (470) are configured such that: the at least one source terminal and the at least one drain terminal do not overlap in a first direction (602) and a second direction (604) that is orthogonal to the first direction (602); and the at least one source terminal and the at least one drain terminal do not overlap or only a proportion of the at least one source terminal and the at least one drain terminal overlap in a third direction (606), where the third direction (606) is orthogonal to both the first direction (602) and the second direction (604).

A semiconductor device includes a single diffusion break (SDB) structure dividing a fin-shaped structure into a first portion and a second portion, an isolation structure on the SDB structure, a first spacer adjacent to the isolation structure, a metal gate adjacent to the isolation structure, a shallow trench isolation (STI around the fin-shaped structure, and a second isolation structure on the STI. Preferably, a top surface of the first spacer is lower than a top surface of the isolation structure and a bottom surface of the first spacer is lower than a bottom surface of the metal gate.

A fin-type field effect transistor comprising a substrate, at least one gate stack and epitaxy material portions is described. The substrate has fins and insulators located between the fins, and the fins include channel portions and flank portions beside the channel portions. The at least one gate stack is disposed over the insulators and over the channel portions of the fins. The epitaxy material portions are disposed over the flank portions of the fins and at two opposite sides of the at least one gate stack. The epitaxy material portions disposed on the flank portions of the fins are separate from one another.

The present disclosure, in some embodiments, relates to an integrated circuit. The integrated circuit includes first and second source/drain regions on or within a substrate. A first gate is arranged over the substrate between the first source/drain region and the second source/drain region. A first middle-end-of-the-line (MEOL) structure is arranged over the second source/drain region and a second MEOL structure is arranged over a third source/drain region. A conductive structure contacts the first MEOL structure and the second MEOL structure. A second gate is separated from the first gate by the second source/drain region. The conductive structure vertically and physically contacts a top surface of the second gate that is coupled to outermost sidewalls of the second gate. A plurality of conductive contacts are configured to electrically couple an interconnect wire and the first MEOL structure along one or more conductive paths extending through the conductive structure.

Embodiments of mechanisms for forming a semiconductor device are provided. The semiconductor device includes a substrate. The semiconductor device also includes a first fin and a second fin over the substrate. The semiconductor device further includes a first gate electrode and a second gate electrode traversing over the first fin and the second fin, respectively. In addition, the semiconductor device includes a gate dielectric layer between the first fin and the first gate electrode and between the second fin and the second gate electrode. Further, the semiconductor device includes a dummy gate electrode over the substrate, and the dummy gate electrode is between the first gate electrode and the second gate electrode. An upper portion of the dummy gate electrode is wider than a lower portion of the dummy gate electrode.

A semiconductor structure is provided. The semiconductor structure includes a first gate-all-around FET over a substrate, and the first gate-all-around FET includes first nanostructures and a first gate stack surrounding the first nanostructures. The semiconductor structure also includes a first FinFET adjacent to the first gate-all-around FET, and the first FinFET includes a first fin structure and a second gate stack over the first fin structure. The semiconductor structure also includes a gate-cut feature interposing the first gate stack of the first gate-all-around FET and the second gate stack of the first FinFET.