A bipolar junction transistor (BJT) and a diode including fin structures are provided in the present invention. In the BJT and the diode of the present invention, first doped layers are formed in a first fin and below first epitaxial structures in the first fin, and the first doped layers are connected with one another for improving related electrical performance of the BJT and the diode including fin structures.

A lateral bipolar junction transistor (BJT) magnetic field sensor that includes a layout of two or more adjacent lateral BJT devices. Each BJT includes a semiconductor base region of a first conductivity type doping, a semiconductor emitter region of a second conductivity type doping and laterally contacting the base region; and a first semiconductor collector region of a second conductivity type doping contacting said base region on an opposite side thereof. A second collector region of the second conductivity type doping is also formed contacting the base region on the opposite side thereof in spaced apart relation with the first collector region. The first adjacent lateral BJT device includes the emitter, base and first collector region and the second adjacent lateral BJT device includes the emitter, base and second collector region. The sensor induces a detectable difference in collector current amounts in the presence of an external magnetic field transverse to a plane defined by the layout.

A semiconductor device comprises a transistor in a semiconductor body having a first main surface and a second main surface, the first main surface being opposite to the second main surface. The transistor comprises a source region at the first main surface, a drain region, a body region, a drift zone, and a gate electrode at the body region. The body region and the drift zone are disposed along a first direction between the source region and the drain region, the first direction being parallel to the first main surface. The gate electrode is disposed in trenches extending in the first direction. The transistor further comprises an insulating layer adjacent to the second main surface of the body region. The source region vertically extends to the second main surface.

A semiconductor device (300) comprising: a doped semiconductor substrate (302); an epitaxial layer (304), disposed on top of the substrate, the epitaxial layer having a lower concentration of dopant than the substrate; a switching region disposed on top of the epitaxial layer; and a contact diffusion (350) disposed on top of the epitaxial layer, the contact diffusion having a higher concentration of dopant than the epitaxial layer; wherein the epitaxial layer forms a barrier between the contact diffusion and the substrate.

After forming a trench extending through an insulator layer and an underlying top semiconductor portion that is comprised of a first semiconductor material and a dopant of a first conductivity type to define an emitter and a collector on opposite sides of the trench in the top semiconductor portion, an intrinsic base comprising a second semiconductor material having a bandgap less than a bandgap of the first semiconductor material and a dopant of a second conductivity type opposite the first conductivity type is formed in a lower portion the trench by selective epitaxial growth. The intrinsic base protrudes above the top semiconductor portion and is laterally surrounded by entire top semiconductor portion and a portion of the insulator layer. An extrinsic base is then formed on top of the intrinsic base to fill a remaining volume of the trench by a deposition process.

The present invention provides a lateral IGBT transistor comprising a bipolar transistor and an IGFET. The lateral IGBT comprises a low resistive connection between the drain of the IGFET and the base of the bipolar transistor, and an isolating layer arranged between the IGFET and the bipolar transistor. The novel structure provides a device which is immune to latch and gives high gain and reliability. The structure can be realized with standard CMOS technology available at foundries.

The invention provides a semiconductor device layout structure disposed in an active region. The semiconductor device layout structure includes a first well region having a first conduction type. A second well region having a second conduction type opposite the first conduction type is disposed adjacent to and enclosing the first well region. A first doped region having the second conduction type is disposed within the first well region. A second doped region having the second conduction type is disposed within the first well region. The second doped region is separated from and surrounds the first doped region. A third doped region having the second conduction type is disposed within the second well region.

Device structures and fabrication methods for a heterojunction bipolar transistor. A first base layer is formed on a first device region of a substrate. A first emitter is formed that defines a first junction with the first base layer. A second base layer is formed on a second device region of a substrate. A second emitter is formed that defines a second junction with the second base layer. The first base layer and the second base layer differ in thickness, composition, concentration of an electrically-active dopant, or a combination thereof.

A fin-type bipolar semiconductor device includes a base region having a first portion in a semiconductor substrate and a first semiconductor fin on the adjacent first portion, a collector region having a second portion in the semiconductor substrate and a second semiconductor fin on the adjacent second portion, and an emitter region having a third region in the semiconductor substrate and a third semiconductor fin on the adjacent third portion. The second portion is adjacent the first portion, and the third portion is adjacent the first portion and forms an emitter junction in the semiconductor substrate. The second portion is not adjacent to the third portion. The first, second, and third semiconductor fins are physically separated from each other. The fin-type bipolar device exhibits low leakage current, good linearity and uniformity of electrical characteristics to facilitate device matching.

A semiconductor device includes a bipolar junction transistor (BJT) structure including emitters in a first well having a first conductive type, collectors in respective second wells, the second wells having a second conductive type different from the first conductive type and being spaced apart from each other with the first well therebetween, and bases in the first well and between the emitters and the collectors. The BJT structure includes active regions having different widths that form the emitters, the collectors, and the bases.