A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than /2n.sub.1, and the second transparent dielectric layer has a thickness of m/4n.sub.2, wherein m is an odd number, is an emission wavelength of the light-emitting layer, n.sub.1 is a refractive index of the first transparent dielectric layer, and n.sub.2 is a refractive index of the second transparent dielectric layer and is greater than n.sub.1.

A micro light emitting diode (LED) having a high light extraction efficiency includes a bottom conductive layer, a light emitting layer on the bottom conductive layer, and a top conductive structure on the light emitting layer. The micro LED additionally includes a conductive side arm electrically connecting the sidewall of the light emitting layer with the bottom conductive layer, and a reflective bottom dielectric layer arranged under the light emitting layer and above the bottom conductive layer. In some embodiments, the micro LED further includes an ohmic contact between the top conductive structure and the light emitting layer that has a small area and is transparent, thereby increasing the light emergent area and improving the light extraction efficiency.

A micro light emitting diode (LED) having a high light extraction efficiency includes a bottom conductive layer, a light emitting layer on the bottom conductive layer, and a top conductive structure on the light emitting layer. The micro LED additionally includes a conductive side arm electrically connecting the sidewall of the light emitting layer with the bottom conductive layer, and a reflective bottom dielectric layer arranged under the light emitting layer and above the bottom conductive layer. In some embodiments, the micro LED further includes an ohmic contact between the top conductive structure and the light emitting layer that has a small area and is transparent, thereby increasing the light emergent area and improving the light extraction efficiency.

A micro-LED structure includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extrudes along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by the top edge of the first type conductive layer.

A light-emitting device includes a backplane, a light emitting diode (LED) emitter attached to the backplane, the LED emitter comprising an LED emitting stack that is made of a semiconductor material, and comprises an n-type region and a p-type region and a quantum well therebetween, and a light-reflecting partition attached to the backplane, wherein the light-reflecting partition is made of the semiconductor material, the light-reflecting partition forms a cavity surrounding the LED emitter, and a surface of the light-reflecting partition is coated with a first reflective layer.

A display device can include a substrate, a reflective functional layer disposed on the substrate, a light emitting diode disposed on the reflective functional layer, a semiconductor element disposed on the substrate, a common line disposed on the substrate, a first connection electrode electrically connecting the light emitting diode and the semiconductor element, and a second connection electrode electrically connecting the light emitting diode and the common line. The center of the light emitting diode is spaced apart from the center of the reflective functional layer.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

A circuit board for a light emitting module, comprises a plurality of mounting positions for LEDs, wherein the mounting positions are distributed in a regular two-dimensional pattern on a first surface side of the circuit board. The circuit board is characterized by (i) a plurality of transparent domains, each transparent domain extending around one mounting position of the plurality of mounting positions, and (ii) a plurality of thermally conductive domains, each thermally conductive domain being electrically and thermally connected to at least one mounting position. An average area of the electrically conductive domains is at least 2% of an average area of the transparent domains. Each thermally conductive domain of the plurality of thermally conductive domains comprises at least a portion, which extends as a two-dimensional area on a surface of the circuit board.

In an embodiment an optoelectronic component with an epitaxial layer sequence comprises a functional inner region having a first electrical contact and a second electrical contact opposite the first electrical contact, as well as semiconductor layers arranged between the first electrical contact and the second electrical contact configured to generate light. The semiconductor layers comprise a base area that increases towards the second electrical contact. A dielectric passivation layer is arranged on the side walls of the semiconductor layers. A mirror layer surrounds the passivation layer at a distance thereby forming a gap. The second electrical contact and a plane of the gap surrounding the second electrical contact form a common light-emitting surface.

A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the first semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the reflection pattern, in which the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness.