An optical sensor device comprises an element-mounting portion, an optical sensor element provided on the element-mounting portion, a lead having a first contact region connected to the optical sensor element and a second contact region for an external connection, and a resin-encapsulating portion which covers at least a light-receiving plane of the optical sensor element. The resin-encapsulating portion comprises a resin and a glass filler including borosilicate glass dispersed in the resin. The transmissivity of the resin-encapsulating portion in one example is equal to or more than 40% in a wavelength range between 300 nm to 400 nm, and in another example is equal to or more than 60% in a wavelength range between 300 nm and 350 nm.

An apparatus including a bridge member and a clamp is disclosed. The bridge member is positioned in a first plane and has a substrate with a first surface and a second surface; and a plurality of distinct conductive pillars formed on the second surface of the substrate. The clamp has a body, a proximal end and a distal end. The body is positioned in a second plane above the first plane with the second plane being within 2 degrees of parallel to the first plane. The proximal end is positioned along the second plane; and the distal end has a plurality of prongs. The distal end is offset from the second plane in a direction toward the bridge member such that each prong contacts the first surface of the substrate.

Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming an upper interlayer dielectric overlying an optical modulator and a photodetector, where the photodetector has a shoulder and a plug. An etch stop is formed overlying the upper interlayer dielectric. The etch stop is a first, second, and third distance from an uppermost surface of the optical modulator, the shoulder, and the plug, respectively, where the first, second, and third distances are all different from each other. A first, second, and third contact are formed through the upper interlayer dielectric, where the first, second and third contacts are in electrical communication with the optical modulator, the shoulder, and the plug, respectively.

An electronic component includes a base, a laminate of a plurality of conductive metal material layers, and a solder layer made of AuSn alloy solder. The laminate is disposed on the base. The solder layer is disposed on the laminate. The laminate includes a surface layer made of Au as the conductive metal material layer constituting an outermost layer. The surface layer includes a solder layer-disposing region in which the solder layer is disposed and a solder layer-empty region in which the solder layer is not disposed. The solder layer-disposing region and the solder layer-empty region are spatially separated from each other.

An electrical connector for electrically connecting multiple photovoltaic bus bars. A casing includes first and second opposing walls. An elastic strip is bent into a bent elastic strip with a first leg and a second leg. The bent elastic strip is disposed between the first and second walls of the casing with the first leg pressing against the first wall and the second leg pressing against the second wall. The bent elastic strip is configured to hold at least one of the photovoltaic bus bars between the first leg and the first wall and another of the photovoltaic bus bars between the second leg and the second wall. The bent elastic strip may be formed of resilient spring metal with a thickness and an elastic modulus. The thickness and/or the elastic modulus of the elastic strip is/are configured so that the bus bars are inserted without requiring a tool to open a space and so that the bus bars are removed from the connector without requiring a tool to break the electrical connection.

A semiconductor structure includes a silicon substrate, a protection layer, an electrical pad, an isolation layer, a redistribution layer, a conductive layer, a passivation layer, and a conductive structure. The silicon substrate has a concave region, a step structure, a tooth structure, a first surface, and a second surface opposite to the first surface. The step structure and the tooth structure surround the concave region. The step structure has a first oblique surface, a third surface, and a second oblique surface facing the concave region and connected in sequence. The protection layer is located on the first surface of the silicon substrate. The electrical pad is located in the protection layer and exposed through the concave region. The isolation layer is located on the first and second oblique surfaces, the second and third surfaces of the step structure, and the tooth structure.

An integrally packaged optronic integrated circuit device including an integrated circuit die containing at least one of a radiation emitter and radiation receiver and having a transparent packaging layer overlying a surface of the die, the transparent packaging layer having an opaque coating adjacent to edges of the layer.

Photoelectric conversion device incudes first region of first conductivity type arranged in semiconductor layer having first second surfaces, second region of second conductivity type arranged between the second surface and the first region and forming avalanche photodiode, separation region of the second conductivity type arranged between the first and second surfaces to surround the second region, contact region of the second conductivity type contacted to the separation region, first contact plug connected to the first region, and second contact plug connected to the contact region. The second region has shape of rectangle, and the second contact plug is arranged in diagonal direction of the rectangle. Distance between center of the first contact plug and center of the second contact plug is larger than distance between center of the second region and the center of the second contact plug.

A sensor package structure includes a substrate, a sensor chip and a ring-shaped solder mask frame those are disposed on the substrate, a ring-shaped support disposed on a top side of the annular solder mask frame, and a light permeable member that is disposed on the ring-shaped support. The sensor chip is electrically coupled to the substrate. A top surface of the sensor chip has a sensing region, and the sensing region is spaced apart from an outer lateral side of the sensor chip by a distance less than 300 m. The ring-shaped solder mask frame surrounds and contacts the outer lateral side of the sensor chip. The light permeable member, the ring-shaped support, and the sensor chip jointly define an enclosed space.

A packaged chip assembly with a semiconductor substrate, a semiconductor device integrally formed on or in the substrate's top surface, and first bond pads at the substrate's top surface electrically coupled to the semiconductor device. A second substrate includes a first aperture and one or more second apertures extending therethrough, second and third bond pads at the second substrate's top and bottom surfaces, respectively, and conductors electrically coupled to the second and third bond pads. The semiconductor substrate's top surface is secured to the second substrate's bottom surface such that the semiconductor device is aligned with the first aperture, and each of the first bond pads is aligned with one of the second apertures. A plurality of wires are each electrically connected between one of the first bond pads and one of the second bond pads and each passing through one of the one or more second apertures.