A method of manufacturing a light-emitting element includes: preparing a wafer including a substrate, and a semiconductor structure disposed on the substrate; and forming a plurality of light-emitting element regions by dividing the semiconductor structure. The forming of the plurality of light-emitting element regions includes: forming a plurality of first masks on the semiconductor structure such that each of the plurality of first masks covers a respective first region where one of the plurality of light-emitting element regions is to be formed, and each of the plurality of first masks has an area greater than an area of the respective first region in a plan view, and exposing the substrate through the semiconductor structure by removing a portion of the semiconductor structure that is not covered by the plurality of first masks.

A display device includes a stage, a bonding unit disposed on the stage and comprising a position detection sensor, a resin supply unit, and a light irradiation unit, and a fixing unit disposed closer to the stage than the bonding unit is to fix a target member. Embodiments align a display module such that a first side edge of the display module is disposed under the bonding unit. Embodiments move the position detection sensor along the first side edge of the display module to sense a first coating path; move the resin supply unit along the sensed first coating path to coat a first filling agent between the window and the display panel; and move the light irradiation unit along the sensed first coating path to cure the coated first filling agent to form a first filling layer.

A light emitting device is provided and includes a substrate, a plurality of light emitting elements, an intermediate layer, a partition wall, a light conversion element, and a layer. The light emitting elements is disposed on the substrate. The intermediate layer is disposed on the light emitting elements. The partition wall is disposed on the intermediate layer, wherein the partition wall includes a plurality of partition elements. The light conversion element is disposed between two of the partition elements, wherein the light conversion element corresponds to one of the light emitting elements. The layer is disposed between the intermediate layer and the light conversion element, wherein the layer is in contact with a sidewall of the partition wall.

A device for manufacturing a display apparatus includes a chamber including a first zone, a second zone, and a third zone arranged along a linear path, an inorganic film deposition mask disposed in the first zone, an organic film deposition mask disposed in the second zone, a deposition unit disposed in the third zone, and a susceptor which reciprocates between the first zone, the second zone, and the third zone.

In an embodiment a wafer includes a plurality of optoelectronic components and means for testing at least one of the optoelectronic components for at least one parameter, wherein the plurality of optoelectronic components includes at least one light-emitting layer, which is arranged between an insulating layer and a light emission layer, wherein the insulating layer of at least one optoelectronic component comprises a first contact and a second contact arranged on the light emission layer of the at least one optoelectronic component, and wherein the second contact is arranged outside a light emission surface of the at least one optoelectronic component.

Light emitting diode (LED) devices comprise: a stack of semiconductor layers including an active region and a phosphor layer on the semiconductor layers, the phosphor layer comprising: phosphor particles, a binder material, and polydisperse inorganic filler particles. a combined solid volume percentage of the phosphor particles and the polydisperse inorganic filler particles of greater than or equal to 70% and in some embodiments, less than or equal to 90%.

In an embodiment an optoelectronic component includes a carrier, an optoelectronic semiconductor chip and an encapsulation, wherein the semiconductor chip is fixed on a mounting surface of the carrier and is electrically conductively connected with the carrier, wherein the encapsulation is located around the semiconductor chip and covers the mounting surface at least partially, wherein the encapsulation includes a first layer and a second layer, wherein the first layer is arranged between the mounting surface and the second layer, wherein each of the first layer and the second layer is based on a silicone, and wherein the first layer and the second layer are directly adjacent to each other in a region of an interface.

A display apparatus including a display substrate, light emitting devices disposed on the display substrate, circuit electrodes disposed between the light emitting devices and the display substrate, and a transparent layer covering the light emitting devices and the circuit electrodes, in which at least one of the light emitting devices includes a first LED sub-unit configured to emit light having a first wavelength, a second LED sub-unit adjacent to the first LED sub-unit and configured to emit light having a second wavelength, a third LED sub-unit adjacent to the second LED sub-unit and configured to emit light having a third wavelength, and a substrate disposed on the third LED sub-unit, in which a difference in refractive indices between the transparent layer and air is less than a difference in refractive indices between the substrate and a semiconductor layer of the third LED sub-unit.

A method for transferring light emitting elements during manufacture of a display panel includes providing light emitting elements; providing a first electromagnetic plate defining adsorption positions; providing a receiving substrate defining receiving areas; energizing the first electromagnetic plate to magnetically adsorb one of the light emitting elements at each adsorption position; facing the first electromagnetic plate to the receiving substrate; and transferring the light emitting elements to one corresponding receiving area of the receiving substrate.

An ultra-high-resolution micro-display screen and a manufacturing process therefor. In the process, multiple LED light-emitting structures are formed by means of pre-arranging isolation columns and a conductive solder on a drive backplate, performing alignment-free pressing on the driving backplate (10) and an LED epitaxial wafer, and performing exposure and development on the LED epitaxial wafer. According to the method, accurate alignment does not need to be performed, and there are few pixel defects. LED units of a micro-display screen are embedded into the conductive solder, such that a high soldering adhesion is achieved, and the reliability and stability of the display screen can be improved.