A multilayer semiconductor device structure having different circuit functions on different semiconductor device layers is provided. The semiconductor structure comprises a first semiconductor device layer fabricated on a bulk substrate. The first semiconductor device layer comprises a first semiconductor device for performing a first circuit function. The first semiconductor device layer includes a patterned top surface of different materials. The semiconductor structure further comprises a second semiconductor device layer fabricated on a semiconductor-on-insulator (SOT) substrate. The second semiconductor device layer comprises a second semiconductor device for performing a second circuit function. The second circuit function is different from the first circuit function. A bonding surface coupled between the patterned top surface of the first semiconductor device layer and a bottom surface of the SOT substrate is included. The bottom surface of the SOT substrate is bonded to the patterned top surface of the first semiconductor device layer via the bonding surface.

A method of manufacturing a semiconductor device includes configuring a layout pattern; and forming conductive lines corresponding to the layout pattern on a substrate, wherein configuring the layout pattern includes: arranging pre-conductive patterns and post-conductive patterns for a first logic cell, a second logic cell, and a third logic cell; rearranging the pre-conductive patterns and the post-conductive patterns so that two conductive patterns that are adjacent to a boundary between two adjacent logic cells from among the first logic cell, the second logic cell, and the third logic cell are formed by different photolithography processes; and arranging conductive patterns for a dummy cell arranged between the second logic cell and the third logic cell.

A FET based double balanced mixer (DBM) that exhibits good conversion gain and IIP3 values and provides improved linearity and wide bandwidth. In one embodiment, a first balun is configured to receive a local oscillator (LO) signal and generate two balanced LO signals that are coupled to two corresponding opposing nodes of a four-node FET ring. A second balun is configured to pass an RF signal on the unbalanced side. The FET ring includes at least four FETs connected as branches of a ring, with the source of each FET connected to the drain of a next FET in the ring. Each FET is preferably fabricated as, or configured as, a low threshold voltage device having its gate connected to its drain, which causes the FET to operate as a diode, but with the unique characteristic of having close to a zero turn-on voltage.

A method of forming a vertical finFET and vertical diode device on the same substrate, including forming a channel layer stack on a heavily doped layer; forming fin trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the fin trenches to form a dummy layer liner; forming a vertical fin in the fin trenches with the dummy layer liner; forming diode trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the diode trenches to form a dummy layer liner; forming a first semiconductor segment in a lower portion of the diode trenches with the dummy layer liner; and forming a second semiconductor segment in an upper portion of the diode trenches with the first semiconductor segment, where the second semiconductor segment is formed on the first semiconductor segment to form a p-n junction.

A method of forming a vertical finFET and vertical diode device on the same substrate, including forming a channel layer stack on a heavily doped layer; forming fin trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the fin trenches to form a dummy layer liner; forming a vertical fin in the fin trenches with the dummy layer liner; forming diode trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the diode trenches to form a dummy layer liner; forming a first semiconductor segment in a lower portion of the diode trenches with the dummy layer liner; and forming a second semiconductor segment in an upper portion of the diode trenches with the first semiconductor segment, where the second semiconductor segment is formed on the first semiconductor segment to form a p-n junction.

A method of forming a vertical finFET and vertical diode device on the same substrate, including forming a channel layer stack on a heavily doped layer; forming fin trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the fin trenches to form a dummy layer liner; forming a vertical fin in the fin trenches with the dummy layer liner; forming diode trenches in the channel layer stack; oxidizing at least a portion of the channel layer stack inside the diode trenches to form a dummy layer liner; forming a first semiconductor segment in a lower portion of the diode trenches with the dummy layer liner; and forming a second semiconductor segment in an upper portion of the diode trenches with the first semiconductor segment, where the second semiconductor segment is formed on the first semiconductor segment to form a p-n junction.

A semiconductor device includes a semiconductor substrate defining a major surface. The device further includes a first region including at least a first pillar of a first conductivity type extending in a vertical orientation with respect to the major surface. The device further includes a second region of the first conductivity type. The first pillar includes a higher doping concentration than the second region. The device further includes a Schottky contact coupled to the second region.

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate; and a passive polysilicon device disposed over the semiconductor substrate. The passive polysilicon device further includes a polysilicon feature; and a plurality of electrodes embedded in the polysilicon feature.

An integrated circuit is provided having a semiconductor structure, the semiconductor structure including a vertical field-effect transistor; and a diode wherein the vertical field-effect transistor and the diode are co-integrated in the semiconductor structure.

In some examples, a transistor includes a drain, a channel, and a gate. The channel surrounds the drain and has a channel length to width ratio. The gate is over the channel to provide an active channel region that has an active channel region length to width ratio that is greater than the channel length to width ratio.