A display device and a method of fabricating a display device. The display device includes a substrate including an emission area and a subarea adjacent to the emission area, a bank disposed in the emission area of the substrate, a height difference compensation pattern disposed in the subarea of the substrate, a first electrode and a second electrode that are disposed on the bank, the first electrode and the second electrode being spaced apart from each other, and a light-emitting element disposed in the emission area, between the first electrode and the second electrode.

A display device with high display quality is provided. A display device with low power consumption is provided. In the display device, a first transistor, a second transistor, a first conductive layer, and a light-emitting diode package are included in a pixel. The light-emitting diode package includes a first light-emitting diode, a second light-emitting diode, a second conductive layer, a third conductive layer, and a fourth conductive layer. The first light-emitting diode includes a first electrode and a second electrode. The second light-emitting diode includes a third electrode and a fourth electrode. One of a source and a drain of the first transistor is electrically connected to the first electrode through the second conductive layer.

10 One of a source and a drain of the second transistor is electrically connected to the third electrode through the third conductive layer. The first conductive layer is electrically connected to each of the second electrode and the fourth electrode through the fourth conductive layer. A constant potential is supplied to the first conductive layer.

A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.

Structures and methods are disclosed for fabricating optoelectronic solid state array devices. In one case a backplane and array of micro devices is aligned and connected through bumps.

A unit pixel is provided. The unit pixel includes a transparent substrate, a first light blocking layer disposed on the transparent substrate and having windows that transmit light, an adhesive layer covering the first light blocking layer, a plurality of light emitting devices disposed on the adhesive layer to be arranged on the windows, and a second light blocking layer covering side surfaces of the light emitting devices.

An optoelectronic light emitting device includes a substantially transparent first base body, a second base body arranged adjacent to the first base body, and an optoelectronic foil having a first region arranged on the first base body and a second region arranged on the second base body. The optoelectronic foil includes a flexible carrier substrate, at least one electrical line and a plurality of selectively controllable optoelectronic semiconductor components which are arranged on the carrier substrate. An at least partially transparent adhesive layer is arranged between the optoelectronic semiconductor components and the first or second base body and connects the optoelectronic foil to the first or second base body.

A hybrid panel and a spliced panel are disclosed. The hybrid panel includes a display panel and a light-emitting diode (LED) substrate, and the display panel includes a display region and a non-display region disposed around the display region. The LED substrate is formed on the display panel. The LED substrate is located in the non-display region.

A display substrate (910), comprising a plurality of pixel units (P11, P12, P21, P22) and at least one compensation circuit. At least one pixel unit (P11, P12, P21, P22) comprises: a main light-emitting unit and an auxiliary light-emitting unit; and the at least one compensation circuit is connected to the auxiliary light-emitting unit of the at least one pixel unit (P11, P12, P21, P22). The at least one compensation circuit is configured to measure the brightness or temperature of the at least one pixel unit (P11, P12, P21, P22) and control the auxiliary light-emitting unit of the at least one pixel unit (P11, P12, P21, P22) to emit light according to a measurement result.

This application provides a display panel, a preparation method therefor, and a display apparatus. A first display region of the display panel has an OLED pixel, a second display region has a Micro LED pixel, the Micro LED pixel has a light emitting region and a light transmission region, and a camera is disposed below the second display region. After the Micro LED pixel is used in the second display region, display pixels having a same area in the first display region and the second display region can be designed, to implement display effect consistency between the first display region and the second display region. Because a size of the Micro LED pixel for light emitting is small, it can be ensured that the Micro LED pixel has a large light transmission region, so that light transmittance of the second display region can be improved.

Disclosed is a Light-Emitting Device-Thin Film Transistor (LED-TFT) integration structure, comprising a substrate comprising a light emitting area and a driving area; a metal reflective film formed on the substrate; a buffer layer formed on the metal reflective film; LED disposed in the light emitting area; a protective layer formed on the LED; a thin film transistor disposed in the driving area and configured to drive the LED; and an ohmic contact metal for electrically connecting a cathode of the LED with the metal reflective film, wherein the LED and the thin film transistor are integrally formed on the substrate.