The present invention relates to a solid-state optically activated switch that may be used as limiting switch in a variety of applications or as a high voltage switch. In particular, the switch may incorporate the photoconductive properties of a semiconductor to provide the limiting function in a linear mode. In one embodiment, a configuration of the switch allows for greater than 99.9999% off-state transmission and an on-state limiting of less than 0.0001% of the incident signal.

Described herein are polymer complexes, including polymer gels and polymer foams, containing electrically conductive polymers and ionic liquids. The polymer complexes described herein are useful as components of electronic devices.

A method for the production of a transparent conductor deposit on a substrate, the method comprising: providing a substrate formed from a first material; depositing a film of a second material on the substrate; causing the film to crack so as to provide a plurality of recesses; depositing a conductive material in the recesses; and removing the film from the substrate so as to yield a transparent conductive deposit on the substrate.

Integrated circuits and methods of producing such integrated circuits are provided. In an exemplary embodiment, a method of producing an integrated circuit includes forming an upper interlayer dielectric overlying an optical modulator and a photodetector, where the photodetector has a shoulder and a plug. An etch stop is formed overlying the upper interlayer dielectric. The etch stop is a first, second, and third distance from an uppermost surface of the optical modulator, the shoulder, and the plug, respectively, where the first, second, and third distances are all different from each other. A first, second, and third contact are formed through the upper interlayer dielectric, where the first, second and third contacts are in electrical communication with the optical modulator, the shoulder, and the plug, respectively.

A solar cell is provided with an electrode layer on a photovoltaic conversion section including a crystalline silicon substrate. Deposition of the electrode layer is performed by a deposit-up method with a substrate being mounted in such a manner that an opening edge portion of a mask plate having an opening is in contact with the substrate. The opening edge portion of the mask plate has a tapered surface at a part that is in contact with first principal surface of the substrate, the tapered surface conforming to a deflection angle at a peripheral end of the substrate. A solar cell having a large effective area can be prepared by suppressing deposition of electrode layer on mask-covered region due to penetration.

A sample transfer system includes a sample-mounting member mounting a sample thereonto; and a sample-moving device lifting the sample to move the sample between the sample-mounting member and another location, wherein the sample-mounting member comprises: a first predetermined sample-mounting region mounting the sample; and a recessed part on or around a side of the first predetermined sample-mounting region, wherein the sample-moving device comprises a first sample-holding device, the first sample-holding device comprising: a sample-holding surface facing the sample to be lifted; a first contact member contacting with part of the sample; and a movement mechanism moving the first contact member in a direction along the sample-holding surface, and wherein part of the contact member enters the recessed part when the first sample-holding device is brought in proximity to the first predetermined sample-mounting region, the part of the contact member moving within the recessed part by operating the movement mechanism.

There is provided an image sensor including: a plurality of first electrodes respectively formed within a plurality of pixel areas, the pixel areas being formed on a substrate; a protection layer formed on an upper surface of the substrate and including a plurality of contact holes respectively exposing the first electrodes of the pixel areas; a plurality of auxiliary electrodes respectively contacting with the first electrodes through the contact holes and extending to an upper surface of the protection layer of the pixel area; a photoconductive layer formed on both the first electrodes and on the auxiliary electrodes; and a second electrode formed on the photo conductive layer.

A system and method for a multi-sensor pixel architecture for use in a digital imaging system is described. The system includes at least one semiconducting layer for absorbing radiation incident on opposites of the at least one semiconducting layer along with a set of electrodes on one side of the semiconducting layer for transmitting a signal associated with the radiation absorbed by the semiconducting layer.

A solar cell includes: first and second conductivity type diffusion layers which are formed on a backside of a light-receiving surface of a substrate, first and second electrode portions, first and second electrode line portions, and first and a second electrode bus bar portions; a first insulator film which is formed to cover a side portion and a top of the second electrode portion in an intersection region of the second electrode portion and the first electrode bus bar portion, a second insulator film which is formed to cover a side portion and a top of the first electrode portion in an intersection region of the first electrode portion and the second electrode bus bar portion, wherein the second electrode portion is formed continuously in a line shape under the first insulator film, and the first electrode portion is formed continuously in a line shape under the second insulator film.

Optically sensitive devices include a device comprising a first contact and a second contact, each having a work function, and an optically sensitive material between the first contact and the second contact. The optically sensitive material comprises a p-type semiconductor, and the optically sensitive material has a work function. Circuitry applies a bias voltage between the first contact and the second contact. The optically sensitive material has an electron lifetime that is greater than the electron transit time from the first contact to the second contact when the bias is applied between the first contact and the second contact. The first contact provides injection of electrons and blocking the extraction of holes. The interface between the first contact and the optically sensitive material provides a surface recombination velocity less than 1 cm/s.