The present disclosure relates to a solar cell and a solar cell panel including the same, and more particularly, to a solar cell with an improved structure and an improved manufacturing process and a solar cell panel including the same.

A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.

Approaches for the foil-based metallization of solar cells and the resulting solar cells are described. In an example, a solar cell includes a substrate. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the substrate. A conductive contact structure is disposed above the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal seed material regions providing a metal seed material region disposed on each of the alternating N-type and P-type semiconductor regions. A metal foil is disposed on the plurality of metal seed material regions, the metal foil having anodized portions isolating metal regions of the metal foil corresponding to the alternating N-type and P-type semiconductor regions.

This application provides a photovoltaic module, and relates to the field of photovoltaic technologies. The photovoltaic module includes a conductive interconnection member. The conductive interconnection member is electrically connected to front electrodes of a first solar cell and back electrodes of a second solar cell adjacent to the first solar cell. A distance between a first solar cell edge and the front electrode adjacent to the first solar cell edge is D1, a distance between a second solar cell edge and the front electrode adjacent to the second solar cell edge is D3, a distance between a fourth solar cell edge and the back electrode adjacent to the fourth solar cell edge is D2, a distance between a third solar cell edge and the back electrode adjacent to the third solar cell edge is D4. A sum of D1 and D2 is greater than a sum of D3 and D4.

A solar cell includes a silicon substrate, a first doped region, and a second doped region. The first doped region includes a first passivated contact region on the silicon substrate and a second passivated contact region on the first passivated contact region. The first passivated contact region includes a first doped layer, a first passivation layer, and a second doped layer. The second passivated contact region includes a second passivation layer and a third doped layer. The second doped region includes a third passivation layer. Each of the first and third passivation layers includes a porous structure. One of the first and second doped regions is a P-type doped region, the other of the first and second doped regions is an N-type doped region, and a hole density of a corresponding passivation layer in the P-type doped region is greater than that in the N-type doped region.

A photovoltaic module and a method for manufacturing the photovoltaic module are provided. The photovoltaic module includes a battery module including multiple cell string groups and multiple first connection structures. Each cell string group includes multiple cell strings arranged along a first direction. Each cell string includes multiple solar cells and multiple second connection structures. Each solar cell includes multiple first grid lines and multiple second grid lines. There is a distance L between a first grid line and a second grid line adjacent to the first grid line in the first direction. A second connection structure connected to an end of a respective middle first connection structure is spaced apart by a distance S in the first direction from an adjacent second connection structure connected to an end of another middle first connection structure adjacent to the respective middle first connection structure and the distance S is greater than the distance L.

Disclosed is a method to fabricate an interdigitated back contact photovoltaic device including: providing a substrate of a first-type doping being an n-type or a p-type doping; realizing on a back side a semiconducting doped structure including individual doped layers portions of the first type doping and a semiconducting doped structure of a second type; realizing a conductive layer on top of the semiconducting structure; realizing a patterned isolation resist layer having contact apertures and isolation apertures onto the conductive layer; further applying conductive pads to the contact apertures; and etching the conductive layer up to the second-type doped layer to realize trenches to electrically separate first type charge collecting structures from second type charge collecting structures. Also disclosed is an interdigitated back contact photovoltaic device as manufactured according to the disclosed method of fabrication, and a photovoltaic system including at least two interdigitated back contact photovoltaic devices.

The present disclosure provides a solder ribbon processing mechanism, comprising a plurality of first solder ribbon clamping assemblies, a plurality of second solder ribbon clamping assemblies, a plurality of first solder ribbon cutters, and a plurality of second solder ribbon cutters. The plurality of first solder ribbon clamping assemblies cooperate to clamp all odd numbered solder ribbons of a plurality of solder ribbons, and the first solder ribbon cutters are configured for cutting off all the odd numbered solder ribbons at corresponding positions, so as to obtain a plurality of first solder ribbon groups. The plurality of second solder ribbon clamping assemblies cooperate to clamp all second numbered solder ribbons of a plurality of solder ribbons, and the second solder ribbon cutters are configured for cutting off all the even numbered solder ribbons at corresponding positions, so as to obtain a plurality of second solder ribbon groups.

Disclosed are a solar cell and a photovoltaic module. In the solar cell, first and second conductive doped portions are arranged in an edge region of a first surface of a substrate. Each first conductive doped portion includes a first doped portion and second doped portions disposed on two opposite sides of the first doped portion, and a dopant concentration of the first doped portion is greater than that of the second doped portions. A passivation layer is disposed on the first surface. The second edge fingers are disposed on the second conductive doped portions respectively. Each first edge finger includes a first sub-finger and a second sub-finger, disposed on the second doped portions respectively. The second sub-finger is connected to the first sub-finger via the first doped portion. An edge busbar disposed on the passivation layer and on the first doped portion is connected to the second edge fingers.

Approaches for fabricating one-dimensional metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate and parallel along a first direction to form a one-dimensional layout of emitter regions for the solar cell. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal lines corresponding to the plurality of alternating N-type and P-type semiconductor regions. The plurality of metal lines is parallel along the first direction to form a one-dimensional layout of a metallization layer for the solar cell.