An electrical device that includes a first semiconductor device positioned on a first portion of a substrate and a second semiconductor device positioned on a third portion of the substrate, wherein the first and third portions of the substrate are separated by a second portion of the substrate. An interlevel dielectric layer is present on the first, second and third portions of the substrate. The interlevel dielectric layer is present over the first and second semiconductor devices. An optical interconnect is positioned over the second portion of the semiconductor substrate. At least one material layer of the optical interconnect includes an epitaxial material that is in direct contact with a seed surface within the second portion of the substrate through a via extending through the least one interlevel dielectric layer.

A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e.sup.2 times the electric field intensity of the terahertz wave at the interface.

There is provided an optical sensor in which a reduction in size of a light-receiving part is achieved. This optical sensor is installed in a device, and includes a light-receiving element 4 for receiving light coming from outside toward the device. The optical sensor detects the state of the received light. A linear optical waveguide 2 is connected to the light-receiving element 4 so as to be capable of light propagation. The optical waveguide 2 has a front end portion serving as a light entrance portion on which light coming from the outside of the device is incident.

A photon counting detector is provided for electrometric waves having a wide wavelength range, such as X-rays, gamma rays, and excited weak fluorescence, by use of a common detecting structure. The detector includes an optical connecting part opposed to an emission surface of a columnar-body array and can adjust a spreading range of light emitted from an emission end face of each of a plurality of columnar bodies. The detector also includes a group of APD (avalanche photodiode) clusters opposed to the emission surface via the optical connecting part. In the group of APD clusters, NN (N is a positive integer of 2 or more) APDs each having a light receiving face are arranged two-dimensionally and the output signals from the NN APDs are combined by a wired logical addition circuit so as to form an APD cluster serving as one pixel. A plurality of such clusters are arranged two-dimensionally.

An optical communication device, reception apparatus, transmission apparatus and transmission and reception system are disclosed. The optical communication device includes a drive circuit substrate. A first through via extends through the drive circuit substrate and is configured to electrically connect an optical element disposed on a first surface side of the drive circuit substrate to a drive circuit disposed on a second surface side of the drive circuit substrate. A positioning element is attached to an interposer substrate and is configured to align optical axes of a first lens that is attached to a lens substrate and that faces a second lens that is disposed on the first surface side of the drive circuit substrate. A second through via extends through the interposer substrate and electrically connects the drive circuit to a signal processing circuit disposed on a signal processing substrate positioned above the interposer substrate.

A sensor unit (100) provided with a substrate (101), a plurality of light-receiving units (102) that are provided on the substrate (101) and detect light, and a diffraction grating layer (103) that is provided on the substrate (101) and the light-receiving units (102) and has at least two diffraction means for diffracting light of corresponding wavelengths and condensing the light onto the light-receiving units, wherein at least two of the diffraction means are composed from holograms formed on a first diffraction grating layer and at least a portion of the plurality of holograms formed on the first diffraction grating layer overlap at least partially with another adjacent hologram.

The optical receptacle of the invention includes plural first optical surfaces allowing light emitted from plural light emitting elements to be incident thereon, plural second optical surfaces emitting the light incident on the first optical surfaces toward plural optical transmission members, and a third optical surface reflecting the light incident on the first optical surfaces toward the second optical surfaces. The distances between the center of the first optical surface and the light-emitting surface of the light emitting element and between the center of the second optical surface and the light-emitting surface of the light emitting element is longer toward the center from both ends of the row. The center-to-center distances of the first optical surfaces and of the second optical surfaces are shorter, respectively, than the distance between optical axes of light emitted from the light emitting elements and the center-to-center distance of light-receiving surfaces of optical transmission members.

Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.

The present invention relates to plasmonic components, more particularly plasmonic waveguides, and to plasmonic photodetectors that can be used in the field of microoptics and nanooptics, more particularly in highly integrated optical communications systems in the infrared range (IR range) as well as in power engineering, e.g. photovoltaics in the visible range. The present invention also specifies a method for producing a plasmonic component, more particularly for photodetection on the basis of internal photoemission.

Disclosed is a triazine ring-containing hyperbranched polymer containing a repeating unit structure represented by the expression (1). By this means, it is possible to achieve a triazine ring-containing polymer which, alone, has high heat resistance, high transparency, high refractive index, high light resistance, high solubility, low volume shrinkage without adding metal oxides; and also a membrane-forming composition containing the same. ##STR00001##
In the formula, R and R represent independently a hydrogen atom, an alkyl group, an alkoxy group, an aryl group, or an aralkyl group, and A represents an alkylene group optionally having a branched or alicyclic structure of 1 to 20 carbon atoms.