A microlens array includes microlenses disposed in order and a low refractive index layer that contains a hollow filler and a medium and is formed on the microlenses and that has a lower refractive index than the refractive index of the microlenses. The proportion of white pixels in a binarized plan view image of the low refractive index layer is 76% or less.

A semiconductor structure for a photonic integrated circuit. The semiconductor structure comprises a waveguide and an active component of the photonic integrated circuit. An electrically resistive material is between the waveguide and the active component along a light propagation axis between the waveguide and the active component. The electrically resistive material has an electrical resistivity higher than the waveguide.

Provided is a component arrangement, including a carrier substrate; a spacer which is arranged on the carrier substrate so as to surround an installation space and has an outlet opening on a side facing away from the carrier substrate; an optical component arranged in the installation space; a contact connection which electrically conductively connects the optical component to external contacts arranged outside the installation space; a cover substrate which is arranged on the spacer and with which the outlet opening is covered in a light-permeable manner; and a light-reflecting surface which is formed on an anisotropically etched silicon component and is arranged in the installation space as an inclined surface at an angle of approx. 45 relative to the surface of the carrier substrate facing the installation space, in such a way that light radiated in a horizontal direction onto the light-reflecting surface can be radiated out in the vertical direction through the opening and the cover substrate, and vice versa.

Backside illuminated photosensitive devices and associated methods are provided. In one aspect, for example, a backside-illuminated photosensitive imager device can include a semiconductor substrate having multiple doped regions forming a least one junction, a textured region coupled to the semiconductor substrate and positioned to interact with electromagnetic radiation where the textured region includes surface features sized and positioned to facilitate tuning to a preselected wavelength of light, and a dielectric region positioned between the textured region and the at least one junction. The dielectric region is positioned to isolate the at least one junction from the textured region, and the semiconductor substrate and the textured region are positioned such that incoming electromagnetic radiation passes through the semiconductor substrate before contacting the textured region. Additionally, the device includes an electrical transfer element coupled to the semiconductor substrate to transfer an electrical signal from the at least one junction.

The present disclosure relates to an optical sensor module, an optical sensing accessory, and an optical sensing device. An optical sensor module comprises a light source, a photodetector, and a substrate. The light source is configured to convert electric power into radiant energy and emit light to an object surface. The photodetector is configured to receive the light from an object surface and convert radiant energy into electrical current or voltage. An optical sensing accessory and an optical sensing device comprise the optical sensor module and other electronic modules to have further applications.

A solid-state imaging device includes: a light-receiving pixel part configured to be formed on a semiconductor substrate; a black-level reference pixel part configured to be formed on the semiconductor substrate; and a multilayer interconnect part configured to be provided over the semiconductor substrate. The multilayer interconnect part includes an insulating layer formed over the semiconductor substrate and metal interconnect layers formed as a plurality of layers in the insulating layer. The multilayer interconnect part has a first light-blocking film formed above an area between first metal interconnects of a first metal interconnect layer as one of the metal interconnect layers above the black-level reference pixel part, and a second light-blocking film that is connected to the first light-blocking film and is formed of a second metal interconnect layer over the first metal interconnect layer.

An optical filtering structure comprising a stack of layers forming a first filter letting pass a first spectral band, and a second filter adjacent to the first filter and which lets pass a second spectral band comprising: a plurality of dielectric layers common to the two filters and of different refractive indices, n first metal layers common to the two filters, m second metal layers arranged only in the second filter, and wherein at least one of said dielectric layers comprises, in the first filter, a thickness different to that in the second filter, and/or wherein at least one dielectric layer is arranged only in the second filter, n being an integer greater than or equal to 0, and m being an integer greater than or equal to 1.

An image pickup apparatus includes photoelectric conversion units each including a first semiconductor region of a first conductivity type and a semiconductor region of a second conductivity type disposed in contact with the first semiconductor region, a potential barrier formed between photoelectric conversion units, and a contact plug disposed in an image sensing area. The number of contact plugs is smaller than the number of photoelectric conversion units. The photoelectric conversion units include first and second photoelectric conversion units and are arranged such that at least two first photoelectric conversion units are adjacent in a first direction. The potential barrier includes a first part formed between the two first photoelectric conversion units disposed adjacently and a second part formed between first and second photoelectric conversion units adjacent to each other. The contact plug is located closer to the first part than to the second part.

The present disclosure relates to OLED and PV devices including transparent electrodes that are formed of conductive nanostructures and methods of improving light out-coupling in OLED and input-coupling in PV devices.

This optical module comprises a substrate, light-emitting elements, a ferrule, an optical receptacle, through-holes and an adhesive. The optical receptacle includes two support units, and an optical receptacle body that has a first optical surface and a second optical surface. The through-holes include two first through-holes surrounded by the leading ends of the support units and the ferrule, and two second through-holes which are surrounded by the optical receptacle body, the support units and the ferrule. Thus, even using the adhesive to fix the optical receptacle and the ferrule to the substrate, it is possible to optically connect multiple optical transmission bodies with multiple light-emitting elements or multiple light-receiving elements in a suitable manner.