An object is to provide an optical modulator in which a light receiving element is disposed on a substrate configuring the optical modulator and which is capable of suppressing a decrease in the frequency bandwidth of the light receiving element even in a case in which two radiated lights from a combining part in a Mach-Zehnder type optical waveguide are received and monitored at the same time. The optical modulator includes a substrate 1, an optical waveguide including a Mach-Zehnder type optical waveguide formed in the substrate, and a modulation electrode (not illustrated) for modulating light waves that propagate through the optical waveguide, alight receiving element 5 is disposed to bridge over an output waveguide 24 configuring the Mach-Zehnder type optical waveguide so as to receive two radiated lights being radiated from a combining part in the Mach-Zehnder type optical waveguide, and, in the light receiving element, two or more light receiving areas (51 and 52) are formed apart from each other on a substrate of light receiving element 55.

Provided is a solar cell module comprising a back sheet including a reflective film including a deposited reflective layer including metal and having 2 or higher optical density (OD), and an UV blocking layer positioned below the reflective film and having 5% or lower transmittance of light at 380 nm wavelength.

A window structure includes a window, a design layer structure on the window, a light shield layer on the design layer structure, and a light absorption layer. The design layer structure includes a first hole exposing a portion of the window. The light shield layer includes a second hole in fluid communication with the first hole. The light absorption layer covers at least a portion of the design layer structure exposed by the first and second holes, and includes a third hole exposing a portion of the window. By including the light absorption layer of a gray or black color to cover exposed portions of the design layer structure, a vignette about an image caused by the design layer structure is prevented.

A curable resin composition, for forming a first optical member of an optical member set, the optical member having the first optical member and a second optical member covered with the first optical member, the first optical member being formed by curing a siloxane resin, comprising: a siloxane resin, a surfactant, and a solvent, the siloxane resin and the surfactant being contained in the solvent, the surfactant having a polyoxyalkylene structure, the siloxane resin being defined in 65% by mass to 100% by mass thereof having a particular polysilsesquioxane structure.

Light-receiving elements and the like that can more simply absorb and transmit light are provided.

A Light-receiving element includes a lens unit condensing incident light to emit the light from an emission surface, an absorption layer arranged on the emission surface of the lens unit to absorb part of the condensed light and transmit the remaining condensed light, and a detection layer placed on the absorption layer to detect intensity of light emitted from the lens unit, on the basis of intensity of light absorbed by the absorption layer.

A device for color imaging including an optical sensor having light sensitive pixels with a metal film disposed over the light sensitive pixels. The metal film has a group of nano-holes arranged over the pixels according to a periodic lattice formation and is configured to pass light of a preselected first range of wavelengths. The group of nano-holes arranged over an adjoining group of pixels is configured to pass light having ranges of wavelengths different from the first range of wavelengths.

Techniques, systems, and devices are disclosed to provide multilayer platforms for integrating semiconductor integrated circuit dies, optical waveguides and photonic devices to provide intra-die or inter-die optical connectivity. For example, an integrated semiconductor device having integrated circuits respectively formed on different semiconductor integrated circuit dies is provided to include a carrier substrate structured to form openings on a top side of the carrier substrate; semiconductor integrated circuit dies fixed to bottom surfaces of the openings of the carrier substrate, each semiconductor integrated circuit die including a semiconductor substrate and an integrated circuit formed on the semiconductor substrate to include one or more circuit components, and each semiconductor integrated circuit die being structured to have a top surface substantially coplanar with the top side of the carrier substrate; and planar layers formed on top of the top surfaces of the semiconductor integrated circuit dies and the top side of the carrier substrate to include optical waveguides and photonic devices to provide (1) intra-die optical connectivity for photonic devices associated with a semiconductor integrated circuit die, or (2) inter-die optical connectivity for photonic devices associated with different semiconductor integrated circuit dies.

A method for forming an image sensor device is provided. The method includes forming a photodetector in a semiconductor substrate and forming a shielding layer over the semiconductor substrate. The method also includes forming a dielectric layer over the shielding layer and partially removing the dielectric layer to form a recess. The method further includes partially removing the shielding layer through the recess. In addition, the method includes forming a filter in the recess after the shielding layer is partially removed.

This optical receptacle comprises the following: an optical-receptacle body that is formed via injection molding; a first optical surface; a second optical surface on a first side; a first concavity that has an angled surface whereby light that has entered via the first optical surface is reflected towards the second optical surface; a gate section on a third side; a first through-hole and a second through-hole that extend in the direction of the axis of light traveling between the second optical surface and a light-transporting body; and a second concavity located between the first concavity and the third side. The part of the second concavity closest to a second side is closer to the abovementioned first side than the part of the gate section closest to the first side is. The first through-hole also opens to a first-side surface and a second-side surface of the second concavity.

An integrated grating element system includes a first transparent layer formed on an optoelectronic substrate layer which includes at least two optoelectronic components, a first grating layer disposed on the first transparent layer which includes at least two sub-wavelength grating elements formed therein aligned with active regions of the optoelectronic components, and a second grating layer placed at a distance from the first grating layer such that light propagates between a diffraction grating element formed within the second grating layer and the at least two sub-wavelength grating elements.