A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first insulator, a first metal oxide, a first conductor, a second conductor, and a third conductor. The first metal oxide includes a first depressed portion, a second depressed portion, and a third depressed portion positioned between the first depressed portion and the second depressed portion. The first conductor is provided to fill the first depressed portion, and the second conductor is provided to fill the second depressed portion. A top surface of the first conductor and a top surface of the second conductor are level with or substantially level with a top surface of the first metal oxide. The first insulator is provided inside the third depressed portion. The third conductor is provided over the first insulator and includes a region overlapping with the first metal oxide with the first insulator therebetween.

A display apparatus with high luminance and a long lifetime is provided. The display apparatus includes a first layer and a second layer positioned above the first layer. The first layer includes a substrate and a plurality of driver circuit regions, and the second layer includes a plurality of display regions. The substrate is a glass substrate. Each of the plurality of driver circuit regions includes a driver circuit, and the driver circuit includes a transistor including silicon in a channel formation region. Each of the plurality of display regions includes a pixel, and the pixel includes a light-emitting diode and a transistor including a metal oxide in a channel formation region. Specifically, the light-emitting diode is preferably a micro light-emitting diode. The driver circuit included in one of the plurality of driver circuit regions has a function of driving the display pixel included in one of the plurality of display regions.

An active matrix substrate includes, in order, a pixel TFT including an oxide semiconductor layer, a first interlayer insulating layer covering the oxide semiconductor layer and a gate electrode, a first organic insulating layer, and a pixel electrode. A first pixel contact hole is formed in the first interlayer insulating layer, and a second pixel contact hole is formed in the first organic insulating layer. The pixel electrode is made of a transparent conductive material, a first electrode layer includes a first portion in contact with a drain contact region of the oxide semiconductor layer in the first pixel contact hole and a second portion located in the second pixel contact hole, a second electrode layer includes a third portion in contact with the second portion and a fourth portion located on the first organic insulating layer, and a third electrode layer includes a fifth portion in contact with the fourth portion and a sixth portion located on the second organic insulating layer. A length of the second electrode layer in a row direction is less than or equal to a length of the third electrode layer in the row direction. The active matrix substrate further includes a second organic insulating layer filling the second pixel contact hole.

The present disclosure provides an array substrate and a manufacturing method for the array substrate. The manufacturing method includes: forming a light-shielding layer, a source, and a drain on the substrate by using a first photomask; forming a semiconductor layer, a gate insulating layer, and a gate which are laminated on the source, the drain, and light-shielding layer by using a second photomask; forming a dielectric layer on the gate and the substrate, and a via hole exposing the drain on the dielectric layer by using a third photomask; and forming a pixel electrode on the dielectric layer by using a fourth photomask.

An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 510.sup.19 atoms/cm.sup.3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

An organic light-emitting diode display includes an auxiliary connection line on a substrate; an auxiliary cathode on and connected to the auxiliary connection line; a passivation layer covering the auxiliary cathode; an overcoat layer on the passivation layer; a connection terminal connected to the auxiliary cathode on the overcoat layer; an undercut opening on the overcoat layer exposing a portion of the auxiliary cathode, an under area being in the undercut opening and under one side of the connection terminal; a bank having a size larger than the undercut opening and exposing the entire undercut opening; an organic emission layer on a region other than the under area in the undercut opening exposing the portion of the auxiliary cathode; and a cathode directly connected to the exposed portion of the auxiliary cathode on which the organic emission layer is not formed in the under area of the undercut opening.

A thin film transistor array substrate and a display device are provided. The thin film transistor array substrate includes a first semiconductor layer, a second semiconductor layer, a first gate electrode, a conductive layer, a second gate electrode, a third gate electrode, and an intermediate insulating layer. The first semiconductor layer and the second semiconductor layer are made of different semiconductor materials. The first gate electrode and the conductive layer overlap with the first semiconductor layer. The second gate electrode and the third gate electrode overlap with the second semiconductor layer. The intermediate insulating layer is disposed between the second semiconductor layer and the second gate electrode.

A transistor with small parasitic capacitance can be provided. A transistor with high frequency characteristics can be provided. A semiconductor device including the transistor can be provided. Provided is a transistor including an oxide semiconductor, a first conductor, a second conductor, a third conductor, a first insulator, and a second insulator. The first conductor has a first region where the first conductor overlaps with the oxide semiconductor with the first insulator positioned therebetween; a second region where the first conductor overlaps with the second conductor with the first and second insulators positioned therebetween; and a third region where the first conductor overlaps with the third conductor with the first and second insulators positioned therebetween. The oxide semiconductor including a fourth region where the oxide semiconductor is in contact with the second conductor; and a fifth region where the oxide semiconductor is in contact with the third conductor.

An object is to provide a display device with excellent display characteristics, where a pixel circuit and a driver circuit provided over one substrate are formed using transistors which have different structures corresponding to characteristics of the respective circuits. The driver circuit portion includes a driver circuit transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using a metal film, and a channel layer is formed using an oxide semiconductor. The pixel portion includes a pixel transistor in which a gate electrode layer, a source electrode layer, and a drain electrode layer are formed using an oxide conductor, and a semiconductor layer is formed using an oxide semiconductor. The pixel transistor is formed using a light-transmitting material, and thus, a display device with higher aperture ratio can be manufactured.

Provided are display panels and display apparatus. The display panel includes a driving array layer including a pixel circuit and a driving circuit configured to provide a control signal to the pixel circuit. The pixel circuit includes first and third transistors. The driving circuit includes second and fourth transistors. The first to fourth transistors include an active layer including silicon, an active layer including oxide semiconductor, an active layer including oxide semiconductor, and an active layer including silicon. The first and the third transistors are switching transistors of the pixel circuit, |W1/L1-W4/L4|<|W2/L2-W3/L3|; or the first and the third transistors are a driving transistor and a switching transistor of the pixel circuit, respectively, |W1/L1-W4/L4|>5*|W2/L2-W3/L3|; or the first and third transistors are a switching transistor and a driving transistor of the pixel circuit, respectively, 5*|W1/L1-W4/L4|<|W2/L2-W3/L3|.