A manufacturing method of a LED display is provided. A temporary substrate is provided, wherein the temporary substrate has a first adhesive layer and a plurality of first, second and third LED chips mounted on the first adhesive layer. A first transparent substrate is provided, the transparent substrate has a plurality of pixels disposed thereon, and each of the pixels comprises a first sub-pixel, a second sub-pixel and a third sub-pixel respectively surrounded by a light-insulating structure. Then, the temporary substrate and the first transparent substrate are bonded together, such that each of the first, second and third LED chips is correspondingly mounted in each of the first sub-pixels, the second sub-pixels and the third sub-pixels. After that, the temporary substrate is removed. A LED display manufactured by said method is also provided.

A display device in accordance with some embodiments may include a base layer, a first bank pattern and a second bank pattern on the base layer, and spaced apart from each other in a first direction, a first electrode overlapping the first bank pattern, a second electrode overlapping the second bank pattern, and a light emitting element aligned between the first electrode and the second electrode, wherein a distance between an end of the first electrode and an end of the first bank pattern differs from a distance between an end of the second electrode and an end of the second bank pattern in the first direction.

A display device is provided. The display device includes a substrate, a driving layer, a light-emitting element, and a light-shielding element. The substrate has a surface. The driving layer includes a thin-film transistor. The thin-film transistor is disposed on the surface. The light-emitting element has a P-end and an N-end. The light-emitting element is disposed on the driving layer and arranged in such a way that a virtual line connecting the P-end and the N-end is parallel to the surface of the substrate. The light-shielding element is disposed between the light-emitting element and the thin-film transistor for blocking a light emitted from the light-emitting element from irradiating the thin-film transistor.

Some embodiments of the present disclosure provide a display device including a base layer, a first electrode and a second electrode extending along a first direction on the base layer, and spaced apart from each other in a second direction crossing the first direction, and light emitting elements at least partially overlapping the first electrode and at least partially overlapping the second electrode, wherein at least one of the first electrode and the second electrode includes a concavo-convex portion in which at least a portion of one of the light emitting elements overlaps with respect to a third direction that is perpendicular to the first direction and to the second direction.

A manufacturing method of an electronic device includes: forming a conductive material layer on a substrate, the conductive material layer continuously extends from a first surface of the substrate to a second surface while passing through a side surface, wherein the side surface connects the first surface and the second surface, forming a first protection layer on the conductive material layer and patterning the conductive material layer by using the first protection layer as a mask to form an edge wire, wherein the edge wire is retracted relative to the first protection layer and forms an undercut structure, and forming a second protection layer on the substrate, wherein the second protection layer fills the undercut structure.

A display deice includes a pair of first color sub-pixels arranged in a display area in a first direction, each of the pair of first color sub-pixels including at least one first color light emitting element, and a bank enclosing the pair of first color sub-pixels. The bank includes at least two areas having different widths in an area corresponding to each of the pair of first color sub-pixels.

What is disclosed is structures and methods to integrate microdevices into system or receiver substrates. The integration of microdevices is facilitated by adding staging pads to microdevices before or after transferring. Creating stages after the transfer of a first microdevice to a substrate for the subsequent microdevice transfer to the first (or the second) microdevice transfer. The stage improves the surface profile of the substrate so that next microdevice can be transferred without the first microdevice on the substrate get damaged by or interfere with the surface of the donor or transfer head. Some embodiments further relate to tiled display device and more particularly, to stacking tiles to a backplane to form the tiled display device.

A light emitting device may include a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; a protective layer disposed on the electrode layer; and an insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer.

A display device includes a substrate; a plurality of pixels provided on the substrate; and a plurality of inorganic light emitting elements provided on each of the pixels. The inorganic light emitting elements each include a semiconductor substrate having a first face facing the substrate and a second face provided in a convex shape on a side opposite from the first face; and a plurality of semiconductor nanowires provided on the first face, the semiconductor nanowires extending in a direction perpendicular to the first face.

A display device including: a substrate having a display area and a non-display area extending around the display area, the display area having emission areas and a light blocking area; a thin film transistor layer on the substrate and including thin film transistors; a light emitting element layer on the thin film transistor layer and including light emitting elements; a wavelength conversion layer on the light emitting element layer to convert a peak wavelength of light provided from at least some of the light emitting elements; and a color filter layer on the wavelength conversion layer. The color filter layer includes: color filters in each of the emission areas; a first light blocking part in the light blocking area; and a second light blocking part in the non-display area.