A light source device includes: a mounting board; a plurality of light-emitting parts disposed on the mounting board, each of the plurality of light-emitting parts being configured to be individually turned on; a light-shielding member defining an opening; and a light-guide member supported by the light-shielding member, the light-guide member comprising a Fresnel lens portion, wherein, in a top view, the Fresnel lens portion is located within an area of the opening of the light-shielding member. In the top view, irradiation areas of the respective light-emitting parts are at least partially separated from each other.

Provided are a light emitting element and a display device comprising same. The light emitting element comprises: a first conductivity type semiconductor doped with a dopant having a first polarity, a second conductivity type semiconductor doped with a dopant having a second polarity opposite to the first polarity; an active layer between the first conductivity type semiconductor and the second conductivity type semiconductor; and an insulation film which surrounds at least a side surface of the active layer, wherein the insulation film includes an insulation coating film and at least one light conversion particle on at least a portion of the insulation coating film.

A light-emitting substrate, a display device, and an electronic apparatus are provided. The light-emitting substrate includes a base substrate, light-emitting units, and first driving signal line groups; the light-emitting unit includes light-emitting sub-units; the first driving signal line is configured to be connected to the first electrode terminal of the light-emitting sub-unit; a translation distance in the column direction is provided between a k-th light-emitting unit in the N-th column and a k-th light-emitting unit in the (N+1)-th column, and the translation distance is smaller than a spacing between two adjacent light-emitting units in a same column in the column direction; the first driving signal line group is between the N-th column of light-emitting units and the (N+1)-th column of light-emitting units and alternately passes through light-emitting units in the N-th column and the (N+1)-th column; and each light-emitting unit is passed by two adjacent first driving signal line groups.

An electronic device includes a conductive wire having a metal portion with openings. The openings include a first opening and a second opening arranged along a first direction, and the metal portion includes the first to fourth extending portions and the first to fourth joint portions. The first opening is surrounded by the first extending portion, the second extending portion, the first joint portion, and the second joint portion. The second opening is surrounded by the third extending portion, the fourth extending portion, the third joint portion, and the fourth joint portion. Along the first direction, a ratio of a first width sum of widths of the first extending portion, the second extending portion, the third extending portion, and the fourth extending portion to a second width sum of widths of the first joint portion and the third joint portion is in a range from 0.8 to 1.2.

Solid-state transducers (SSTs) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials.

A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.

A LED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface.

A light emitting device includes a substrate; a first frame located on the substrate; a second frame located on the substrate, the second frame being located inward of and spaced apart from the first frame; at least one first light emitting element located on the substrate in a first region located between the first frame and the second frame; at least one second light emitting element located on the substrate in a second region located inward of the second frame; and a sealing member covering the at least one first light emitting element and the at least one second light emitting element. The second frame includes a light-transmissive portion. A highest portion of the second frame is higher than a highest portion of the first frame.

In one example, a device includes a trench formed in a substrate. The trench includes a first end and a second end that are non-collinear. A first plurality of semiconductor pillars is positioned near the first end of the trench and includes integrated light sources. A second plurality of semiconductor pillars is positioned near the second end of the trench and includes integrated photodetectors.

A light emitting device is provided. The light emitting device includes a substrate and a plurality of light emitting elements disposed on a major surface of the substrate. The substrate includes a reflector recessed in the major surface and surrounding at least a portion of the plurality of light emitting elements.