An optoelectronic device including an array of light-emitting diodes and photoluminescent blocks opposite at least part of the light-emitting diodes, each light-emitting diode having a lateral dimension smaller than 30 m, each photoluminescent block including semiconductor crystals having an average size smaller than 1 m, dispersed in a binding matrix.

A display device using semiconductor light emitting devices is disclosed. The display device includes a substrate, a plurality of first electrodes disposed on the substrate, a light emitting device array comprising a plurality of semiconductor light emitting devices electrically connected to the first electrodes, constituting individual pixels, and having different brightnesses increasing from one side of a current input direction of each of the first electrodes to the other side of the current input direction, and a plurality of second electrodes electrically connected to the semiconductor light emitting devices. Thus, brightness variation caused by power loss may be reduced in a display device of PM type using light emitting device array, thereby reducing load effect that is a problem of the device of PM type using light emitting device array.

The invention disclosed a preparation method for a high-voltage LED device integrated with a pattern array, comprising the following process steps: providing a substrate, and forming a N-type GaN limiting layer, an epitaxial light-emitting layer and a P-type GaN limiting layer on the substrate in sequence; isolating the NGaN limiting layer, the epitaxial light-emitting layer and the PGaN limiting layer on the substrate into at least two or more independent pattern units by means of photo lithography and etching process, wherein each of the pattern unit is in a triangular shape, and very two adjacent pattern units are arranged in an opposing and crossed manner to form a quadrangle, and the quadrangles formed by a plurality of adjacent pattern units are distributed in array; and connecting each pattern unit with metal wires to form a series connection and/or a parallel connection, thereby forming a plurality of interconnected LED chips. For the purpose of improving the current distribution so as to increase the luminescent efficiency of the device, a current blocking layer is also arranged beneath the P-type metal contact of each unit in addition, an insulation material is also arranged to cover the surface of the chip so as to achieve the purposes of protecting the chip and increasing the light extraction efficiency of the chip.

A manufacturing method of a light-emitting device is disclosed. The method includes: providing a semiconductor wafer, including a substrate having a first surface and a second surface opposite to the first surface; and a semiconductor stack on the first surface; removing a portion of the semiconductor stack to form an exposed region; forming a first reflective structure on the exposed region; and providing a radiation on the second surface corresponding to a position of the first reflective structure.

Disclosed are a light emitting diode and a light emitting diode module. The light emitting diode module includes a printed circuit board and a light emitting diode joined thereto through a solder paste. The light emitting diode includes a first electrode pad electrically connected to a first conductive type semiconductor layer and a second electrode pad connected to a second conductive type semiconductor layer, wherein each of the first electrode pad and the second electrode pad includes at least five pairs of Ti/Ni layers or at least five pairs of Ti/Cr layers and the uppermost layer of Au. Thus a metal element such as Sn in the solder paste is prevented from diffusion so as to provide a reliable light emitting diode module.

The present disclosure relates to a method for manufacturing a self-assembled nano-scale LED electrode assembly and more particularly, to a method for manufacturing a self-assembled nano-scale LED electrode assembly in which a nano-scale LED device can be self-aligned on two different electrodes without being chemically and physically damaged and the number of nano-scale LED devices to be mounted can be remarkably increased, and alignment and electrical connection of the LED devices can be further improved.

A light emitting device package including a base including a top flat surface; an insulating layer on the base; a light emitting diode on the base; an optical member comprising a light transmissive material such that light emitted from the light emitting diode passes therethrough; a guiding member to guide the optical member, the guiding member having a ring shape; an electrical circuit layer electrically connected to the light emitting diode, the electrical circuit layer including an electrode portion and an extended portion, the electrode portion disposed inside the guiding member and electrically connected to the light emitting diode, the extended portion extended from the electrode portion to outside the guiding member; and an electrode layer on the electrode portion of the electrical circuit layer and electrically connected to the light emitting diode.

Disclosed is a light emitting apparatus which includes at least one light emitting device; a substrate under the light emitting device; a bonding member between the light emitting device and the substrate; and an adhesion member under the substrate, wherein the adhesion member includes at least one of benzotriazole and hydroxy group.

A full-color display panel includes a plurality of sub-pixel units. The sub-pixel unit includes an LED unit and a filter layer transmitting light of a specific color. The LED unit includes an LED semiconductor chip emitting light of a specific color. The LED semiconductor chips of the plurality of sub-pixel units are homochromatic LED semiconductor chips emitting light of a same color. In each sub-pixel unit, a position of the filter layer corresponds to a position of the LED semiconductor chip, and the filter layer is located on a side of the LED semiconductor chip that emits light.

The disclosed technology provides micro-assembled micro-LED displays and lighting elements using arrays of micro-LEDs that are too small (e.g., micro-LEDs with a width or diameter of 10 m to 50 m), numerous, or fragile to assemble by conventional means. The disclosed technology provides for micro-LED displays and lighting elements assembled using micro-transfer printing technology. The micro-LEDs can be prepared on a native substrate and printed to a display substrate (e.g., plastic, metal, glass, or other materials), thereby obviating the manufacture of the micro-LEDs on the display substrate. In certain embodiments, the display substrate is transparent and/or flexible.