The invention relates to an optoelectronic device (1) comprising light-emitting diodes produced in a material mostly comprising a same semiconductor compound and arranged such that: a plurality of N light-emitting diodes (40), N>2, are connected in series and capable of being forward-biased; at least one light-emitting diode (50) is connected in parallel to the plurality of the N light-emitting diodes (40), and capable of being reverse-biased thus forming a Zener diode; the number N of said light-emitting diodes (40) connected in series being adapted such that the sum of the N threshold voltages (Vs) is lower than the breakdown voltage (Vc) of the Zener diode.

A light-emitting diode package including a body and leads. The body comprising a mounting surface. The light emitting diode package also includes a light emitting diode chip including a substrate and a plurality of light emitting cells disposed on the substrate and positioned to be spaced apart from each other, each of the plurality of light emitting cells comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer. The light emitting diode package also includes a phosphor member disposed on the light-emitting diode chip and a distributed Bragg reflector disposed on the substrate and between the plurality of light emitting cells.

The disclosure concerns an infrared emitter is provided comprising a metalized membrane emitting infrared light in operation. The membrane comprises a two dimensional array of infrared wavelength sized through-holes and to each side a thin metal layer comprising also an array of through-holes. The through-holes are arranged as a two-dimensional periodic array and each of said through-holes have a cross section having a maximum and a minimum dimension of less than any wavelength of the emitted infrared light. The peak wavelength of the emitted infrared light is proportional to the periodicity of the through-holes. At least one of the metal layers is connected to an electrical current source that provides an electrical current that heats at least one of the metal layers so that a narrow bandwidth and highly directive light beam of infrared light is emitted. The membrane is arranged on a membrane support and both are made of a material that resists to temperatures higher than 400.

A light-emitting diode chip package is provided. The light-emitting diode chip package includes a substrate; a light-emitting diode chip set (LED chip set) disposed over the substrate, wherein the LED chip set is formed by a plurality of light-emitting diode chips (LED chips) in one piece; and at least two electrodes disposed over the substrate and electrically connected to the LED chip set.

A light emitting diode and a manufacturing method therefore are provided. The light emitting diode includes at least: a first light emitting structure, formed on a substrate, in which a first n-GaN layer, a first active layer and a first p-GaN layer are sequentially layered; a first n-type electrode formed on one side of the upper part of the first n-GaN layer; a current diffusion layer, formed on the first light emitting structure, in which at least one hole is arranged; and a second light emitting structure in which a second p-GaN layer, which is formed in a region of a conductive layer in which at least one hole is arranged, and a second active layer and a second n-GaN layer, which are formed on the second p-GaN layer, are sequentially layered.

An optoelectronic device including a first integrated circuit that includes: a substrate, having first and second opposite surfaces; and groups of sets of light-emitting diodes resting on the first surface. The integrated circuit also includes: in the substrate, first side elements for electrically insulating portions of the substrate around each set; and for each group on the second surface, at least one first conductive contact, connected to the first terminal of the group, and one second conductive contact, connected to the second terminal of the group. The device includes a second integrated circuit containing: third and fourth opposite surfaces; and third conductive contacts, located on the third surface and electrically connected to the first and second conductive contacts. The first integrated circuit is attached onto the third surface of the second integrated circuit.

A protective covering configured for use with a mobile electronics device, including a front wall and a plurality of side walls defining a primary cavity. A back wall is disposed within the primary cavity separating the primary cavity into a protective covering electronics housing cavity and a mobile electronic device housing cavity. One or more apertures are disposed within the front wall. A light source is disposed within the protective covering electronics housing cavity, wherein at least a portion of the light source is disposed outside of the protective covering electronics housing cavity and through at least one of the one or more apertures in the front wall. A heat sink is disposed within the protective covering electronics housing cavity and in contact with the light source.

This disclosure refers to a manufacturing method of a flip-chip structure of III group semiconductor light emitting device. The manufacturing method includes steps of: growing a substrate, a buffer layer, an N type nitride semiconductor layer, an active layer and a P type nitride semiconductor layer sequentially from bottom to top to form an epitaxial structure, depositing a transparent conductive layer; defining an isolation groove with the yellow light etching process, depositing a first insulation layer structure, depositing a P type contact metal and N type contact metal, depositing a second insulation layer structure, depositing a flip-chip P type electrode and flip-chip N type electrode, then removing the photo resist by using of the stripping process to get a wafer; thinning, dicing, separating, measuring and sorting the wafer. In this disclosure, structure of the first insulation layer structure which is formed by the Prague reflective layer, the metal layer and the multilayer of oxide insulation, acts as a reflector structure and an insulation layer to replace the flip-chip reflector structure design and the first insulation layer, so that a metal protective layer can be omitted.

Disclosed is a semiconductor light emitting device including: multiple semiconductor layers including a first semiconductor layer, a second semiconductor layer, and an active layer; an electrode electrically connected with the multiple semiconductor layers; a light absorption barrier disposed about at least the electrode; and a non-conductive reflective film adapted to cover the multiple semiconductor layers, the light absorption barrier and the electrode and to reflect light from the active layer, wherein the non-conductive reflective film has an abnormal region of a lower reflectivity around the electrode due to a height difference between the light absorption barrier and the electrode, wherein a portion of the non-conductive reflective film exposed from the electrode is made longer than the abnormal region as seen in a cross-sectional view of the electrode.

A flexible display includes a plurality of pixel chips, chixels, provided on a flexible substrate. The chixels and the light emitters thereon may be shaped, sized and arranged to minimize chixel, pixel, and sub-pixel gaps and to provide a desired bend radius of the display. The flexible substrate may include light manipulators, such as filters, light converters and the like to manipulate the light emitted from light emitters of the chixels. The light manipulators may be arranged to minimize chixel gaps between adjacent chixels.