A display substrate and a display device. The display substrate includes: a plurality of pixel islands, a first opening, a second opening and a first passage region. Each pixel island includes at least one pixel, each pixel includes a plurality of first driving lines, the first passage region is provided with a plurality of first connection lines, each of the plurality of pixel islands further includes a plurality of transfer lines, and the plurality of transfer lines are arranged in different layers from the plurality of first driving lines and cross each other to form a plurality of overlapping regions; the plurality of transfer lines are electrically connected with the plurality of first driving lines through via holes located in part of the overlapping regions, and the transfer lines in two adjacent pixel islands are respectively connected with the plurality of first connection lines in the first passage region.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

A light-emitting element includes a light-emitting element core extending in a direction and including a first semiconductor layer, a second semiconductor layer disposed on the first semiconductor layer, and a device active layer disposed between the first semiconductor layer and the second semiconductor layer, a device insulating film surrounding a lateral surface of the light-emitting element core, and a reflective film disposed on an outer lateral surface of the device insulating film and surrounding at least a lateral surface of the device active layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer.

Provided in the present specification are a substrate structure having an exclusive design for allowing assembly on a substrate, at the same time, of a plurality of semiconductor light emitting devices having various colors, and a new type of semiconductor light emitting device, such that the semiconductor light emitting devices can be quickly and accurately assembled on the substrate with a concern about color mixing. Here, at least one of the plurality of semiconductor light emitting devices, according to one embodiment of the present invention, comprises a bump part located in the lateral direction of a surface to be assembled. An assembly groove in which the semiconductor light emitting device including the bump part is assembled is provided with a protrusion part facing toward the inside of the assembly groove.

According to one embodiment, a display device includes a first substrate on which a light emitting element is mounted and a second substrate that faces the first substrate. The second substrate includes a reflector plate at a position above the light emitting element and facing a light emission surface of the light emitting element.

A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.