A light module including a circuit substrate and a light emitter, the light emitter including a light source configured to generate light and including a first epitaxial layer, a second epitaxial layer, and an active layer, an insulation layer covering the light source, a first electrode electrically connected to the first epitaxial layer, a light guide configured to guide light generated from the light source, a transparent material covering the light source, and an angle controller disposed on the transparent material, in which the light guide has a guide hole filled with the transparent material, and a refractive index of the light guide is different from that of the light source.

A display apparatus is provided and includes substrate; pixels disposed on substrate; inorganic light emitting elements that are provided in pixels, respectively; electrode that is translucent and provided on one surface side of substrate and that is coupled to one of inorganic light emitting elements; transparent resin layer that is provided on one surface side of substrate and that covers electrode; light-shielding conductive layer that is provided on one surface side of substrate and that is in contact with transparent resin layer; and cover member that is translucent and provided on one surface side of substrate and that covers transparent resin layer, wherein substrate includes display region in which pixels are located, and peripheral region located outside display region, and light-shielding conductive layer is located in peripheral region.

A display device includes a pixel in a display area. The pixel includes: spaced apart first and second electrodes; a first insulating layer on the first electrode and the second electrode and between the first electrode and the second electrode and having a first etch selectivity; a first insulating pattern on the first insulating layer between the first electrode and the second electrode, and having a second etch selectivity; a light emitting element on the first insulating pattern; a second insulating pattern having the second etch selectivity and being on one area of the light emitting element such that a first end and the second end of the light emitting element are exposed; and third and fourth electrodes configured to electrically connect the first end and the second end of the light emitting element to the first and second electrodes, respectively.

A method for making a device. The method comprises forming a buffer layer on a substrate; forming a periodically doped layer on the buffer layer; forming one or more wires on the periodically doped layer, the wires being chosen from nanowires and microwires; and introducing porosity into the periodically doped layer to form a porous distributed Bragg reflector (DBR). Various devices that can be made by the method are also disclosed.

A display device includes a pixel, the pixel includes at least one light emitting element including a first end and a second end; a first electrode overlapping the at least one light emitting element and electrically connected to the first end of the at least one light emitting element; and a second electrode overlapping the at least one light emitting element and the first electrode and electrically connected to the second end of the at least one light emitting element, and the first electrode includes area electrodes divided according to a number and a position of area electrodes overlapping the at least one light emitting element.

As the pixel density of optoelectronic devices becomes higher, and the size of the optoelectronic devices becomes smaller, the problem of isolating the individual micro devices becomes more difficult. A method of fabricating an optoelectronic device, which includes an array of micro devices, comprises: forming a device layer structure including a monolithic active layer on a substrate; forming an array of first contacts on the device layer structure defining the array of micro devices; mounting the array of first contacts to a backplane comprising a driving circuit which controls the current flowing into the array of micro devices; removing the substrate; and forming an array of second contacts corresponding to the array of first contacts with a barrier between each second contact.

As the pixel density of optoelectronic devices becomes higher, and the size of the optoelectronic devices becomes smaller, the problem of isolating the individual micro devices becomes more difficult. A method of fabricating an optoelectronic device, which includes an array of micro devices, comprises: forming a device layer structure including a monolithic active layer on a substrate; forming an array of first contacts on the device layer structure defining the array of micro devices; mounting the array of first contacts to a backplane comprising a driving circuit which controls the current flowing into the array of micro devices; removing the substrate; and forming an array of second contacts corresponding to the array of first contacts with a barrier between each second contact.

A display device includes a substrate, a semiconductor layer disposed on the substrate, and including a first channel portion, a second channel portion, a connecting portion disposed between the first channel portion and the second channel portion, and electrode regions, a first insulating layer disposed on the semiconductor layer, a gate conductor disposed on the first insulating layer and including a first gate electrode overlapping the first channel portion and a second gate electrode overlapping the second channel portion, signal lines disposed on the substrate, a first electrode electrically connected to at least one of electrode regions of the semiconductor layer, an emission layer disposed on the first electrode, and a second electrode disposed on the emission layer, and the first channel portion and the second channel portion of the semiconductor layer each have a first width greater than a second width of the connecting portion.

A Light Emitting Diode (LED) array precursor is provided. The LED array precursor comprises a substrate having a substrate surface, a first LED stack, a p++ layer, a n++ layer and a second LED stack. The first LED stack is provided on a first portion of the substrate surface. The first LED stack comprises a plurality of first Group III-nitride layers defining a first semiconductor junction configured to output light having a first wavelength wherein a n-type side of the first semiconductor junction is orientated towards the substrate surface. The p++ layer is provided on the first LED stack, the p++ layer comprising a Group III-nitride. The n++ layer has a first portion covering the p++ layer of the first LED stack and a second portion covering a second portion of the substrate surface, wherein a tunnel junction is formed at an interface between the n++ layer and the p++ layer, the n++ layer comprising a Group III-nitride. The second LED stack is provided on the second portion of the n++ layer covering the second portion of the substrate surface. The second LED stack comprises a plurality of second Group III-nitride layers defining a second semiconductor junction configured to output light having a second wavelength different to the first wavelength, wherein a n-type side of the semiconductor junction is provided towards the n++ layer. A method of manufacturing a LED array precursor is also provided.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer.