Provided are a light emitting element and a display device comprising same. The light emitting element comprises: a first conductivity type semiconductor doped with a dopant having a first polarity, a second conductivity type semiconductor doped with a dopant having a second polarity opposite to the first polarity; an active layer between the first conductivity type semiconductor and the second conductivity type semiconductor; and an insulation film which surrounds at least a side surface of the active layer, wherein the insulation film includes an insulation coating film and at least one light conversion particle on at least a portion of the insulation coating film.

A light-emitting diode (LED) includes: an epitaxial structure having an upper and a lower surface, wherein the upper surface comprises a light-emitting surface; at least one insulating layer over the lower surface; and an electrode pad layer over the at least one insulating layer; wherein: the electrode pad layer comprises a P electrode region and an N electrode region; and the at least one insulating layer is configured to adjust a distribution of the P and N electrode regions over the electrode pad layer.

An LED lighting apparatus may comprise a white light emitting module including a first white LED package emitting first white light corresponding to a quadrangular region defined by (0.3100, 0.3203), (0.3082, 0.3301), (0.3168, 0.3388) and (0.3179, 0.3282) in the CIE 1931 chromaticity diagram, a second white LED package emitting second white light corresponding to a quadrangular region defined by (0.4475, 0.3994), (0.4571, 0.4173), (0.4695, 0.4207) and (0.4589, 0.4021) in the CIE 1931 chromaticity diagram, a green LED package emitting green light having a peak wavelength of 520 nm to 545 nm, and a driving controller controlling levels of luminous flux of the first white light and the second white light to select a color temperature of desired white light and controlling a luminous flux of the green LED package so as to reduce a difference between color coordinates corresponding to the selected color temperature of the white light, and a black body locus.

A semiconductor light emitting device includes first and second light emitting bodies, a first electrode, a second electrode and a first interconnection. The first and second light emitting bodies are disposed on a conductive substrate, and each includes first and second semiconductor layers and a light emitting layer therebetween. The first electrode is provided between the first light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer and the conductive substrate. The second electrode is provided between the second light emitting body and the conductive substrate, and electrically connected to a first semiconductor layer. The first interconnection electrically connects the second semiconductor layer of the first light emitting body and the second electrode. The first interconnection includes a first portion extending over the first and second light emitting bodies and a second portion extending into the second light emitting body.

High-voltage solid-state transducer (SST) devices and associated systems and methods are disclosed herein. An SST device in accordance with a particular embodiment of the present technology includes a carrier substrate, a first terminal, a second terminal and a plurality of SST dies connected in series between the first and second terminals. The individual SST dies can include a transducer structure having a p-n junction, a first contact and a second contact. The transducer structure forms a boundary between a first region and a second region with the carrier substrate being in the first region. The first and second terminals can be configured to receive an output voltage and each SST die can have a forward junction voltage less than the output voltage.

The device according to the invention comprises a nanostructured LED with a first group of nanowires protruding from a first area of a substrate and a contacting means in a second area of the substrate. Each nanowire of the first group of nanowires comprises a p-i-n-junction and a top portion of each nanowire or at least one selection of nanowires is covered with a light-reflecting contact layer. The contacting means of the second area is in electrical contact with the bottom of the nanowires, the light-reflecting contact layer being in electrical contact with the contacting means of the second area via the p-i-n-junction. Thus when a voltage is applied between the contacting means of the second area and the light-reflecting contact layer, light is generated within the nanowire. On top of the light-reflecting contact layer, a first group of contact pads for flip-chip bonding can be provided, distributed and separated to equalize the voltage across the layer to reduce the average serial resistance.

LED lamp systems having improved light quality are disclosed. The lamps emit more than 500 lm and more than 2% of the power in the spectral power distribution is emitted within a wavelength range from about 390 nm to about 430 nm.

A backlight unit includes a backlight module with a printed circuit board including blocks and MJT LEDs disposed on the blocks, respectively and a backlight control module generating a signal for drive control of each of the blocks, wherein each of the blocks comprises at least one MJT LED, and the backlight control module includes a drive controller for On/Off control and dimming control of each of the blocks.

A light emitting device includes a base, a first light emitting unit, a second light emitting unit, a light conversion layer and a lens. The base has a first side slot, a second side slot, and a central slot separated from the first side slot and the second side slot, and the first side slot is formed in a separated recess configuration with a long axis and a short axis. The first light emitting unit is installed in the central slot, and the second light emitting unit is installed in the first side slot. The light conversion layer is covered onto the first light emitting unit or the second light emitting unit, and the lens covers the light conversion layer, the central slot, the first side slot, and the second side slot. The first slot and the lens have first similar contour lines in a top view.

The present invention relates to an array-type double-side light-emitting device, a manufacturing method thereof and a double-side display device. The array-type double-side light-emitting device comprises: a first protective layer, a first fluorescent layer or quantum dot layer, an array of first transparent conductive layers, a first anisotropic conductive adhesive layer, an array of light-emitting wafers, a second anisotropic conductive adhesive layer, an array of second transparent conductive layers, a second fluorescent layer or quantum dot layer and a second protective layer, which are attached together sequentially.