Various embodiments of SST dies and solid state lighting (SSL) devices with SST dies, assemblies, and methods of manufacturing are described herein. In one embodiment, a SST die includes a substrate material, a first semiconductor material and a second semiconductor material on the substrate material, an active region between the first semiconductor material and the second semiconductor material, and a support structure defined by the substrate material. In some embodiments, the support structure has an opening that is vertically aligned with the active region.

Provided are a full-color LED structure and a preparation method of a full-color LED structure. The full-color LED structure includes a first substrate, first-color light-emitting units, second-color light-emitting units, and third-color light-emitting units. The first-color light-emitting units and the second-color light-emitting units are disposed on a side of the first substrate, disposed in the same layer, and simultaneously prepared. The third-color light-emitting units are disposed on the side of the first-color light-emitting units and the second-color light-emitting units facing away from the first substrate, where a vertical projection of a third-color light-emitting unit on the first substrate does not overlap a vertical projection of a first-color light-emitting unit on the first substrate or a vertical projection of a second-color light-emitting unit on the first substrate.

A method of manufacturing a display device includes: providing a carrier module including a carrier wafer and light emitting elements; disposing the carrier module on a transparent electrode assembly; inspecting the light emitting elements; and transferring the light emitting elements onto a pixel circuit layer after the inspecting the light emitting elements.

Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.

A method for manufacturing an image display device includes: providing a second substrate that includes a first substrate, and a semiconductor layer grown on the first substrate, the semiconductor layer including a light-emitting layer; providing a third substrate including: a circuit including a circuit element formed on a light-transmitting substrate, a first insulating film covering the circuit, and a conductive layer including a light-reflective part formed on the first insulating film; bonding the semiconductor layer to the third substrate; forming a light-emitting element from the semiconductor layer; forming a second insulating film covering the conductive layer, the light-emitting element, and the first insulating film; forming a via extending through the first and second insulating films; and electrically connecting the light-emitting element and the circuit element by the via.

A display device includes a substrate having a pixel electrode, a light emitting element disposed on the pixel electrode and including a first semiconductor layer, an active layer, and a second semiconductor layer, a step coverage prevention layer surrounding the light emitting element in a plan view, a common electrode disposed on the light emitting element and the step coverage prevention layer, and an oxidation prevention layer disposed on a portion of the common electrode that does not overlap the light emitting element in a thickness direction. The common electrode includes a first portion disposed on the light emitting element and a second portion disposed between the oxidation prevention layer and the step coverage prevention layer, and a material forming the first portion is an oxide of a material forming the second portion.

A display device includes a substrate, on which a display area and a non-display area are defined, pixels disposed on the substrate, where the pixels include pixel electrodes disposed in emission areas positioned in the display area, light emitting layers disposed on the pixel electrodes, and a common electrode disposed on the light emitting layers, an insulating layer disposed on the substrate and positioned in a non-emission area between the emission areas of the pixels and the non-display area, and a conductive pattern disposed on the insulating layer to be separated from the pixel electrodes of the pixels, where a first voltage is applied to the conductive pattern. The insulating layer includes a lower insulating layer positioned between the pixel electrodes in the display area, and an upper insulating layer disposed on the lower insulating layer and having a greater area than an upper surface of the lower insulating layer.

A display device including an internal area and a peripheral area surrounding at least a portion of the internal area includes a pixel-circuit layer disposed on a base layer and including lower lines, at least a portion of which form a pixel circuit, and sub-pixels disposed on the pixel-circuit layer and including a light emitting element electrically connected to the pixel circuit. The internal area includes a pixel area on which the sub-pixels are disposed, and an outer-dam area formed at a periphery of the pixel area. In the outer-dam area, at least another portion of the lower lines are stacked in a thickness direction of the base layer to form a protruding structure.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.