A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

A light emitting device including a substrate having a first region and a second region, a light emitting stack including vertically stacked semiconductor layers disposed on the first region of the substrate, at least one pillar disposed on the second region of the substrate and laterally spaced apart from the light emitting stack, and at least one electrode extending from the first region to the second region of the substrate and electrically connecting the light emitting stack to the at least one pillar, in which the at least one pillar is disposed on the at least one electrode, respectively.

A display device includes a first substrate having a first surface and a plurality of LED elements mounted on the first surface of the first substrate. Each of the plurality of LED elements includes a main body portion having a second surface facing the first surface of the first substrate and a third surface on a side opposite to the second surface, an anode electrode and a cathode electrode provided on the second surface of the main body portion, and an organic film bonded to the third surface of the main body portion. The organic film has a fourth surface facing and bonded to the third surface and a fifth surface on a side opposite to the fourth surface. The fifth surface of the organic film has a plurality of depressions.

A single light emitting diode (LED) structure includes an array of spaced discrete light emitting zones separated by isolation areas. Each emitting zone includes an epitaxial structure configured to emit an emitting light having a particular wavelength over an effective emission area. In addition, the effective emission area for each emitting zone can be geometrically defined and electrically configured to provide a desired light intensity. For example, each effective emission area can have a selected size and spacing depending on the application and light intensity requirements. Each emitting zone also includes a wavelength conversion member on its effective emission area configured to convert an emitting wavelength of the emitting light to a different color. The single (LED) structure can include multiple colors at different zones to produce a desired spectra or design. The single (LED) structure can also include a substrate for supporting the array, and the substrate can include one or more light shielding holes located between each emitting zone.

Solid state transducer devices with independently controlled regions, and associated systems and methods are disclosed. A solid state transducer device in accordance with a particular embodiment includes a transducer structure having a first semiconductor material, a second semiconductor material and an active region between the first and second semiconductor materials, the active region including a continuous portion having a first region and a second region. A first contact is electrically connected to the first semiconductor material to direct a first electrical input to the first region along a first path, and a second contact electrically spaced apart from the first contact and connected to the first semiconductor material to direct a second electrical input to the second region along a second path different than the first path. A third electrical contact is electrically connected to the second semiconductor material.

An inorganic light-emitting diode substrate includes: a base, a plurality of epitaxial layer structures disposed on the base, a passivation layer, and a plurality of second electrodes disposed on a side of the passivation layer away from the base. The base includes a base substrate and a plurality of first electrodes disposed on the base substrate. The plurality of epitaxial layer structures are spaced apart, and each first electrode is coupled to one epitaxial layer structure. The passivation layer is made of photoresist. The passivation layer covers surfaces, away from the base, of the plurality of epitaxial layer structures, and fills gaps between the plurality of epitaxial layer structures. The passivation layer has a plurality of via holes, and each second electrode is coupled to one epitaxial layer structure through at least one via hole.

A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.

Provided are a full-color LED structure and a preparation method of a full-color LED structure. The full-color LED structure includes a first substrate, first-color light-emitting units, second-color light-emitting units, and third-color light-emitting units. The first-color light-emitting units and the second-color light-emitting units are disposed on a side of the first substrate, disposed in the same layer, and simultaneously prepared. The third-color light-emitting units are disposed on the side of the first-color light-emitting units and the second-color light-emitting units facing away from the first substrate, where a vertical projection of a third-color light-emitting unit on the first substrate does not overlap a vertical projection of a first-color light-emitting unit on the first substrate or a vertical projection of a second-color light-emitting unit on the first substrate.

Solid state transducer devices having integrated electrostatic discharge protection and associated systems and methods are disclosed herein. In one embodiment, a solid state transducer device includes a solid state emitter, and an electrostatic discharge device carried by the solid state emitter. In some embodiments, the electrostatic discharge device and the solid state emitter share a common first contact and a common second contact. In further embodiments, the solid state lighting device and the electrostatic discharge device share a common epitaxial substrate. In still further embodiments, the electrostatic discharge device is positioned between the solid state lighting device and a support substrate.

A light-emitting component includes a light-emitting unit and an electrically insulating layer. The light-emitting unit includes a first semiconductor layer, an active layer, and a second semiconductor layer, which are stacked on one another along a stacking direction in such order. The second semiconductor has a lower surface distal from the active layer. The electrically insulating layer is disposed to cover a first portion and to expose a second portion of the lower surface of the second semiconductor layer. A fluorine-containing region is formed in the second semiconductor layer. Methods for making the light-emitting component are also disclosed.