A light emitting apparatus including a substrate, a plurality of light emitting diode devices disposed on the substrate, a light non-transmitting layer disposed on the substrate and having at least one of open regions, and a first conductive bonding layer disposed between the plurality of lighting emitting diode devices and the substrate and electrically contacting the plurality of light emitting diode devices, in which an upper surface of the first conductive bonding layer is placed above the light non-transmitting layer.

An image display device includes a drive circuit substrate, micro LED elements, and a wavelength conversion layer that converts excitation light emitted from the micro LED elements and that emits converted long-wavelength light to a side opposite to the drive circuit substrate, the micro LED elements and the wavelength conversion layer being sequentially stacked on the drive circuit substrate. The micro LED elements include a first multilayer film that reflects the long-wavelength light converted by the wavelength conversion layer.

A method of fabricating a display device includes forming a transistor above a substrate, and a pixel electrode at a same layer as one of electrodes of the transistor, forming an adhesive layer on the pixel electrode, placing a light-emitting element on the adhesive layer, forming an insulting layer to cover the transistor, the pixel electrode, and the light-emitting element, and forming a first bridge pattern electrically connecting the transistor to a first end of the light-emitting element, and a second bridge pattern electrically connected to a second end of the light-emitting element, wherein the light-emitting element is primarily fixed by the adhesive layer, and wherein the light-emitting element is secondarily fixed by the insulating layer.

A display device and a method of manufacturing the display device are provided. The display device includes a display substrate including a driving circuit; an array layer provided on the display substrate and including a plurality of grooves; a micro-semiconductor chip provided in a groove of the plurality of grooves, the micro-semiconductor chip including: an n-type semiconductor layer; an active layer provided on the n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; and a first electrode provided on the p-type semiconductor layer; and a second electrode connected to the n-type semiconductor layer from a lower surface of the display substrate; a first wiring connected to the first electrode; and a second wiring connected to the second electrode.

A method of manufacturing a display device includes forming a pad part on an upper surface of a substrate, forming a lower electrode on a lower surface of the substrate, connecting the lower electrode and a flexible circuit board to each other, disposing, on a side surface of the substrate, a conductive material for electrically connecting the pad part and the lower electrode to each other, and forming a side surface connection line by an electromagnetic wave output device irradiating an electromagnetic wave having a wavelength onto the conductive material on the side surface of the substrate. In the display device and the manufacturing method thereof in accordance with the disclosure, a time necessary to form a side surface connection line is shortened.

A method for manufacturing a light emitting device can include providing a substrate, forming a first active layer including a first electrical polarity, forming a light emitting region, forming a second active layer including a second electrical polarity, and forming a first electrical contact layer. The light emitting region can emit light with a target wavelength between 200 nm and 300 nm. A plurality of mesas can be formed, where each mesa can include a portion of the first active layer, the light emitting region, the second active layer, and the first electrical contact layer. A mesa width of each mesa is smaller than twice a current spreading length of the light emitting device. In some cases, the current spreading length is from 400 nm to 5 microns. In some cases, a distance separating the mesas from 1 micron to 10 microns.

Light emitting assemblies comprise a plurality of Light Emitting Diode (LED) dies arranged and attached to common substrate to form an LED array having a desired optimum packing density. The LED dies are wired to one another and are attached to landing pads on the substrate for receiving power from an external electrical source via an interconnect device. The assembly comprises a lens structure, wherein each LED die comprises an optical lens disposed thereover that is configured to promote optimal light transmission. Each optical lens has a diameter that is between about 1.5 to 3 times the size of a respective LED die, and is shaped in the form of a hemisphere. Fillet segments are integral with and interposed between the adjacent optical lenses, and provide sufficient space between adjacent optical lenses so that the diameters of adjacent optical lenses do not intersect with one another.

A display device includes a substrate provided on a driving circuit, an adhesive layer covering the substrate, a first LED chip provided on the adhesive layer, a pixel circuit provided on the adhesive layer, separated from the first LED chip, a light shielding layer provided on the adhesive layer, and a first opening of the same shape as that of the first LED chip when viewed in a plan view and a second opening of the same shape as that of the pixel circuit when viewed in a plan view, an insulating layer covering the driving circuit and the pixel circuit, and a first wiring provided on the insulating layer, connected to the first LED chip and the pixel circuit, wherein the first wiring overlaps the light shielding layer.

Direct-bonded LED arrays and applications are provided. An example process fabricates a LED structure that includes coplanar electrical contacts for p-type and n-type semiconductors of the LED structure on a flat bonding interface surface of the LED structure. The coplanar electrical contacts of the flat bonding interface surface are direct-bonded to electrical contacts of a driver circuit for the LED structure. In a wafer-level process, micro-LED structures are fabricated on a first wafer, including coplanar electrical contacts for p-type and n-type semiconductors of the LED structures on the flat bonding interface surfaces of the wafer. At least the coplanar electrical contacts of the flat bonding interface are direct-bonded to electrical contacts of CMOS driver circuits on a second wafer. The process provides a transparent and flexible micro-LED array display, with each micro-LED structure having an illumination area approximately the size of a pixel or a smallest controllable element of an image represented on a high-resolution video display.

Discussed is a display device, including a substrate, a wiring electrode disposed on the substrate, a plurality of semiconductor light-emitting elements electrically connected to the wiring electrode, an anisotropic conductive layer disposed between the plurality of semiconductor light-emitting elements and formed of a mixture of conductive particles and an insulating material; and a buffer portion disposed on a lower surface of a semiconductor light-emitting element of the plurality of semiconductor light-emitting elements so as to allow the wiring electrode and the semiconductor light-emitting element to be spaced apart by a predetermined distance, and provided with at least one hole, wherein the mixture of the conductive particles and the insulating material is disposed inside the at least one hole, and the wiring electrode is electrically connected to the semiconductor light-emitting element through conductive particles disposed inside the at least one hole.