Patent classifications
H10H20/831
Display device
Some embodiments of the present disclosure provide a display device including a base layer, a first electrode and a second electrode extending along a first direction on the base layer, and spaced apart from each other in a second direction crossing the first direction, and light emitting elements at least partially overlapping the first electrode and at least partially overlapping the second electrode, wherein at least one of the first electrode and the second electrode includes a concavo-convex portion in which at least a portion of one of the light emitting elements overlaps with respect to a third direction that is perpendicular to the first direction and to the second direction.
Display device
Some embodiments of the present disclosure provide a display device including a base layer, a first electrode and a second electrode extending along a first direction on the base layer, and spaced apart from each other in a second direction crossing the first direction, and light emitting elements at least partially overlapping the first electrode and at least partially overlapping the second electrode, wherein at least one of the first electrode and the second electrode includes a concavo-convex portion in which at least a portion of one of the light emitting elements overlaps with respect to a third direction that is perpendicular to the first direction and to the second direction.
Light emitting element
A light emitting element includes: a semiconductor structure including: a substrate, an n-side nitride semiconductor layer located on the substrate, and a p-side nitride semiconductor layer located on the n-side nitride semiconductor layer, wherein a p-side nitride semiconductor side of the semiconductor structure is a light extraction face side, and an n-side nitride semiconductor side of the semiconductor structure is a mounting face side; a first protective layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the peripheral portion of the p-side nitride semiconductor layer; and a current diffusion layer located on and in direct contact with an upper face of the p-side nitride semiconductor layer in a region corresponding to the area inside of the peripheral portion. The current diffusion layer does not overlap the first protective layer in a top view.
Display device having banks with at least two areas having different widths
A display deice includes a pair of first color sub-pixels arranged in a display area in a first direction, each of the pair of first color sub-pixels including at least one first color light emitting element, and a bank enclosing the pair of first color sub-pixels. The bank includes at least two areas having different widths in an area corresponding to each of the pair of first color sub-pixels.
Display device having banks with at least two areas having different widths
A display deice includes a pair of first color sub-pixels arranged in a display area in a first direction, each of the pair of first color sub-pixels including at least one first color light emitting element, and a bank enclosing the pair of first color sub-pixels. The bank includes at least two areas having different widths in an area corresponding to each of the pair of first color sub-pixels.
Light-emitting device
A light-emitting device includes a first semiconductor layer; a semiconductor pillar formed on the first semiconductor layer, including a second semiconductor layer and an active layer, wherein the semiconductor pillar comprises an outmost periphery; a first contact layer formed on the first semiconductor layer and including a first contact portion and a first extending portion, wherein the first extending portion continuously surrounds an entirety of the outmost periphery of the semiconductor pillar and the first contact portion; a second contact layer formed on the second semiconductor layer; a first insulating layer including multiple first openings exposing the first contact layer and multiple second openings exposing the second contact layer; a first electrode contact layer connected to the first contact portion through the multiple first openings and covering all of the first contact layer; a second electrode contact layer connected to the second contact layer through the multiple second openings.
Display device including electric field forming auxiliary electrode and method of manufacturing the same
According to an embodiment of the disclosure, a display device includes a first electrode and a second electrode that are disposed on a substrate and spaced apart from each other, a light emitting element disposed between the first electrode and the second electrode, and an auxiliary electrode disposed on the substrate and overlapping the light emitting element such that the auxiliary electrode forms an electric field in an area where the light emitting element is disposed.
Flip-chip light-emitting diode
A flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. The epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. Each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. A surface of the first semiconductor layer exposed by the first holes has a total area smaller than a total area of a surface of the first semiconductor layer exposed by the second holes.
Flip-chip light-emitting diode
A flip-chip light-emitting diode includes an epitaxial structure including a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on one another in such order. The epitaxial structure is formed with first holes and second holes respectively at a first region and a second region that are independent from each other. Each of the first and second holes extends through the second semiconductor layer and the active layer, and partially exposes the first semiconductor layer. A surface of the first semiconductor layer exposed by the first holes has a total area smaller than a total area of a surface of the first semiconductor layer exposed by the second holes.
Display panel and method for making the same
A display panel includes a substrate, a plurality of conductive components on a surface of the substrate, a plurality of light-emitting diodes. The conductive components are on a surface of the substrate and spaced apart from each other. Each conductive component includes a first conductive part and a second conductive part. The second conductive part is electrically connected to the first conductive part. A projection of the second conductive part on the surface at least partially overlaps a projection of the first conductive part on the surface. Each light-emitting diode includes a binding electrode, and the binding electrode is electrically connected to the second conductive part. The first conductive part is made of metal; the second conductive part is made of a transparent conductive oxide. The binding electrode is made of metal. A eutectic material is formed between the second conductive part and the binding electrode.