Patent classifications
H10H20/831
Light emitting element and display device comprising same
Provided are a light emitting element and a display device comprising same. The light emitting element comprises: a first conductivity type semiconductor doped with a dopant having a first polarity, a second conductivity type semiconductor doped with a dopant having a second polarity opposite to the first polarity; an active layer between the first conductivity type semiconductor and the second conductivity type semiconductor; and an insulation film which surrounds at least a side surface of the active layer, wherein the insulation film includes an insulation coating film and at least one light conversion particle on at least a portion of the insulation coating film.
Light emitting element and display device comprising same
Provided are a light emitting element and a display device comprising same. The light emitting element comprises: a first conductivity type semiconductor doped with a dopant having a first polarity, a second conductivity type semiconductor doped with a dopant having a second polarity opposite to the first polarity; an active layer between the first conductivity type semiconductor and the second conductivity type semiconductor; and an insulation film which surrounds at least a side surface of the active layer, wherein the insulation film includes an insulation coating film and at least one light conversion particle on at least a portion of the insulation coating film.
Display device
Provided is a display device comprising a substrate, a first active layer on the substrate and extending along a first direction, and a first conductive layer between the substrate and the first active layer, and including a first conductive pattern and a second conductive pattern spaced apart from each other in the first direction, wherein the first active layer conformally reflects a step difference of the first conductive layer, and includes a branched structure in a space between the first conductive pattern and the second conductive pattern.
Light emitting diode display device and method of fabricating light emitting diode display device
The present disclosure relates to an LED display device, and more particularly, to an LED display device including a repair structure for a deteriorated pixel. In the present disclosure, a subLED electrically connected to first and second connecting electrodes for applying a voltage to a LED is disposed on a deteriorated LED. Thus, deterioration of a display quality due to a deteriorated pixel is prevented. Since it is not required to remove a deteriorated LED, a fabrication cost is reduced and a process efficiency is improved.
Optoelectronic device and method for manufacturing the same
An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.
Optoelectronic device and method for manufacturing the same
An optoelectronic device includes a first semiconductor layer, a second semiconductor layer and an active layer between the first semiconductor layer and the second semiconductor layer; a first insulating layer on the second semiconductor layer and including a plurality of first openings exposing the first semiconductor layer, wherein the first openings include a first group and a second group; a third electrode on the first insulating layer and including a first extended portion and a second extended portion, wherein the first extended portion and the second extended portion are respectively electrically connected to the first semiconductor layer through the first group of the first openings and the second group of the first openings, and wherein the number of the first group of the first openings is different from the number of the second group of the first openings; and a plurality of fourth electrodes on the second insulating layer and electrically connected to the second semiconductor layer, wherein in a top view of the optoelectronic device, the first extended portion is located between the fourth electrodes.
Display screen and displaying device having the same
A display screen allowing higher pixel density and thus better screen resolution by virtue of the structures connecting to LED chip light sources includes a substrate, a number of pad structures, the LED chips, and a number of carrier boards. Each pad structure includes a positive electrode pad and three negative electrode pads. Each LED chip package includes a red light chip, a green light chip, and a blue light chip arranged on the three negative electrode pads. Each carrier board includes a positive electrode connection terminal and a negative electrode connection terminal, the positive electrode connection terminal is electrically connected to the positive electrode pad, the negative electrode connection terminal is electrically connected to one red light chip, one green light chip, or one blue light chip. The disclosure also provides a displaying device having the display screen.
Display screen and displaying device having the same
A display screen allowing higher pixel density and thus better screen resolution by virtue of the structures connecting to LED chip light sources includes a substrate, a number of pad structures, the LED chips, and a number of carrier boards. Each pad structure includes a positive electrode pad and three negative electrode pads. Each LED chip package includes a red light chip, a green light chip, and a blue light chip arranged on the three negative electrode pads. Each carrier board includes a positive electrode connection terminal and a negative electrode connection terminal, the positive electrode connection terminal is electrically connected to the positive electrode pad, the negative electrode connection terminal is electrically connected to one red light chip, one green light chip, or one blue light chip. The disclosure also provides a displaying device having the display screen.
LIGHT EMITTING DEVICE AND ADAPTIVE DRIVING BEAM HEADLAMP SYSTEM
A light emitting device includes a substrate, a plurality of first wiring members, a plurality of second wiring members and a plurality of light emitting elements. The first wiring members extend in a first direction. The second wiring members extend in a second direction. Each of the second wiring members is segmented into a plurality of second wiring portions. The light emitting elements are disposed along the second direction. A first electrode of the light emitting element is connected to a corresponding one of the first wiring members. A second electrode of the light emitting element has a first connection part and a second connection part that is linked to the first connection part. The first connection part and the second connection part are connected to a corresponding one of the second wiring members and bridge at least two of the segmented second wiring portions in the second direction.
SEMICONDUCTOR LIGHT EMITTING DEVICE
There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.