Disclosed herein are a light emitting diode including a plurality of protrusions including zinc oxide and a method for manufacturing the same. According to an exemplary embodiment of the present disclosure, the light emitting diode includes: a substrate; a nitride light emitting structure disposed on the substrate; and a transparent electrode layer disposed on the nitride light emitting structure, wherein the transparent electrode layer includes a plurality of protrusions, the plurality of protrusions each have a lower portion and an upper portion, and a side of the lower portion and a side of the upper portion have different gradients.

A light emitting device package can include a sub-mount having a first surface, a second surface, a bottom surface and a cavity; a first layer on the first surface; a second layer on the second surface; a third layer on the bottom surface; a light emitting device on the first layer and including a supporting layer including an anti-diffusion layer, a first electrode on the supporting layer, a semiconductor light emitting structure electrically connected to the first electrode, and a second electrode electrically connected to the semiconductor light emitting structure, in which the first and second electrodes electrically connect to the first layer and the second layer, respectively, and the semiconductor light emitting structure includes a light extraction structure; an ESD property improving diode on the second surface, electrically connected to the second layer and arranged a distance apart from the light emitting device, and a lens on the sub-mount.

A light-emitting element, comprises a light-emitting stack comprising an active layer; a window layer on the light-emitting stack, wherein the window layer has a surface opposite to the light-emitting stack; and an insulative layer on the surface, wherein the surface comprises a cavity and the insulative layer substantially conformally covering the cavity, and wherein the insulative layer has a first refractive index equal to or smaller than 1.4.

By using a light emitting device including an insulating substrate and a light emitting unit formed on the insulating substrate, the light emitting unit including: a plurality of linear wiring patterns disposed on the insulating substrate in parallel with one another, a plurality of light emitting elements that are mounted between the wiring patterns while being electrically connected to the wiring patterns, and a sealing member for sealing the light emitting elements, as well as a method for manufacturing thereof, it becomes possible to provide a light emitting device that achieves sufficient electrical insulation and has simple manufacturing processes so that it can be manufactured at a low cost, and a method for manufacturing the same.

Disclosed is a light emitting diode (LED) having improved light extraction efficiency. The LED includes a light emitting structure positioned on a substrate and having a first semiconductor layer, an active layer and a second semiconductor layer. A first electrode pad is electrically connected to the first semiconductor layer. A second electrode pad is positioned on the substrate. An insulating reflective layer covers a portion of the light emitting structure, and is positioned under the second electrode pad, so that the second electrode pad is spaced apart from the light emitting structure. At least one upper extension is connected to the second electrode pad to be electrically connected to the second semiconductor layer. Further, a pattern of light extraction elements is positioned on the second semiconductor layer.

A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): $\begin{array}{cc}\frac{3}{4n}+0.30\left(\frac{}{4n}\right)T\frac{3}{4n}+0.45\left(\frac{}{4n}\right)& \left(1\right)\end{array}$
wherein is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.

A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements.

A method of forming a rough surface includes: providing an article having a top surface, forming a plurality of agglomerated grains on the top surface by a deposition process, and patterning the top surface to form a rough surface by using the plurality of agglomerated grains as a mask.

An LED die includes a base, and an N-typed semiconductor layer, an active layer and a P-typed semiconductor layer formed on the base that order. The LED die also includes an N-electrode and a P-electrode. The N-electrode is arranged on the N-typed semiconductor layer and electrically connected therewith. The P-electrode is arranged on the P-typed semiconductor layer and electrically connected therewith. The LED die further includes a barrier layer arranged between the P-typed semiconductor layer and the P-electrode. The barrier layer includes at least two materials of Cr, Ni and Ti. The at least two materials of Cr, Ni and Ti are stacked together to form the barrier layer.