According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an insulating layer. The semiconductor layer includes a first surface, a second surface, and a light emitting layer. The first metal pillar is electrically connected to the second surface. The first metal pillar includes first and second metal layers. The first metal layer is provided between the second surface and at least a part of the second metal layer. The second metal pillar is arranged side by side with the first metal pillar, and electrically connected to the second surface. The second metal pillar includes third and fourth metal layers. The third metal layer is provided between the second surface and at least a part of the fourth metal layer. The insulating layer is provided between the first and second metal pillars.

A light-emitting structure comprises a semiconductor light-emitting element which includes a first connection point and a second connection point. The light-emitting structure further includes a first electrode electrically connected to the first connection point, and a second electrode electrically connected the second connection point. The first electrode and the second electrode can form a concave on which the semiconductor light-emitting element is located.

The present disclosure provides a light-emitting device, comprising: a light-emitting stack comprising an active layer, wherein the active layer is configured to emit light; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment; and a light-absorbing layer having a first portion surrounding the first semiconductor layer in a top view.

A light emitting device includes: a ceramic substrate; a plurality of LED chips; a printed resistor(s) connected in parallel with the plurality of LED chips; a dam resin made of a resin having a low optical transmittance; a fluorescent-material-containing resin layer; and an anode-side electrode and a cathode-side electrode, (a) which are provided on a primary surface of the ceramic substrate so as to face each other along a first direction on the primary surface and (b) which are disposed below at least one of the dam resin and the fluorescent-material-containing resin layer. With the configuration in which a plurality of LEDs, which are connected in a series-parallel connection, are provided on a substrate, it is possible to provide a light emitting device which can achieve restraining of luminance unevenness and an improvement in luminous efficiency.

A nitride semiconductor light emitting element 1 includes a second conductivity type nitride semiconductor layer which is formed above a first conductivity type nitride semiconductor layer, a first electrode 17a which is formed on a first region of the second conductivity type nitride semiconductor layer with a first current non-injection layer 13a in between, a first current diffusing layer 14a which is formed between the first current non-injection layer 13a and the first electrode 17a, a second electrode 17b which is formed on a second region of the second conductivity type nitride semiconductor layer with a second current non-injection layer 13b in between, a second current diffusing layer 14b which is formed on the second region and on the second current non-injection layer 13b, and an extending portion 17c which extends from the first electrode 17a and reaches the exposed first conductivity type nitride semiconductor layer.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

A light emitting diode includes a substrate including a concave-convex pattern having concave portions and convex portions, a first light emitting unit disposed on the substrate, a second light emitting unit disposed on the substrate, a first wire connecting the first light emitting unit to the second light emitting unit over the concave-convex pattern, and an insulation layer disposed between the concave-convex pattern and the wire. The insulation layer has a shape corresponding to the concave-convex pattern.

A light-emitting apparatus includes a light-emitting, a first lead, a second lead, and a resin molded body configured to support the first lead and the second lead. The main surfaces of the first and second leads includes first and second coverage areas covered by the resin molded body and first and second exposure regions exposed from the resin molded body at a window portion of the resin molded body, respectively. First and second metal layers are provided to cover main surfaces of the first and second leads at first and second exposure regions, respectively.

An LED wafer includes LED dies on an LED substrate. The LED wafer and a carrier wafer are joined. The LED wafer that is joined to the carrier wafer is shaped. Wavelength conversion material is applied to the LED wafer that is shaped. Singulation is performed to provide LED dies that are joined to a carrier die. The singulated devices may be mounted in an LED fixture to provide high light output per unit area.

Flip chip LEDs include a transparent substrate or carrier having an active material attached thereto and having a number of electrodes disposed along a common surface of the active material. The substrate may include a number of surface features disposed along a first surface adjacent the active material for improving light extraction from the active material, and includes a number of surface features along a second surface opposite the first surface for minimizing internal reflection of light through the substrate, thereby improving light extraction from the transparent substrate. The surface features on both surfaces may be arranged having a random or ordered orientation relative to one another. A plurality of such flip chip LEDs may be physically packaged together in a manner providing electrical connection with the same for a lighting end-use application.