A light emitting module is disclosed. The light emitting module includes: a light transmissive layer transmitting light; and a film disposed on at least a surface of the light transmissive layer, an electrode layer disposed on the film; and a plurality of light emitting devices disposed on the film and electrically connected to the electrode layer, where in the electrode layer cover 50% or less of an extent of the base film.

A device includes: an active layer provided in a first comb tooth region on an n-type semiconductor layer; a p-type semiconductor layer provided on the active layer; an n-side contact electrode provided in a second comb tooth region on the n-type semiconductor layer; a p-side contact electrode provided in a third comb tooth region on the p-type semiconductor layer; a protective layer having a p-side pad opening provided in a fourth comb tooth region on the p-side contact electrode, having an n-side pad opening provided in a fifth comb tooth region on the n-side contact electrode, and made of a dielectric material; a p-side pad electrode connected to the p-side contact electrode in the p-side pad opening; and an n-side pad electrode connected to the n-side contact electrode in the n-side pad opening.

A display device comprises electrodes spaced apart from one another in a first direction and in a second direction intersecting the first direction, each of the electrodes having a shape extending in the second direction, a first insulating layer disposed on the electrodes, light-emitting elements disposed on the first insulating layer, each of the light-emitting elements including ends disposed on the electrodes spaced apart from one another in the first direction, and a second insulating layer at least partially disposed on the light-emitting elements. The second insulating layer comprises extended portions extending in the second direction, and at least one pattern portion connected to the extended portions. The at least one pattern portion includes a part having a width greater than a width of each of the extended portions in the first direction.

A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer and a second semiconductor layer; a first reflective layer formed on the first semiconductor layer and including a plurality of vias; a plurality of contact structures respectively filled in the vias and electrically connected to the first semiconductor layer; a second reflective layer including metal material formed on the first reflective layer and contacting the contact structures; a plurality of conductive vias surrounded by the semiconductor stack; a connecting layer formed in the conductive vias and electrically connected to the second semiconductor layer; a first pad portion electrically connected to the second semiconductor layer; and a second pad portion electrically connected to the first semiconductor layer, wherein a shortest distance between two of the conductive vias is larger than a shortest distance between the first pad portion and the second pad portion.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A solid-state device includes a substrate with a stack of constituent thin-film layers that define an arrangement of electrodes and intervening layers. The constituent layers can conform to or follow a non-planar surface of the substrate, thereby providing a 3-D non-planar geometry to the stack. Fabrication employs a common shadow mask moved between lateral positions offset from each other to sequentially form at least some of the layers in the stack, whereby layers with a similar function (e.g., anode, cathode, etc.) can be electrically connected together at respective edge regions. Wiring layers can be coupled to the edge regions for making electrical connection to the respective subset of layers, thereby simplifying the fabrication process. By appropriate selection and deposition of the constituent layers, the multi-layer device can be configured as an energy storage device, an electro-optic device, a sensing device, or any other solid-state device.

A method of fabricating an LED light plate, an LED light plate, and a display device are disclosed. The method includes: disposing a functional layer on each LED chip to form multiple chips to be transferred; placing the chips into a receiving tank filled with a suspension; defining a plurality of grooves matching the shape of the functional layer in the transport substrate; placing the transport substrate into the suspension so that a first electrode in each receiving tank faces each second electrode in the respective groove and that each chip is located between the first electrode and the respective second electrode; energizing the first electrode and each second electrode, so that each chip is absorbed by the transporting substrate, and each functional layer is moved into the respective groove; and transplanting the multiple chips onto a target substrate; where each functional layer is filled with multiple charged particles.

A display device may include: a substrate having a display area and a non-display area, and including a first surface and a second surface facing away from each other in a thickness direction of the substrate, and a side surface connecting the first and second surfaces; a light emitting element on the first surface of the substrate in the display area; a pad electrode on the first surface of the substrate in the non-display area; an intermediate electrode on the second surface of the substrate in the display area; and a side connection line on the side surface, and electrically connected to each of the pad electrode and the intermediate electrode. The pad electrode may include a first pad electrode and a second pad electrode. Opposite side surfaces of the second pad electrode may have the same inclination angles as opposite side surfaces of the first pad electrode.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.