An alternating electric field-driven gallium nitride (GaN)-based nano-light-emitting diode (nanoLED) structure with an electric field enhancement effect is provided. The GaN-based nanoLED structure forms a nanopillar structure that runs through an indium tin oxide (ITO) layer, a p-type GaN layer, a multiple quantum well (MQW) active layer and an n-type GaN layer and reaches a GaN buffer layer; and the nanopillar structure has a cross-sectional area that is smallest at the MQW active layer and gradually increases towards two ends of a nanopillar, forming a pillar structure with a thin middle and two thick ends. The shape of the GaN-based nanopillar improves the electric field strength within the QW layer in the alternating electric field environment and increases the current density in the QW region of the nanopillar structure under current driving, forming strong electric field gain and current gain, thereby improving the luminous efficiency of the device.

A LED packaging module includes a plurality of LED chips, a wiring layer, and an encapsulant component. The LED chips are spaced apart, each of which includes chip first, chip second, and chip side surfaces, and an electrode unit. The wiring layer is disposed on the chip second surfaces, has first, second, and side wiring layer surfaces, and is divided into a plurality of wiring parts spaced apart. The first wiring layer surface contacts and is electrically connected to the electrode units. The encapsulant component includes first and second encapsulating layers, covers the chip side surfaces, the chip first surfaces, and the side wiring layer surface, and fills gaps among the wiring parts. Each LED chip has a thickness represented by T.sub.A, the first encapsulating layer has a thickness represented by T.sub.B, and T.sub.A and T.sub.B satisfy a relationship: T.sub.B/T.sub.A1.

The presented devices and methods are directed to efficient and effective photon emission. In one embodiment, high-performance tunnel junction deep ultraviolet (UV) light-emitting diodes (LEDs) are created using plasma-assisted molecular beam epitaxy. The device heterostructure was grown under slightly Ga-rich conditions to promote the formation of nanoscale clusters in the active region. The nanoscale clusters can act as charge containment configurations. In one exemplary implementation, a device operates at approximately 255 nm light emission with a maximum external quantum efficiency (EPE) of 7.2% and wall-plug efficiency (WPE) of 4%, which are nearly one to two orders of magnitude higher than previously reported tunnel junction devices operating at this wavelength. The devices exhibit highly stable emission originating from highly localized carriers in Ga-rich regions formed in the active region, with nearly constant emission peak with increasing current density up to 200 A/cm.sup.2, due to the strong charge carrier confinement related to the presence of nanoclusters (e.g., Ga-rich) and radiative emission originating from highly localized carriers in Ga-rich regions formed in the active region

In accordance with aspects of the present technology, a unique charge carrier transfer process from c-plane InGaN to semipolar-plane InGaN formed spontaneously in nanowire heterostructures can effectively reduce the instantaneous charge carrier density in the active region, thereby leading to significantly enhanced emission efficiency in the deep red wavelength. Furthermore, the total built-in electric field can be reduced to a few kV/cm by cancelling the piezoelectric polarization with spontaneous polarization in strain-relaxed high indium composition InGaN/GaN heterostructures. An ultra-stable red emission color can be achieved in InGaN over four orders of magnitude of excitation power range. Accordingly, aspects of the present technology advantageously provide a method for addressing some of the fundamental issues in light-emitting devices and advantageously enables the design of high efficiency and high stability optoelectronic devices.

Provided is a light emitting device including a buffer layer, a body provided on the buffer layer, the body including a first semiconductor layer, an active layer, and a second semiconductor layer, a reflective layer configured to reflect light incident from the active layer, and a scattering pattern provided between the first semiconductor layer and the buffer layer, the scattering pattern being configured to scatter the light incident from the active layer and light incident from the reflective layer.

Provided is a light emitting device including a buffer layer, a body provided on the buffer layer, the body including a first semiconductor layer, an active layer, and a second semiconductor layer, a reflective layer configured to reflect light incident from the active layer, and a scattering pattern provided between the first semiconductor layer and the buffer layer, the scattering pattern being configured to scatter the light incident from the active layer and light incident from the reflective layer.

A light-emitting diode (LED) chip includes a substrate and an epitaxial structure. The epitaxial structure includes a first semiconductor layer, an active layer and a second semiconductor layer that are sequentially disposed on the substrate in such order. The second semiconductor layer has a light-emitting surface that is opposite to the active layer and that is formed with a microstructure. The microstructure includes a plurality of first protrusions that are separately disposed on the light-emitting surface, and a plurality of second protrusions that are disposed on the first protrusions and on the light-emitting surface between any two adjacent ones of the first protrusions.

A light-emitting device includes a base semiconductor layer, at least one core provided on the base semiconductor layer, the at least one core including a body portion extending in a first direction and a shielding portion provided at an upper end of the body portion, where a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the body portion in the second direction, a first insulating layer provided on an upper surface of the base semiconductor layer and an upper surface of the shielding portion, and at least one light-emitting portion provided on a side surface of the body portion.

According to one embodiment, a display device includes first wiring layers, a second wiring layer, a first insulating layer, first mounting electrodes, a second mounting electrode, a first light emitting element and a second light emitting element. The second mounting electrode is arranged to surround a first mounting electrode and an other first mounting electrode. The first light emitting element is mounted across the first mounting electrode and the second mounting electrode. The second light emitting element is mounted across the other first mounting electrode and the second mounting electrode. The second mounting electrode is electrically connected to the second wiring layer through a second opening of the first insulating layer, in a non-display area.

A substrate has a moth-eye nano pattern on a surface of the substrate in which cone-shaped protrusions are periodically formed, a first semiconductor layer on the moth-eye nano pattern and having a photonic crystal layer, an active layer on the first semiconductor layer and having a light-emitting layer, and a second semiconductor layer on the active layer.