A light-emitting device is provided. The light-emitting device includes a circuit board and a connection board disposed on the circuit board and having a first pad, a second pad, and a third pad. The light-emitting device also includes a first light-emitting element disposed on the connection board and having a first electrode and a second electrode and a second light-emitting element adjacent to the first light-emitting element and having a third electrode and a fourth electrode. The light-emitting device further includes a light-converting layer disposed on the first light-emitting element and the second light-emitting element. The thermal expansion coefficient of the connection board is smaller than the thermal expansion coefficient of the circuit board.

An array substrate is provided. In the array substrate, an organic material layer includes a first planar portion, a bending portion and a second planar portion which are connected in sequence. The first planar portion and the second planar portion are disposed on both sides of a base substrate. A lead structure includes a first lead portion, a bent lead portion and a second lead portion which are connected in sequence, wherein the first lead portion is disposed outside the first plane portion, the bent lead portion is disposed outside the bending portion, and the second lead portion is disposed outside the second plane portion. An LED layer and a control circuit are respectively disposed on the both sides of the base substrates.

A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection.

Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.

A method for manufacturing an image display device includes: providing a second substrate that includes a first substrate, and a semiconductor layer grown on the first substrate, the semiconductor layer including a light-emitting layer; providing a third substrate including: a circuit including a circuit element formed on a light-transmitting substrate, a first insulating film covering the circuit, and a conductive layer including a light-reflective part formed on the first insulating film; bonding the semiconductor layer to the third substrate; forming a light-emitting element from the semiconductor layer; forming a second insulating film covering the conductive layer, the light-emitting element, and the first insulating film; forming a via extending through the first and second insulating films; and electrically connecting the light-emitting element and the circuit element by the via.

Disclosed are a light-emitting device structure and a preparation method therefor. The light-emitting device structure includes a buffer layer, where a material of the buffer layer is a transparent material; and a light-emitting structure disposed on a side of the buffer layer, where the light-emitting structure includes at least one light-emitting unit; where the buffer layer includes at least one microlens structure, the microlens structure includes at least two sub-layers, and each the light-emitting unit corresponds to at least one microlens structure. In the present disclosure, the buffer layer of the transparent material is utilized to manufacture the the microlens structure. On the one hand, a problem of total reflection is alleviated and light extraction efficiency of the light-emitting device is improved. On the other hand, no additional microlens structures is required, thereby reducing production cost.

A light emitting device, includes: a substrate; a light emitting element on the substrate, the light emitting element having a first end portion and a second end portion arranged in a longitudinal direction; one or more partition walls disposed on the substrate, the one or more partition walls being spaced apart from the light emitting element; a first reflection electrode adjacent the first end portion of the light emitting element; a second reflection electrode adjacent the second end portion of the light emitting element; a first contact electrode connected to the first reflection electrode and the first end portion of the light emitting element; an insulating layer on the first contact electrode, the insulating layer having an opening exposing the second end portion of the light emitting element and the second reflection electrode to the outside; and a second contact electrode on the insulating layer.

The present invention can be applied to a technical field relating to display devices, and relates to a modular display device using, for example, light-emitting devices and to a method for manufacturing same. The present invention comprises: at least two display modules, each including a substrate having a first surface and a second surface, and a plurality of semiconductor light-emitting devices mounted on the first surface of the substrate; a light-absorbing layer positioned in a gap between the display modules; and an encapsulation layer positioned on the first surfaces of the display modules, wherein the light-absorbing layer may include: a first section positioned on the first surface of the substrate; a second section positioned in a gap between the display modules adjacent to each other; and a third section positioned on the second surface of the substrate.

The present disclosure provides a light-emitting device and a manufacturing method thereof, a taillight and a vehicle. The light-emitting device includes at least one light-emitting element located on one side of a backplane, wherein a wavelength of a first light emitted by each light-emitting element is 500 nm to 580 nm; a wavelength conversion layer located on one side of the at least one light-emitting element away from the backplane and configured to emit a second light with a different color from the first light under the excitation of the first light; and a first optical structure located on one side of the wavelength conversion layer away from the backplane, and including one or more optical elements, each of which is configured to focus the second light along a direction perpendicular to the backplane.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

A light emitting diode (LED) includes a substrate, a first semiconductor layer disposed on the substrate, an active layer disposed on a portion of the first semiconductor layer, a second semiconductor layer disposed on the active layer, a first conductive layer disposed on a portion of the first semiconductor layer, a second conductive layer disposed on the second semiconductor layer, and an insulating layer overlapping the first semiconductor layer, the second semiconductor layer, and the reflection pattern, in which the insulating layer has a first region having different thicknesses and a second region having a substantially constant thickness.