A photoelectric conversion apparatus includes a plurality of pixels each including a respective avalanche photodiode, wherein the plurality of pixels includes an active pixel that outputs a photon detection signal according to detection of a photon and an inactive pixel that does not output the photon detection signal, and wherein the photoelectric conversion apparatus further includes a control unit that recharges a voltage to be applied between an anode and a cathode of the avalanche photodiode of the inactive pixel.

A multispectral sensor array can include a combination of ranging sensor channels (e.g., LIDAR sensor channels) and ambient-light sensor channels tuned to detect ambient light having a channel-specific property (e.g., color). The sensor channels can be arranged and spaced to provide multispectral images of a field of view in which the multispectral images from different sensors are inherently aligned with each other to define an array of multispectral image pixels. Various optical elements can be provided to facilitate imaging operations. Light ranging/imaging systems incorporating multispectral sensor arrays can operate in rotating and/or static modes.

An integrated semiconductor optoelectronic component for sensing ambient light levels includes a silicon photomultiplier configured to deliver an output signal indicative of the intensity of the light that irradiates the component. The silicon photomultiplier has an active surface area for light detection. The component also includes an optical filter covering the active surface area of the silicon photomultiplier. The optical filter is adapted to selectively transmit light onto the active surface area as a function of wavelength. The optical filter is a scotopic filter and has a spectral transmission curve that mimics the spectral response of the human eye under low-light conditions. The component further includes readout electronics for processing the output signal of the silicon photomultiplier.

An avalanche diode arrangement includes a three-dimensional integrated circuit including a stack with at least a top-tier and a bottom-tier. The avalanche diode arrangement also includes a breakdown voltage monitor circuit. The top-tier includes an array of avalanche diodes. The bottom-tier includes an array of integrated light sources, located below the top-tier. In a calibration mode of operation, the light sources are operable to emit light towards the avalanche diodes. The breakdown voltage monitor circuit is operable to adjust bias voltages of the avalanche diodes depending on trigger events induced by light emitted by the light sources during the calibration mode of operation.

The control circuit according to the present disclosure includes a passive circuit (10) and an active circuit (20). The passive circuit (10) is configured to: supply current to a Single Photon Avalanche Diode (SPAD) element (6a) from a supply path (Rp); and output a first pulse signal (P1) according to a signal Generated in the SPAD element (6a). The active circuit (20) is configured to: supply current to the SPAD element (6a) selectively from among a plurality of supply paths; and output a second pulse signal (P2) according to a signal generated in the SPAD element (6a).

An optical sensing apparatus is provided. The optical sensing apparatus includes a semiconductor substrate composed of a first material; a transmitter-receiver set supported by the semiconductor substrate and including: (1) a photodetector includes an absorption region composed of a second material including germanium and configured to receive an optical signal and to generate photo-carriers in response to the optical signal; and (2) a light source including a light-emitting region composed of a third material including germanium and configured to emit a light toward a target; wherein the absorption region includes at least a property different from a property of the light-emitting region, wherein the property includes strain, conductivity type, peak doping concentration, or a ratio of the peak doping concentration to a peak doping concentration of the semiconductor substrate; wherein the first material is different from the second material and the third material.

[Object] Provided are a light receiving device and a light receiving circuit that are capable of performing highly accurate ranging with an increased field of view (FOV). [Solving Means] A light receiving device according to the present disclosure includes a light detector array including a plurality of pixels each configured to output a pulse in response to a reaction of a light detector with a photon, a counter circuit configured to count the pulse outputted from at least one of the pixels of the light detector array, and a control circuit configured to select, from the light detector array, one of the pixels to be enabled and one of the pixels to be disabled, on the basis of the number of counts of the pulse from the counter circuit.

In some embodiments, the present disclosure relates to a single-photon avalanche detector (SPAD) device including a silicon substrate including a recess in an upper surface of the silicon substrate. A p-type region is arranged in the silicon substrate below a lower surface of the recess. An n-type avalanche region is arranged in the silicon substrate below the p-type region and meets the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction.

A single photon detection device is provided. The single photon detection device comprises a photodetection layer including a first surface and a second surface positioned on opposite sides. The photodetection layer comprises a first well having a first conductivity type, backside patterns positioned between the second surface and the first well, having pitches smaller than a wavelength of light to be detected, a heavily doped region positioned between the first surface and the first well, having a second conductivity type different from the first conductivity type, and a contact region electrically connected to the first well and having the first conductivity type.

An example system can include a support and two or more sensor elements mounted to the support. Each sensor element can be electrically connected to a common electrical node and may include: a respective quench resistor connected to a respective internal node; and a respective photodiode (PD) connected to the respective internal node; a differentiating element fed by at least one of the photodiodes; a first readout electrode fed by the common electrical node; and a second readout electrode fed by the differentiating element. The common electrical node may be connected to at least one of the quench resistors or at least one of the photodiodes.