A light-emitting element, a light-emitting element unit and a light-emitting element package are provided, which are each reduced in reflection loss and intra-film light absorption by suppressing multiple light reflection in a transparent electrode layer and hence have higher luminance. The light-emitting element 1 includes a substrate 2, an n-type nitride semiconductor layer 3, a light-emitting layer 4, a p-type nitride semiconductor layer 5, a transparent electrode layer 6 and a reflective electrode layer 7, and the transparent electrode layer 6 has a thickness T satisfying the following expression (1): $\begin{array}{cc}\frac{3}{4n}+0.30\left(\frac{}{4n}\right)T\frac{3}{4n}+0.45\left(\frac{}{4n}\right)& \left(1\right)\end{array}$
wherein is the light-emitting wavelength of the light-emitting element 4, and n is the refractive index of the transparent electrode layer 6.

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first metal pillar, a second metal pillar, and an insulating layer. The semiconductor layer includes a first surface, a second surface, and a light emitting layer. The first metal pillar is electrically connected to the second surface. The first metal pillar includes first and second metal layers. The first metal layer is provided between the second surface and at least a part of the second metal layer. The second metal pillar is arranged side by side with the first metal pillar, and electrically connected to the second surface. The second metal pillar includes third and fourth metal layers. The third metal layer is provided between the second surface and at least a part of the fourth metal layer. The insulating layer is provided between the first and second metal pillars.

The light-emitting element provides: a light-emitting structure, which comprises a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is disposed under a first region under the light-emitting structure and electrically connected to the second conductive semiconductor layer; a second electrode disposed under a second region under the light-emitting structure and electrically connected to the first conductive semiconductor layer. A connection electrode is connected the second electrode with the first conductive semiconductor layer. An insulating layer is disposed between the first and second electrodes; a first protective layer is disposed around the lower circumference of the light-emitting structure; and a second protective layer is disposed between the insulating layer and the light-emitting structure.

Solid state lighting (SSL) devices with improved contacts and associated methods of manufacturing are disclosed herein. In one embodiment, an SSL device includes an SSL structure having a first semiconductor material, a second semiconductor material spaced apart from the first semiconductor material, and an active region between the first and second semiconductor materials. The SSL device also includes a first contact on the first semiconductor material and a second contact on the second semiconductor material, where the first and second contacts define the current flow path through the SSL structure. The first or second contact is configured to provide a current density profile in the SSL structure based on a target current density profile.

A light emitting apparatus including: one or a plurality of light emitting devices each having a plurality of electrodes and each emitting light from the upper surface of the light emitting device; a plurality of terminal electrodes provided on the lower side of the light emitting devices in a positional relation with the light emitting devices and electrically connected to the electrodes of the light emitting devices; a first metal line brought into contact with the upper surfaces of the light emitting devices and one of the terminal electrodes, provided at a location separated away from side surfaces of the light emitting devices and created in a film creation process; and an insulator in which the light emitting devices and the first metal line are embedded.

An LED die includes a substrate, a pre-growth layer, a first insulating layer and a light emitting structure. The pre-growth layer, the first insulating layer and the light emitting structure are formed on the structure that order. The substrate includes a first electrode, a second electrode and an insulating part. The insulating part is formed between the first electrode and the second electrode. The LED die further includes a second insulating layer and a metal layer which are formed around the pre-growth layer. The present disclosure includes a method for manufacturing the LED die.

A micro LED includes a bonding layer, a P-N structure provided on the bonding layer, wherein the P-N structure comprises a P type semiconductor layer, an N type semiconductor layer and a light emitting layer formed between the P type semiconductor layer and the N type semiconductor layer; a top conductive layer formed on the P-N structure; and a doped P type contact layer, wherein if the P-N structure is a P-side up structure, a doped P type contact layer is provided between the N type semiconductor layer and the bonding layer, or if the P-N structure is an N-side up structure, the doped P type layer is provided between the N type semiconductor layer and the top conductive layer.

The present disclosure is to provide an optoelectronic device. The optoelectronic device comprises a heat dispersion substrate; a first connecting layer on the heat dispersion substrate; a diode stack structure comprising a protection layer and a second connecting layer on the protection layer, wherein the protection layer is on the first connecting layer; a light-emitting structure on the diode stack structure, wherein the light-emitting structure comprises a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; and a first electrode electrically connected to the diode stack structure and the light-emitting structure.

Diode includes first metal layer, coupled to p-type III-N layer and to first terminal, has a substantially equal lateral size to the p-type III-N layer. Central portion of light emitting region on first side and first metal layer includes first via that is etched through p-type portion, light emitting region and first part of n-type III-N portion. Second side of central portion of light emitting region that is opposite to first side includes second via connected to first via. Second via is etched through second part of n-type portion. First via includes second metal layer coupled to intersection between first and second vias. Electrically-insulating layer is coupled to first metal layer, first via, and second metal layer. First terminals are exposed from electrically-insulating layer. Third metal layer including second terminal is coupled to n-type portion on second side of light emitting region and to second metal layer through second via.

A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.