A semiconductor die includes a plurality of first transistors and a second transistor. The first transistors are disposed in a peripheral area of the semiconductor die. Each of the first transistors has a first contact pad. In a top view, the first contact pad of each of the first transistors has a first outer edge in a hexagonal shape. The second transistor is disposed in a central area of the semiconductor die. The second transistor has a second contact pad. In the top view, the second contact pad has a second outer edge in a rectangular shape. The peripheral area surrounds the central area. The first contact pads of the first transistors collectively surround the second contact pad of the second transistor.

A semiconductor structure includes: a first gate structure and a second gate structure extending in a first direction; a first base level metal interconnect (M0) pattern extending in a second direction perpendicular to the first direction; a second M0 pattern extending in the second direction; a third M0 pattern located between the first and second gate structures and extending in the first direction, two ends of the third M0 pattern connected to the first M0 pattern and the second M0 pattern, respectively; a fourth M0 pattern and a fifth M0 pattern located between the first and second M0 patterns and extending in the second direction. A distance between the fourth M0 pattern and the first M0 pattern in the first direction is equal to a minimum M0 pattern pitch, and a distance between the fourth M0 pattern and the second M0 pattern is equal to the minimum M0 pattern pitch.

The semiconductor device comprises a semiconductor body with a top side, a main electrode on the top side and a gate electrode. The semiconductor body comprises a drift layer of a first conductivity type, a first base region of a second conductivity type, a second base region of the first conductivity type, a first contact region of the first conductivity type and a second contact region of the second conductivity type. The second base region has a greater doping concentration than the drift layer. The first contact region adjoins the first base region and the top side. The second contact region adjoins the second base region and the top side. The main electrode is in electrical contact with the first and the second contact region. In a first lateral direction, at least a portion of the gate electrode is arranged between the first contact region and the second contact region.

The semiconductor device comprises a semiconductor body with a top side, a main electrode on the top side and a gate electrode. The semiconductor body comprises a drift layer of a first conductivity type, a first base region of a second conductivity type, a second base region of the first conductivity type, a first contact region of the first conductivity type and a second contact region of the second conductivity type. The second base region has a greater doping concentration than the drift layer. The first contact region adjoins the first base region and the top side. The second contact region adjoins the second base region and the top side. The main electrode is in electrical contact with the first and the second contact region. In a first lateral direction, at least a portion of the gate electrode is arranged between the first contact region and the second contact region.

In an embodiment, a semiconductor substrate is provided that includes a multilayer Group III nitride substrate having a first major surface and at least one heterojunction that is capable of supporting a two-dimensional charge gas. At least one contact includes a contact trench that extends into the multilayer Group III nitride substrate from the first major surface. The contact trench is filled with n-doped Group III nitride material to form an electrical connection to the two-dimensional charge gas. The semiconductor substrate further includes at least one dummy trench extending into the multilayer Group III nitride substrate from the first major surface. The dummy trench is partially filled with n-doped Group III nitride material. The dummy trench has a width B and the contact trench has a width b, where B1.1b.

In an embodiment, a semiconductor substrate is provided that includes a multilayer Group III nitride substrate having a first major surface and at least one heterojunction that is capable of supporting a two-dimensional charge gas. At least one contact includes a contact trench that extends into the multilayer Group III nitride substrate from the first major surface. The contact trench is filled with n-doped Group III nitride material to form an electrical connection to the two-dimensional charge gas. The semiconductor substrate further includes at least one dummy trench extending into the multilayer Group III nitride substrate from the first major surface. The dummy trench is partially filled with n-doped Group III nitride material. The dummy trench has a width B and the contact trench has a width b, where B1.1b.

A semiconductor device including a first active area layer that extends in a first direction, a first metal over diffusion layer that extends in a second direction that is different than the first direction, the first metal over diffusion layer situated over the first active area layer, a first gate that extends in the second direction and over the first active area layer, a first gate end of the first gate that abuts a first dielectric region, and first low-k dielectric material situated in the first dielectric region.

A semiconductor device includes a first diffusion region having a longitudinal axis and a second diffusion region parallel with the first diffusion region. A source/drain contact contacts the first diffusion region and the second diffusion region. A gate has a centerline in a transverse direction to the longitudinal axis. A gate contact connects to the gate at a position that has an offset from the centerline away from the source/drain contact.

A structure, including an insulator within a substrate. The substrate includes a first active region adjacent a first sidewall of the insulator and a second active region adjacent a second sidewall of the insulator opposite the first sidewall. The structure further includes a conductive bridge over the insulator and coupling the first active region of the substrate to the second active region of the substrate. The structure includes a gate dielectric layer over the conductive bridge, a first work function metal over the first active region, and a second work function metal over the second active region.

A transistor. The transistor includes a top side with V-shaped trenches, wherein inner V-shaped trenches are at least partially conductive, and outer V-shaped trenches are at least partially non-conductive. Methods for producing such a transistor are also described.