An apparatus, a semiconductor package including the apparatus and a method are disclosed. The apparatus includes a semiconductor die having second stages of power amplifier disposed over a module substrate. The module substrate includes a plurality of layers, pluralities of vias, and pluralities of routing layers for heat dissipation and electrical connections.

A power integrated circuit includes a double-diffused metal-oxide-semiconductor (LDMOS) transistor formed in a first portion of the semiconductor layer with a channel being formed in a first body region. The power integrated circuit includes a first deep diffusion region formed in the first deep well under the first body region and in electrical contact with the first body region and a second deep diffusion region formed in the first deep well under the drain drift region and in electrical contact with the first body region. The first deep diffusion region and the second deep diffusion region together form a reduced surface field (RESURF) structure in the LDMOS transistor.

Embodiments of the present disclosure disclose a semiconductor device including a plurality of sources, a plurality of gates, and a plurality of drains located in an active area. In the active area, the sources, the gates, and the drains are alternately arranged along a first direction, and along the first direction, the sources include two sources respectively closest to ends of the arrangement, and any one of the gates is located between one of the sources and one of the drains, a length of at least a source located at the center along the first direction is greater than lengths of sources located at both ends along the first direction. The semiconductor device further includes a plurality of rows of through holes extending through a substrate and a multilayer semiconductor layer, a plurality of rows of the through holes are arranged along the first direction, and an orthographic projection.

Embodiments of the present disclosure disclose a semiconductor device including a plurality of sources, a plurality of gates, and a plurality of drains located in an active area. In the active area, the sources, the gates, and the drains are alternately arranged along a first direction, and along the first direction, the sources include two sources respectively closest to ends of the arrangement, and any one of the gates is located between one of the sources and one of the drains, a length of at least a source located at the center along the first direction is greater than lengths of sources located at both ends along the first direction. The semiconductor device further includes a plurality of rows of through holes extending through a substrate and a multilayer semiconductor layer, a plurality of rows of the through holes are arranged along the first direction, and an orthographic projection.

An Ill-nitride semiconductor based heterojunction power device is disclosed and includes a first and second heterojunction transistors formed on a substrate. The first and second heterojunction transistors include first and second Ill-nitride semiconductor regions formed over the substrate. The first Ill-nitride semiconductor region includes a first heterojunction, a first terminal connected to the first Ill-nitride semiconductor region, a second terminal laterally spaced from the first terminal and connected to the first Ill-nitride semiconductor region, and a first gate region over the first Ill-nitride semiconductor region between the first and second terminals. The second Ill-nitride semiconductor region includes a second heterojunction, a third terminal connected to the second Ill-nitride semiconductor region, a fourth terminal laterally spaced from the third terminal and connected to the second Ill-nitride semiconductor region, first highly doped semiconductor regions of a first conductivity type formed over the second Ill-nitride semiconductor region.

A semiconductor device includes a III-V compound semiconductor layer, a III-V compound barrier layer, a gate trench, and a p-type doped III-V compound layer. The III-V compound barrier layer is disposed on the III-V compound semiconductor layer. The gate trench is disposed in the III-V compound barrier layer. The p-type doped III-V compound layer is disposed in the gate trench, and a top surface of the p-type doped III-V compound layer and a top surface of the I-V compound barrier layer are substantially coplanar.

A semiconductor device includes a substrate, a buffer layer disposed on the substrate, a channel layer disposed on the buffer layer, a barrier layer disposed on the buffer layer, and a passivation layer disposed on the barrier layer. The semiconductor device further includes a device isolation region that extends through the passivation layer, the barrier layer, and at least a portion of the channel layer, and encloses a first device region of the semiconductor device. A damage concentration of the device isolation region varies along a depth direction, and is highest near a junction between the barrier layer and the channel layer.

Described herein are lateral III-N (e.g., GaN) devices having a III-N depleting layer. A circuit includes a depletion-mode transistor with a source connected to a drain of an enhancement-mode transistor. The gate of the depletion-mode transistor and the gate of the enhancement-mode transistor are biased at zero volts, and the drain of the depletion-mode transistor is biased at positive voltage to block a current in a forward direction. Then, the bias of the gate of the enhancement-mode transistor is changed to a first voltage greater than the threshold voltage of the enhancement-mode transistor and a first current is allowed to flow through the channel in a forward direction. Then, the bias of the gate of the depletion-mode transistor is changed to a second voltage and a second current is allowed to flow through the channel in a forward direction where the second current is greater than the first current.

A curved-gate transistor structure, wherein gate regions of the curved-gate transistor structure are curved, wherein the curved-gate transistor structure comprises semiconductor structural units, each semiconductor structural unit further comprises body contact regions, the body contact regions and source region are on the same side of the gate region, each semiconductor structural unit further comprises a curved gate region; the body contact regions are added near the source region, and contact regions of each of the semiconductor structural units structure can easily form a network to enhance latch-up resistance; each of the first metal blocks can be connected to a same or different potential, and the two branches of the gate regions of the same semiconductor structural unit can also be connected to a same or different potential.

Semiconductor devices can include a reservoir of ions and one or more channel regions. Additionally, the semiconductor devices can include one or more diffusion control devices that control the flow of ions from the reservoir to the one or more channel regions. The presence of ions in the one or more channel regions can be detected and used to determine that the semiconductor devices have been subjected to one or more events.