Disclosed are a double-sided solar cell and a preparation method therefor. The double-sided solar cell comprises: a silicon wafer having a PN junction, and a front first silicon oxide layer, a front second silicon oxide layer, a front first nitrogen-containing silicon compound layer, a front second nitrogen-containing silicon compound layer, and a front third silicon oxide layer that are located on one side of an N-type layer of the silicon wafer and are sequentially stacked along a direction away from the silicon wafer; and a passivation layer, a back silicon oxide layer, a back first nitrogen-containing silicon compound layer, and a back second nitrogen-containing silicon compound layer that are located on one side of a P-type layer of the silicon wafer and are sequentially stacked along the direction away from the silicon wafer.

Presented herein are X-ray sensors comprising graphitic carbon nitride materials (gCNs) and a processes for the manufacture of the gCNs and X-ray sensors.

Presented herein are X-ray sensors comprising graphitic carbon nitride materials (gCNs) and a processes for the manufacture of the gCNs and X-ray sensors.

According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. In a case where a photoluminescence spectrum of the photoelectric conversion layer is measured at a temperature of 100 K or lower, a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A100B).

According to one embodiment, a solar cell includes a first electrode, a second electrode, and a photoelectric conversion layer disposed between the first electrode and the second electrode. In a case where a photoluminescence spectrum of the photoelectric conversion layer is measured at a temperature of 100 K or lower, a first maximum value (A) which is a maximum value of emission intensity in a wavelength range of more than 650 nm and 1000 nm or less is 100 times or less of a second maximum value (B) which is a maximum value of emission intensity in a wavelength range of 600 nm or more and 650 nm or less (A100B).

The present invention relates generally to the field of organic chemistry and particularly to the organic compound for organic photovoltaic devices. More specifically, the present invention is related to the organic compounds and the organic photovoltaic devices based on these compounds. In one preferred embodiment, this organic compound has the general structural formula

##STR00001##

where Het.sub.1 is a predominantly planar polycyclic molecular system of first type; Het.sub.2 is a predominantly planar polycyclic molecular system of second type; A is a bridging group providing a lateral bond of the molecular system Het.sub.1 with the molecular system Het.sub.2 via strong chemical bonds; n is 1, 2, 3, 4, 5, 6, 7 or 8; B1 and B2 are binding groups; i is 0, 1, 2, 3, 4, 5, 6, 7 or 8; j is 0, 1, 2, 3, 4, 5, 6, 7 or 8; S1 and S2 are groups providing solubility of the organic compound; k is 0, 1, 2, 3, 4, 5, 6, 7 or 8; m is 0, 1, 2, 3, 4, 5, 6, 7 or 8; D1 and D2 are substituents independently selected from a list comprising CH.sub.3, C.sub.2H.sub.5, NO.sub.2, Cl, Br, F, CF.sub.3, CN, OH, OCH.sub.3, OC.sub.2H.sub.5, OCOCH.sub.3, OCN, SCNNH.sub.2, NHCOCH.sub.3, C.sub.2Si(CH.sub.3).sub.3, and CONH.sub.2; y is 0, 1, 2, 3, 4, 5, 6, 7 or 8; and z is 0, 1, 2, 3, 4, 5, 6, 7 or 8. Said organic compound absorbs electromagnetic radiation in at least one predetermined spectral subrange within a wavelength range from 400 to 3000 nm and is capable to form supramolecules. The molecular system Het.sub.1, the bridging group A, and the molecular system Het.sub.2 are capable to form a donor-bridge-acceptor system providing dissociation of excited electron-hole pairs. A solution of the organic compound or its salt is capable of forming a solid photovoltaic layer on a substrate.

Disclosed are functionalized Group IVA particles, methods of preparing the Group IVA particles, and methods of using the Group IVA particles. The Group IVA particles may be passivated with at least one layer of material covering at least a portion of the particle. The layer of material may be a covalently bonded non-dielectric layer of material. The Group IVA particles may be used in various technologies, including lithium ion batteries and photovoltaic cells.

Thermoelectric conversion materials, expressed by the following formula: Bi.sub.1-xM.sub.xCu.sub.1-wO.sub.a-yQ1.sub.yTe.sub.b-zQ2.sub.z. Here, M is at least one element selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 and Q2 are at least one element selected from the group consisting of S, Se, As and Sb; x, y, z, w, a, and b are 0x<1, 0<w<1, 0.2<a<4, 0y<4, 0.2<b<4, 0z<4 and x+y+z>0. These thermoelectric conversion materials may be used for thermoelectric conversion elements, where they may replace thermoelectric conversion materials in common use, or be used along with thermoelectric conversion materials in common use.

Methods for fabricating radiation-detecting structures are presented. The methods include, for instance: fabricating a radiation-detecting structure, the fabricating including: providing a semiconductor substrate, the semiconductor substrate having a plurality of cavities extending into the semiconductor substrate from a surface thereof; and electrophoretically depositing radiation-detecting particles of a radiation-detecting material into the plurality of cavities extending into the semiconductor substrate, where the electrophoretically depositing fills the plurality of cavities with the radiation-detecting particles. In one embodiment, the providing can include electrochemically etching the semiconductor substrate to form the plurality of cavities extending into the semiconductor substrate. In addition, the providing can further include patterning the surface of the semiconductor substrate with a plurality of surface defect areas, and the electrochemically etching can include using the plurality of surface defect areas to facilitate electrochemically etching into the semiconductor substrate through the plurality of surface defect areas to form the plurality of cavities.

According to example embodiments, an electronic device includes a substrate, an insulating layer on the substrate, and a diode layer on the insulating layer. The diode layer includes a two dimensional (2D) material layer. The 2D material layer includes an N-type region and a P-type region. According to example embodiments, a method of manufacturing an electronic device includes forming an insulating film on a substrate, forming a 2D material layer on the insulating film, and dividing the 2D material layer into an N-type region and a P-type region.