The present disclosure provides a display substrate, a method for manufacturing the display substrate and a display panel. The display substrate includes: a first semiconductor layer on a base substrate, where an active layer of the first thin film transistor is in the first semiconductor layer, and the active layer of the first thin film transistor at least comprises a channel region and a drain contact region; an interlayer insulation layer on a side of the first semiconductor layer away from the base substrate; and a first conductive layer on a side of the interlayer insulation layer away from the first semiconductor layer, wherein the pixel electrode is located in the first conductive layer, and the pixel electrode in the pixel unit is directly and electrically connected to the drain contact region of the active layer of the first thin film transistor through a through hole.

The present disclosure provides an electronic device comprising a substrate, and an electrode. The substrate comprises a base, a first metal layer disposed on the base, a second metal layer disposed on the first metal layer and electrically connected to the first metal layer, and an insulating layer disposed on second metal layer. The electrode is disposed on the insulating layer. The substrate comprises a high-level region and a low-level region. The insulating layer comprises an opening in the low-level region to expose a part of the second metal layer. A part of the electrode is disposed in the high-level region and another part of the electrode is disposed in the low-level region.

In an active matrix display device, electric characteristics of thin film transistors included in a circuit are important, and performance of the display device depends on the electric characteristics. Thus, by using an oxide semiconductor film including In, Ga, and Zn for an inverted staggered thin film transistor, variation in electric characteristics of the thin film transistor can be reduced. Three layers of a gate insulating film, an oxide semiconductor layer and a channel protective layer are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the thickness of a region overlapping with the channel protective film is larger than that of a region in contact with a conductive film.

In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

A liquid crystal display device including a first substrate, a second substrate disposed so as to face the first substrate and a liquid crystal layer disposed between the first and the second substrates, the first substrate including: a display area portion in which a plurality of pixels are arranged in a manner of a matrix; and a frame edge area lying outside the display area portion, the frame edge area including a peripheral circuit configured to drive the plurality of pixels of the display area portion, the peripheral circuit having at least one transistor, wherein a channel area of the transistor is covered with a conductive layer via an inorganic insulating layer, the inorganic insulating layer and the conductive layer being stacked in a direction orthogonal to a surface of the first substrate in the stated order, and a predetermined negative potential is applied to the conductive layer.

A display panel and manufacturing method. The method includes: forming a source electrode, a drain electrode and a channel on a substrate; depositing a first insulation layer; forming multiple color photoresists on the first insulation layer, and the source electrode, the drain electrode and the channel are located between two adjacent color photoresists; forming a gate electrode and a common electrode by a same process, and the gate electrode is located on the first insulation layer, and the common electrode is located on the photoresist; forming a second insulation layer having a through hole communicated with the source electrode on the gate electrode and the common electrode; forming a pixel electrode on the second insulation layer. The pixel electrode contacts with the source electrode through the through hole, and a storage capacitor is formed. The storage capacitor can be increased and the current leakage of the pixel electrode improved.

A display apparatus includes a protective layer, a substrate including a non-display area adjacent to a display area, and a sub-pixel in the display area and including a conductive layer, an inorganic insulating layer on the conductive layer, an organic insulating layer on the inorganic insulating layer, and a display device connected to the conductive layer. The display apparatus further includes a power supply line including a first power supply line and a second power supply line electrically connected to the sub-pixel; and an insulating dam as at least one layer in the non-display area. The non-display area includes the insulating dam, the power supply line are placed, and a spaced area which does not include the organic insulating layer. The protective layer covers an exposed portion of the power supply line.

An object is to reduce a capacitance value of parasitic capacitance without decreasing driving capability of a transistor in a semiconductor device such as an active matrix display device. Further, another object is to provide a semiconductor device in which the capacitance value of the parasitic capacitance was reduced, at low cost. An insulating layer other than a gate insulating layer is provided between a wiring which is formed of the same material layer as a gate electrode of the transistor and a wiring which is formed of the same material layer as a source electrode or a drain electrode.

A flexible display panel includes a bending area and a surrounding area adjacent to the bending area. The barrier layer includes first silicon nitride layers and first silicon oxide layers which are overlapped with the bending area. The first silicon nitride layers and the first silicon oxide layers are stacked alternately. Each of the first silicon nitride layers may have a thickness less than or equal to about 400 , and each of the first silicon oxide layers may have a thickness less than or equal to about 650 .

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.