A structured substrate configured for epitaxial growth of a semiconductor layer thereon is provided. Structures can be formed on a side of the structured substrate opposite that of the growth surface for the semiconductor layer. The structures can include cavities and/or pillars, which can be patterned, randomly distributed, and/or the like. The structures can be configured to modify one or more properties of the substrate material such that growth of a higher quality semiconductor layer can be obtained.

To provide an LED lighting apparatus and a method for manufacturing the same that can improve the bonding strength between an aluminum substrate and a printed wiring substrate. An LED lighting apparatus and a method for manufacturing the same, the LED lighting apparatus includes an aluminum substrate, a plurality of reflectivity-enhanced layers formed on the aluminum substrate, an LED device bonded on said plurality of reflectivity-enhanced layers, a printed wiring substrate bonded onto a region on the aluminum substrate other than a region where the plurality of reflectivity-enhanced layers are formed, a wire for connecting between the printed wiring substrate and the LED device, a frame member formed so as to surround said LED device, and a phosphor resin deposited over a region inside the frame member.

An LED heat sink for vehicles includes an injection molded product of a thermally conductive resin composition. The thermally conductive resin composition includes 50 to 90 weight % of a thermoplastic polyester resin having a number average molecular weight of 12,000 to 70,000, and 10 to 50 weight % of a flaked graphite having a fixed carbon content of at least 98 mass %, and an aspect ratio of at least 21, and the thermally conductive resin composition has a specific gravity of 1.4 to 1.7, and an in-plane thermal conductivity of at least 1 W/(m.Math.K).

Provided is a LED light-emitting device including: a carrier, which is a transparent body, and on a carrying surface of which conductors are provided; a plurality of LED chips, which are electrically connected to the conductors by way of eutectic bonding, so as to realize electrical connection among the plurality of LED chips; an encapsulation structural member, which is a transparent body and encapsulates on the periphery of the carrier and the LED chips; and a pair of electrodes, wherein positive electrode/negative electrodes in the pair of electrodes are electrically connected to the LED chips located at the most upstream/most downstream of a current transmission in the plurality of LED chips by means of the conductors, and extend to the outside of the encapsulation structural member.

A light emitting element module according to an embodiment of the present invention includes a first metal substrate; a second metal substrate on the first metal substrate; an insulation layer on the second metal substrate and including at least one of a carbide-based insulation material and a nitride-based insulation material; a circuit pattern on the insulation layer; and a light emitting element on the insulation layer.

An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer formed on the first semiconductor layer, and a second semiconductor layer; a first metal layer formed on a top surface of the second semiconductor layer; a second metal layer formed on a top surface of the first semiconductor layer; an insulative layer formed on the top surface of the first semiconductor layer and the top surface of the second semiconductor layer; wherein a space between a sidewall of the first metal layer and a sidewall of the semiconductor stack is less than 3 m.

The invention provides a shell integrated light-emitting diode assembly, which includes: a plurality of light-emitting units, each of the light-emitting units including at least one light-emitting chip and an external wiring which is coupled to the light-emitting chip; and a shell structure, formed as a consolidation structure by a molding material for enclosing the light-emitting units to be inside the molding material; wherein the light-emitting units emit light through the molding material into an outside of the shell structure. The present invention also provides a shell integrated light-emitting diode lamp with the shell integrated light-emitting diode assembly, and a manufacturing method for the shell integrated light-emitting diode assembly.

A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode on a part of the first semiconductor layer, an electrode layer on the second conductive semiconductor layer, an insulating layer on the electrode layer, a second electrode on the electrode layer, a support member on the insulating layer, a first connection electrode connected to the first electrode, and a second connection electrode connected to the second electrode. The insulating layer is disposed on a side surface of the light emitting structure and the part of the first semiconductor layer. The insulating layer includes a first layer and a second layer having a different material from the first layer. The first layer of the insulating layer has a refractive index different from the second layer of the insulating layer.

Provided is an anisotropic conductive adhesive in which excellent optical characteristics and heat dissipation characteristics are obtainable. The anisotropic conductive adhesive contains conductive particles each comprising a metal layer having Ag as a primary constituent formed on an outermost surface of a resin particle, solder particles having a smaller average particle diameter than the conductive particles, reflective insulating particles having a smaller average particle diameter than the solder particles and a binder into which the conductive particles solder particles and reflective insulating particles are dispersed. The conductive particles and the reflective insulating particles efficiently reflect light, thereby improving light-extraction efficiency of an LED mounting body. Additionally, inter-terminal solder bonding of the solder particles during compression bonding increases contact area between opposing terminals, thereby enabling achievement of high heat dissipation characteristics.

An inorganic filler according to an embodiment of the present invention includes a boron nitride agglomerate and a coating layer formed on the boron nitride agglomerate and including a SiRNH.sub.2 group, and R is selected from the group consisting of an alkyl group having 1 to 3 carbon atoms, an alkene group having 2 to 3 carbon atoms, and an alkyne group having 2 to 3 carbon atoms.