A method for transferring a semiconductor structure is provided. The method includes: coating an adhesive layer onto a carrier substrate; disposing the semiconductor structure onto the adhesive layer, such that the adhesive layer temporarily adheres the semiconductor structure, in which the adhesive layer includes an adhesive component and a surfactant component therein after the disposing; irradiating the electromagnetic wave to the adhesive layer through the carrier substrate to reduce adhesion pressure of the adhesive layer to the semiconductor structure while remaining the semiconductor structure within a predictable position, in which the semiconductor structure has a rejection band or is completely opaque, the carrier substrate has a pass band, and the pass band of the carrier substrate and the rejection band of the semiconductor structure overlaps; and transferring the semiconductor structure from the adhesive layer to a receiving substrate structure after the adhesion pressure of the adhesive layer is reduced.

A method of manufacturing a light emitting device including: forming a supporting body on a mounting surface of each of semiconductor light emitting elements; arranging the semiconductor light emitting elements to be spaced apart from each other by a predetermined distance; and forming a wavelength conversion layer to continuously cover an upper surface and side surfaces of at least one of the semiconductor light emitting elements. The forming the wavelength conversion layer includes spraying a slurry provided by mixing particles of a wavelength conversion member and a thermosetting resin in a solvent onto the upper surface and the side surfaces of the semiconductor light emitting element, so that a thickness of the wavelength conversion layer at a lower portion of the side surfaces of the supporting body is smaller than the thickness on the upper surface and the side surfaces of the semiconductor light emitting element.

A display device is provided. The display device includes a substrate having a surface including a display area; a plurality of light-emitting diodes disposed on the display area of the substrate, wherein the light-emitting diode includes an electrode; and a plurality of bonding pads disposed on the substrate; a conductive element disposed between one of the plurality of bonding pads and the electrode of the at least one of the plurality of light-emitting diodes; and a first matrix element disposed on the substrate, wherein in a cross-sectional view, the first matrix element is disposed between adjacent two of the plurality of light-emitting diodes, and the electrode has a sidewall profile and at least a part of the sidewall profile of the electrode is in a shape of a curve.

A method of making an LED device and an LED device using a high-silica, fully-sintered glass substrate is provided. The high-silica substrate is at least 99% silica and is thin, such as less than 200 m in thickness. A phosphor containing layer is deposited on to the substrate and is laser sintered on the substrate such that a portion of the sintered phosphor layer embeds in the material of the substrate.

Various optoelectronic modules are described and include one or more optoelectronic devices. Each optoelectronic module includes one or more optoelectronic devices. Sidewalls laterally surround each optoelectronic device and can be in direct contact with sides of the optoelectronic device or, in some cases, with an overmold surrounding the optoelectronic device. The sidewalls can be composed, for example, of a vacuum injected material that is non-transparent to light emitted by or detectable by the optoelectronic device. The module also includes a passive optical element. Depending on the implementation, the passive optical element can be on a cover for the module, directly on a top surface of the optoelectronic device, or on an overmold surrounding the optoelectronic device. Methods of fabricating such modules are described as well, and can facilitate manufacturing the modules using wafer-level processes.

The present invention provides structures and methods that enable the construction of micro-LED chiplets formed on a sapphire substrate that can be micro-transfer printed. Such printed structures enable low-cost, high-performance arrays of electrically connected micro-LEDs useful, for example, in display systems. Furthermore, in an embodiment, the electrical contacts for printed LEDs are electrically interconnected in a single set of process steps. In certain embodiments, formation of the printable micro devices begins while the semiconductor structure remains on a substrate. After partially forming the printable micro devices, a handle substrate is attached to the system opposite the substrate such that the system is secured to the handle substrate. The substrate may then be removed and formation of the semiconductor structures is completed. Upon completion, the printable micro devices may be micro transfer printed to a destination substrate.

A thermosetting composition comprising: (A) a (meth)acrylate compound having a viscosity at 25 C. of 1 to 300 mPa.Math.s with which a substituted or unsubstituted aliphatic hydrocarbon group including 6 or more carbon atoms is ester-bonded; (B) spherical silica; and (C) a white pigment, and having a shear viscosity at 25 C. and 10 s.sup.1 of 1 Pa.Math.s or more and 500 Pa.Math.s or less and a shear velocity at 25 C. and 100 s.sup.1 of 0.3 Pa.Math.s or more and 100 Pas or less:

A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuK radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2 of 0 to 24 to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2 of more than 24 to 70 is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.

A semiconductor device including a first lead electrode and a second lead electrode; a semiconductor stack structure disposed on the member, the semiconductor stack structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active region interposed between the first and second conductive semiconductor layers; a first electrode electrically connected to the first conductive semiconductor layer; a second electrode electrically connected to the second conductive semiconductor layer; a plating layer configured to bond the semiconductor stack structure to the member; and a first wavelength converter that covers at least side surfaces of the semiconductor stack structure.

A purpose of the present invention is to provide an optical unit that is capable of effectively sealing one or a plurality of optical devices even without a special material, a special structure, etc. In an optical unit of the present invention, the sealing section (50) includes: a circular seal section (51) surrounding one or a plurality of optical devices (40) on a wiring substrate from an in-plane direction of the wiring substrate; and an inside filling section (52) with which inside of the seal section (51) is filled and that seals the one or plurality of optical devices (40). The optical devices (40) are each a light emitting unit, a light receiving device, an image sensor, an X-ray sensor, or a power generating device. The seal section (51) and the inside filling section (52) are each configured of a cured thermosetting resin. The inside filling section (52) has light transmittance that is higher than light transmittance of the seal section (51). The inside filling section (52) has a modulus of elasticity that is smaller than a modulus of elasticity of the seal section (51).