An LED is provided, the LED comprising a lighting assembly and a light bead. The light head encases the lighting assembly. A cross-section of an upper portion of the light bead is an asymmetric shape with respect to the projection of a normal of the lighting assembly on the cross-section of the upper portion of the light bead, while a cross-section at the lower portion of the light bead perpendicular to the axis is a symmetric shape with respect to the projection of the normal of the lighting assembly on the cross-section at the lower portion of the light bead. The lighting assembly is located at a symcenter of the lower portion of the light bead. The aforementioned LED can increase its visible range, and can ensure an even distribution of the internal stress surrounding the lighting assembly. An LED packaging method is also provided.

An LED package structure includes a conductive frame assembly, a reflective housing, an UV LED chip disposed on the conductive frame assembly, and a die-attach adhesive for bonding the UV LED chip to the conductive frame assembly. The reflective housing includes Silicone Molding Compound (SMC) and filler mixed in the SMC. The energy gap of the filler is greater than or equal to 4 eV. The energy gap of the filler thereof can be chosen by the following formulas. When the refractive index difference between the filler and the SMC is less than or equal to 0.2, the energy gap of the filler is satisfied the following formula. E1240 (nm.Math.eV)/(150(nm)). When the refractive index difference between the filler and the SMC is greater than 0.2, the energy gap of the filler is satisfied the following formula. E1240(nm.Math.eV)/(50(nm)).

The disclosed invention relates to a semiconductor light-emitting element comprising: a plurality of semiconductor layers which are provided with a growth substrate eliminating surface on the side where a first semiconductor layer is located; a support substrate which is provided with a first electrical pathway and a second electrical pathway; a joining layer which joins a first surface side of the support substrate with a second semiconductor layer side of the plurality of semiconductor layers, and is electrically linked with the first electrical pathway; a joining layer eliminating surface which is formed on the first surface, and in which the second electrical pathway is exposed, and which is open towards the plurality of semiconductor layers; and an electrical link for electrically linking the plurality of semiconductor layers with the second electrical pathway exposed in the joining layer eliminating surface.

The present application relates to a light-emitting film, a method of manufacturing the same, a lighting device and a display device. The present application may provide a light-emitting film capable of providing a lighting device having excellent color purity and efficiency and an excellent color characteristic. The characteristics of the light-emitting film of the present application may be stably and excellently maintained for a long time. The light-emitting film of the present application may be used for various uses including photovoltaic applications, an optical filter or an optical converter, as well as various lighting devices.

The present disclosure relates to a method for manufacturing a self-assembled nano-scale LED electrode assembly and more particularly, to a method for manufacturing a self-assembled nano-scale LED electrode assembly in which a nano-scale LED device can be self-aligned on two different electrodes without being chemically and physically damaged and the number of nano-scale LED devices to be mounted can be remarkably increased, and alignment and electrical connection of the LED devices can be further improved.

A method for manufacturing a light-emitting device includes providing a soluble member to cover at least one lateral surface of a light-emitting element. The soluble member includes a material soluble in a first solvent. A light-shielding member is provided to cover at least one lateral surface of the soluble member. The light-shielding member includes a light-shielding resin less soluble in the first solvent than the soluble member. The soluble member is removed with the first solvent. A first light-transmissive member is provided in a space formed by removing the soluble member.

A composition comprising: a first monomer comprising at least three thiol groups, each located at a terminal end of the first monomer, wherein the first monomer is represented by the following Chemical Formula 1-1: ##STR00001##
a second monomer comprising at least two unsaturated carbon-carbon bonds, each located at a terminal end of the second monomer, wherein the second monomer is represented by the following Chemical Formula 2: ##STR00002## wherein in Chemical Formulae 1 and 2 groups R.sup.2, R.sub.a to R.sub.d, Y.sub.a to Y.sub.d, L.sub.1 and L.sub.2, X and variables k3 and k4 are the same as described in the specification, and a first light emitting particle, wherein the first light emitting particle consists of a semiconductor nanocrystal comprising a Group II-VI compound, a Group III-V compound, a Group IV-VI compound, or a combination thereof, wherein the first light emitting particle has a core/shell structure having a first semiconductor nanocrystal being surrounded by a second semiconductor nanocrystal, and the first semiconductor nanocrystal being different from the second semiconductor nanocrystal.

In a method for producing a laser diode, a number of laser diodes are produced on a wafer. The wafer is broken down into wafer pieces, each wafer piece having a plurality of laser diodes being arranged side by side. One wafer piece is inserted into a first mount that includes a first covering element overlapping a front face of the wafer piece and shadowing a bottom area of the front face of the wafer piece. A minor layer is deposited on an unshadowed upper area of the wafer piece's front face. The wafer piece is inserted into a second mount, which includes a second covering element that shadows the minor layer of the upper area of the front face. An electrically conductive contact layer is deposited on an unshadowed bottom area of the wafer piece's front face. The wafer piece is subsequently broken down into individual laser diodes.

The present invention provides an optical semiconductor device for improving minimization and increase of detection precision. An optical semiconductor device A1 of the present invention includes: a substrate 1, including a semiconductor material, and including a main surface 111 and a back surface 112; a semiconductor light-emitting element 7A at the substrate; a semiconductor light-receiving element 7B at the substrate; a conductive layer 3, conducting the semiconductor light-emitting element 7A and the semiconductor light-receiving element 7B; and an insulating layer 2 between at least a portion of the conductive layer 3 and the substrate; wherein the substrate 1 includes a recess 14 recessed from the main surface 111 and including a bottom surface 142A of a light-emitting side recess where the semiconductor light-emitting element 7A is disposed, and a bottom surface 142B of a light-receiving side recess where the semiconductor light-receiving element 7B is disposed; a light-emitting side transparent portion 18A for light from the semiconductor light-emitting element 7A to pass through the bottom surface 142A of the light-emitting side recess to the back surface 112; and a light-receiving side transparent portion 18B for light from the back surface 112 to pass through the bottom surface 142B of the light-receiving side recess to the semiconductor light-receiving element 7B.

A light-emitting device includes a light emitting element, a resin package defining a recessed portion serving as a mounting region of the light emitting element, gate marks each formed on an outer side surface of the resin package, and leads disposed on the bottom surface of the recessed portion and electrically connected to the light emitting element. The light emitting element is mounted on the lead. The gate marks include a first gate mark formed on a first outer side surface of the resin package and a second gate mark formed on an outer side surface which is different than the first outer side surface.