Patent classifications
H10H20/036
LIGHT EMITTING DEVICE
A method of manufacturing a light emitting device includes: providing an undivided base having a first main surface and a second main surface on the opposite side from the first main surface, the undivided base having conductive patterns disposed on the first main surface and conductive patterns disposed on the second main surface; mounting a plurality of light emitting elements on the conductive patterns on the first main surface; forming a light reflecting member that integrally covers side surfaces of the light emitting elements and the first main surface of the undivided base; and, after the forming of the light reflecting member, forming at least one groove on the second main surface of the undivided base at a position corresponding to a space between the light emitting elements so that the groove reaches the first main surface and the undivided base is divided into a plurality of base members.
Hybrid Display using Inorganic Micro Light Emitting Diodes (uLEDs) and Organic LEDs (OLEDs)
A hybrid light emitting diode (LED) display and fabrication method are provided. The method forms a stack of thin-film layers overlying a top surface of a substrate. The stack includes an LED control matrix and a plurality of pixels. Each pixel is made up of a first subpixel enabled using an inorganic micro LED (uLED), a second subpixel enabled using an organic LED (OLED), and a third subpixel enabled using an OLED. The first subpixel emits a blue color light, the second subpixel emits a red color light, and the third subpixel emits a green color light. In one aspect, the stack includes a plurality of wells in a top surface of the stack, populated by the LEDs. The uLEDs may be configured vertical structures with top and bottom electrical contacts, or surface mount top surface contacts. The uLEDs may also include posts for fluidic assembly orientation.
Light emitting device and method of fabricating the same
A method of fabricating a light-emitting device, the method including forming a first resin comprising a phosphor inside a cavity of a package body on which a light-emitting diode chip is mounted, measuring color coordinates of light emitted by combination of the light-emitting diode chip and the phosphor, and correcting the color coordinates by forming a second resin on the first resin. The first resin is not fully cured before measuring and correcting the color coordinates.
Housing for a semiconductor chip, housing composite, semiconductor component and method of producing a semiconductor component
A housing for a semiconductor chip has a front side and a rear side opposite the front side, wherein the front side has a fastening area for the semiconductor chip; the rear side has a mounting area to mount the housing, wherein the mounting area runs obliquely to the fastening area; and the rear side has a resting area running parallel to the fastening area.
PACKAGE MANUFACTURING METHOD, LIGHT EMITTING DEVICE MANUFACTURING METHOD, PACKAGE, AND LIGHT EMITTING DEVICE
A method for manufacturing a package includes the steps of; preparing a lead frame having a frame, a first electrode, a second electrode, a first connecting portion connecting the frame and the first electrode, and a second connecting portion connecting the frame and the second electrode; placing the lead frame in a mold; injecting a first resin into the mold from an inlet of the mold located adjacent to the first electrode to mold a flange portion and a wall portion of the package; and cutting the lead frame and a part of the flange portion located adjacent to the first electrode. In the step of injecting the first resin, the mold and the lead frame together provide a hollow space into which the first resin is injected and in which a part of the flange portion is formed so as to have a thickness different from a thickness of the lead frame.
CARRIER, CARRIER LEADFRAME, AND LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
A carrier leadframe, including a frame body and a carrier, is provided. The frame body includes at least one supporting portion, and the carrier includes a shell and at least one electrode portion and is mechanically engaged with the frame body via the supporting portion. A method for manufacturing the carrier leadframe as described above, as well as a light emitting device made from the carrier leadframe and a method for manufacturing the device, are also provided. The carrier leadframe has carriers that are separate in advance and mechanically engaged with the frame body, thereby facilitating the quick release of material after encapsulation. Besides, in the carrier leadframe as provided, each carrier is electrically isolated from another carrier, so the electric measurement can be performed before the release of material. Therefore, the speed and yield of production of the light emitting device made from the carrier leadframe is improved.
LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THEREOF
The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.
Light Emitting Diode Package Structure And Manufacturing Method Thereof
A light emitting diode package structure including a base, a light emitting diode and an encapsulant is provided. The light emitting diode is disposed on a surface of the base and is adapted to generate and emit a light. The encapsulant is disposed on the base and encapsulates the light emitting diode. The encapsulant has a surface parallel to the surface of the base and a plurality of surfaces perpendicular to the surface of the base. The light, after passing through the surface of the encapsulant parallel to the surface of the base, has a first light intensity. The light, after passing through the surfaces of the encapsulant perpendicular to the surface of the base, has a second light intensity. The first light intensity is greater than the second light intensity. In addition, a manufacturing method of a light emitting diode package structure is also provided.
METHOD FOR MANUFACTURING PACKAGE, METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE, PACKAGE, AND LIGHT EMITTING DEVICE
A method for manufacturing a package includes a step of injecting a first resin through an injection port of a dies in which a lead frame has been placed. The method includes a step of cutting out a portion of a border between a first electrode and a first connection portion running through a first through hole, and cutting out a portion of a border between a second electrode and a second connection portion running through a second through hole after molding the first resin. The method includes a step of electroplating the first and second electrodes. The method includes a step of cutting out a remaining portion of the border between the first electrode and the first connection portion, and cutting out a remaining portion of the border between the second electrode and the second connection portion.
Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip
In at least one embodiment, a method is designed to produce optoelectronic semiconductor chips. A carrier assembly, which is a sapphire wafer, is produced. A semiconductor layer sequence is applied to the carrier assembly. The carrier assembly and the semiconductor layer sequence are divided into the individual semiconductor chips. The dividing is implemented by producing a multiplicity of selectively etchable material modifications in the carrier assembly in separation region(s) by focused, pulsed laser radiation. The laser radiation has a wavelength at which the carrier assembly is transparent. The dividing includes wet chemically etching the material modifications, such that the carrier assembly is singulated into individual carriers for the semiconductor chips solely by the wet chemical etching or in combination with a further material removal method.