A light emitting device includes: a light emitting element that includes a light extracting surface, an electrode formed surface opposite to the light extracting surface, one or more lateral surfaces, and a pair of electrodes positioned on the electrode formed surface; a light-transmissive member that includes a light entering surface, a light exiting surface opposite to the light entering surface, and one or more lateral surfaces, the light entering surface being disposed on the light extracting surface; an insulating member that covers the lateral surfaces and the electrode formed surface of the light emitting element, and is disposed to expose at least part of the pair of electrodes; a first metal layer that covers the lateral surfaces of the light-transmissive member; and a second metal layer that covers the lateral surfaces of the light emitting element interposing the insulating member.

A hollow frame is configured to surround the periphery of a substantially self-supporting flip-chip light emitting device. The frame may be shaped to also contain a wavelength conversion element above the light emitting surface of the light emitting device. The lower surface of the light emitting device, which is exposed through the hollow frame, includes contact pads coupled to the light emitting element for surface mounting the light emitting module on a printed circuit board or other fixture. The flip-chip light emitting device may include a patterned sapphire substrate (PSS) upon which the light emitting element is grown, the patterned surface providing enhanced light extraction from the light emitting element, through the patterned sapphire substrate.

A device includes a support including at least a first area and a second area, and a plurality of first light emitting devices located over the first area of the support, each first light emitting device containing a first growth template including a first nanostructure, and each first light emitting device has a first peak emission wavelength. The device also includes a plurality of second light emitting devices located over the second area of the support, each second light emitting device containing a second growth template including a second nanostructure, and each second light emitting device has a second peak emission wavelength different from the first peak emission wavelength. Each first growth template differs from each second growth template.

A manufacturing method of a light emitting device includes preparing a wafer that is provided by arranging a plurality of semiconductor light emitting elements including semiconductor stacks and electrodes provided on first surfaces of the semiconductor stacks. A metal wire is wired in an arc shape between the electrodes of the plurality of semiconductor light emitting elements that are arranged in one direction on the wafer so as to connect each of the electrodes and the metal wire. A resin layer is provided on a side of the first surfaces of the semiconductor stacks in such a way that the metal wire is accommodated inside the resin layer. The wafer is cut along a boundary line to segment the plurality of semiconductor light emitting elements so as to singulate the plurality of semiconductor light emitting elements.

This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.

A purpose of the present disclosure is to provide an optical unit that is capable of effectively sealing one or a plurality of optical devices even without a special material, a special structure, etc. In an optical unit of the present disclosure, the sealing section (50) includes: a circular seal section (51) surrounding one or a plurality of optical devices (40) on a wiring substrate from an in-plane direction of the wiring substrate; and an inside filling section (52) with which inside of the seal section (51) is filled and that seals the one or plurality of optical devices (40). The optical devices (40) are each a light emitting unit, a light receiving device, an image sensor, an X-ray sensor, or a power generating device. The seal section (51) and the inside filling section (52) are each configured of a cured thermosetting resin. The inside filling section (52) has light transmittance that is higher than light transmittance of the seal section (51). The inside filling section (52) has a modulus of elasticity that is smaller than a modulus of elasticity of the seal section (51).

The present disclosure provides a method of manufacturing a light-emitting device, which comprises providing a first substrate and a plurality of semiconductor stacked blocks on the first substrate, and each of the plurality semiconductor stacked blocks comprises a first conductive-type semiconductor layer, a light-emitting layer on the first conductive-type semiconductor layer, and a second conductive-type semiconductor layer on the light-emitting layer; wherein there is a trench separating two adjacent semiconductor stacked blocks on the first substrate, and a width of the trench is less than 10 m; and conducting a first separating step to separate a first semiconductor stacked block of the plurality of semiconductor stacked blocks from the first substrate and keep a second semiconductor stacked block on the first substrate.

An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, and side areas connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and an electrically insulating shaped body, wherein the optoelectronic semiconductor chip is a flip-chip having the electrical contract locations only at one side, either the underside or the top side, the shaped body surrounds the optoelectronic semiconductor chip at its side areas, and the shaped body is free of a via that electrically connects the optoelectronic semiconductor chip.

At least one array of LEDs (e.g., in a flip chip configuration) is supported by a substrate having a light extraction surface overlaid with at least one lumiphoric material. Light segregation elements registered with gaps between LEDs are configured to reduce interaction between emissions of different LEDs and/or lumiphoric material regions to reduce scattering and/or optical crosstalk, thereby preserving pixel-like resolution of the resulting emissions. Light segregation elements may be formed by mechanical sawing or etching to define grooves or recesses in a substrate, and filling the grooves or recesses with light-reflective or light-absorptive material. Light segregation elements external to a substrate may be defined by photolithographic patterning and etching of a sacrificial material, and/or by 3D printing.

At least some embodiments of the present disclosure relate to a lid for covering an optical device. The lid includes a metal member and a transparent encapsulant. The metal member includes a top surface, a first bottom surface, and a second bottom surface between the top surface and the first bottom surface. The transparent encapsulant is surrounded by the metal member and covers at least a portion of the second bottom surface.