A light-emitting device including a first electrically-conductive member and a second electrically-conductive member, solder on upper surfaces of the first and second electrically-conductive members, a light-emitting element bonded to the upper surfaces of the first and second electrically-conductive members with the solder, a light-transmitting member on an upper surface of the light-emitting element, and a cover member covering the upper surfaces of the first and second electrically-conductive members and a lateral surface of the light-emitting element. A lateral surface of the first electrically-conductive member includes a first recessed surface contiguous with the upper surface and a second recessed surface located at a lower level than the first recessed surface. The solder continuously covers the upper surface of the first electrically-conductive member and at least part of the first recessed surface, and the cover member further covers the solder covering the first recessed surface and at least part of the second recessed surface.

Provided is a display panel including a first substrate, a light-emitting unit on the first substrate, and a light-converting unit. The light-converting unit converts a first light having a first peak wavelength emitted by the light-emitting unit into a second light having a second peak wavelength. The first peak wavelength is smaller than the second peak wavelength. The light-converting unit includes light conversion particles and first heat dissipation particles. The thermal conductivity of the first heat dissipation particles is greater than 50 W.Math.m.sup.1.Math.K.sup.1. Provided is another display panel provided including a first substrate, a light-emitting unit on the first substrate, a pixel define layer on the first substrate, and a separation layer. The pixel define layer includes an opening to accommodate the light-emitting unit. An adhesive layer is on the first substrate. At least one of the pixel define layer and the adhesive layer includes the heat dissipation particles.

Active control of light emitting diodes (LEDs) and LED packages within LED displays is disclosed. LED packages are disclosed that include a plurality of LED chips that form at least one LED pixel for an LED display. Each LED package may include an active electrical element that is configured to receive a control signal and actively maintain an operating state, such as brightness or grey level while other LED packages are being addressed. Active electrical elements may include active circuitry that includes one or more of a driver device, a signal conditioning or transformation device, a memory device, a decoder device, an electrostatic discharge (ESD) protection device, a thermal management device, and a detection device, among others. In this regard, each LED pixel of an LED display may be configured for operation with active matrix addressing.

Active control of light emitting diodes (LEDs) and LED packages within LED displays is disclosed. LED packages are disclosed that include a plurality of LED chips that form at least one LED pixel for an LED display. Each LED package may include an active electrical element that is configured to receive a control signal and actively maintain an operating state, such as brightness or grey level while other LED packages are being addressed. Active electrical elements may include active circuitry that includes one or more of a driver device, a signal conditioning or transformation device, a memory device, a decoder device, an electrostatic discharge (ESD) protection device, a thermal management device, and a detection device, among others. In this regard, each LED pixel of an LED display may be configured for operation with active matrix addressing.

The present application relates to the technical field of optical integrated devices, and specifically discloses a semiconductor light source device of optical integrated packaging with high light extraction efficiency and low device heat generation. The semiconductor light source device of optical integrated packaging comprises a substrate, an optical lens, a LED chip and a light transmitting glue layer, the substrate is provided with a circuit, and the optical lens is fixedly connected with the substrate; a light source cavity is provided between the optical lens and the substrate; the LED chip and the light transmitting glue layer are respectively accommodated in the light source cavity; the LED chip is arranged on top of the circuit and electrically connected with the circuit; the light transmitting glue layer is at least arranged on an upper surface of the LED chip; the light transmitting glue layer is used to reduce Fresnel loss when the light of the LED chip is taken out; an outer surface of the light transmitting glue layer is a convex surface, and the convex surface is used to reduce a total reflection loss of a light emitted by the LED chip.

Technologies for back side micro-LED assemblies are disclosed. In an illustrative embodiment, a micro-LED assembly includes several micro-LEDs and several photodiodes mounted on a base die. The base die is mounted on an integrated circuit (IC) die, such as a processor die. Through-silicon vias are defined in the IC die to carry electrical signals between the micro-LED assembly and transistors and other components near or at the front side of the IC die. An optical plug with an optical cable is positioned above the micro-LED assembly to couple light to and from the micro-LEDs and photodiodes. The short distance between the transistors on the front side of the IC die and the micro-LED assembly allows for high-bandwidth signals to be converted to optical signals with little loss. The optical cable can connect IC dies on the same circuit board, in the same housing, in the same rack, etc.

A semiconductor light-emitting element includes a light-emitting portion comprising a first region and a second region on the first region, a first electrode, a second electrode on the second region, and a passivation layer surrounding the second region. The first electrode includes a first conductive layer surrounding the first region, and a second conductive layer surrounding the first region on the first conductive layer.

Lensed optics for a modular linear light emitting device for precisely illuminating vertical and horizontal surfaces where needed at the required light intensity and uniformity ratio/s.

A display device includes a first electrode, and LED chip on the first electrode, an insulating layer embeds the first electrode, contacts a side surface of the LED chip, and exposes an upper surface, a second electrode having translucency in contact with an upper surface of the insulating layer and the upper surface of the LED chip, and a first reflection control layer on an upper surface of the second electrode and having a first opening in an area overlapping with the LED chip. The first reflection control layer has a first surface on a side of the second electrode and a second surface on opposite to the first surface, and a reflectance of the first surface is higher than a reflectance of the second surface.

A device emitting mid-infrared light that comprises a semiconductor substrate of GaSb or closely related material. The device can also comprise epitaxial heterostructures of InAs, GaAs, AISb, and related alloys forming light emitting structures cascaded by tunnel junctions. Further, the device can comprise light emission from the front, epitaxial side of the substrate.