A semiconductor device including a gate structure on a channel region portion of a fin structure, and at least one of an epitaxial source region and an epitaxial drain region on a source region portion and a drain region portion of the fin structure. At least one of the epitaxial source region portion and the epitaxial drain region portion include a first concentration doped portion adjacent to the fin structure, and a second concentration doped portion on the first concentration doped portion. The second concentration portion has a greater dopant concentration than the first concentration doped portion. An extension dopant region extending into the channel portion of the fin structure having an abrupt dopant concentration gradient of n-type or p-type dopants of 7 nm per decade or greater.

Semiconductor devices may include a plurality of active fins each extending in a first direction on a substrate, a gate structure extending on the active fins in a second direction, and a first source/drain layer on first active fins of the active fins adjacent the gate structure. At least one of two opposing sidewalls of a cross-section of the first source/drain layer taken along the second direction may include a curved portion having a slope with respect to an upper surface of the substrate. The slope may decrease from a bottom toward a top thereof.

A semiconductor device comprises first stack of nanowires arranged on a substrate comprises a first nanowire and a second nanowire, the second nanowire is arranged substantially co-planar in a first plane with the first nanowire the first nanowire and the second nanowire arranged substantially parallel with the substrate, a second stack of nanowires comprises a third nanowire and a fourth nanowire, the third nanowire and the fourth nanowire arranged substantially co-planar in the first plane with the first nanowire, and the first nanowire and the second nanowire comprises a first semiconductor material and the third nanowire and the fourth nanowire comprises a second semiconductor material, the first semiconductor material dissimilar from the second semiconductor material.

The present invention provides a semiconductor device, including a substrate, two gate structures disposed on a channel region of the substrate, an epitaxial layer disposed in the substrate between two gate structures, a first dislocation disposed in the epitaxial layer, wherein the profile of the first dislocation has at least two non-parallel slanting lines, and a second dislocation disposed adjacent to a top surface of the epitaxial layer, and the profile of the second dislocation has at least two non-parallel slanting lines.

Semiconductor device fabrication method and structures are provided having a substrate structure which includes a silicon layer at an upper portion. The silicon layer is recessed in a first region of the substrate structure and remains unrecessed in a second region of the substrate structure. A protective layer having a first germanium concentration is formed above the recessed silicon layer in the first region, which extends along a sidewall of the unrecessed silicon layer of the second region. A semiconductor layer having a second germanium concentration is disposed above the protective layer in the first region of the substrate structure, where the first germanium concentration of the protective layer inhibits lateral diffusion of the second germanium concentration from the semiconductor layer in the first region into the unrecessed silicon layer in the second region of the substrate structure.

At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) while reducing oxidization and fin critical dimension loss. A plurality of fins of a transistor are formed. A hard mask layer is formed on top of the fins. A first liner layer is formed over the fins and the hard mask layer. A partial deposition process is performed for depositing a first insulation material in a first portion of a channel between the fins. A second liner layer is formed above the fins, the first insulation material, and the channel. A second insulation material is deposited above the second liner layer. A fin reveal process is performed for removing the second insulation material to a predetermined height. An etch process is performed for removing the hard mask layer and the first and second liner layers above the predetermined height.

Nanosheet semiconductor devices and methods of forming the same include forming a first stack in a first device region, the first stack including layers of a first channel material and layers of a sacrificial material. A second stack is formed in a second device region, the second stack including layers of a second channel material, layers of the sacrificial material, and a liner formed around the layers of the second channel material. The sacrificial material is etched away using a wet etch that is selective to the sacrificial material and the second channel material and does not affect the first channel material or the liner. The liner protects the second channel material from the wet etch.

A method for forming a fin device includes forming semiconductor fins over a first dielectric layer. A second dielectric layer is directionally deposited into or on the first dielectric layer and on tops of the fins on horizontal surfaces. The second dielectric layer is configured to protect the first dielectric layer in subsequent processing. Sidewalls of the fins are precleaned while the first dielectric layer is protected by the second dielectric layer. The second dielectric layer is removed to expose the first dielectric layer in a protected state.

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. An etch stop layer is deposited on the first insulator layer. A gate stack is formed over a channel region of the fin and over portions of the etch stop layer. A portion of the bulk semiconductor substrate is removed to expose portions of the etch stop layer and the fin, and a second insulator layer is deposited over exposed portions of the fin and the etch stop layer.

A method for forming a semiconductor device comprises forming a fin in a bulk semiconductor substrate and depositing a first insulator layer over portions of the bulk semiconductor substrate adjacent to the fin. The method further includes removing portions of the first insulator layer to reduce a thickness of the first insulator layer and expose a sidewall of the fin. An etch stop layer is deposited on the first insulator layer. A gate stack is formed over a channel region of the fin and over portions of the etch stop layer. A portion of the bulk semiconductor substrate is removed to expose portions of the etch stop layer and the fin, and a second insulator layer is deposited over exposed portions of the fin and the etch stop layer.