The present invention can be applied to a technical field relating to display devices, and relates to a modular display device using, for example, light-emitting devices and to a method for manufacturing same. The present invention comprises: at least two display modules, each including a substrate having a first surface and a second surface, and a plurality of semiconductor light-emitting devices mounted on the first surface of the substrate; a light-absorbing layer positioned in a gap between the display modules; and an encapsulation layer positioned on the first surfaces of the display modules, wherein the light-absorbing layer may include: a first section positioned on the first surface of the substrate; a second section positioned in a gap between the display modules adjacent to each other; and a third section positioned on the second surface of the substrate.

The present disclosure provides a light-emitting device and a manufacturing method thereof, a taillight and a vehicle. The light-emitting device includes at least one light-emitting element located on one side of a backplane, wherein a wavelength of a first light emitted by each light-emitting element is 500 nm to 580 nm; a wavelength conversion layer located on one side of the at least one light-emitting element away from the backplane and configured to emit a second light with a different color from the first light under the excitation of the first light; and a first optical structure located on one side of the wavelength conversion layer away from the backplane, and including one or more optical elements, each of which is configured to focus the second light along a direction perpendicular to the backplane.

This invention is related to LED Light Extraction for optoelectronic applications. More particularly the invention relates to (Al, Ga, In)N combined with optimized optics and phosphor layer for highly efficient (Al, Ga, In)N based light emitting diodes applications, and its fabrication method. A further extension is the general combination of a shaped high refractive index light extraction material combined with a shaped optical element.

The present disclosure provides a light-emitting device. The light-emitting device comprises a substrate; a light-emitting stack which emits infrared (IR) light on the substrate; and a semiconductor window layer comprising AlGaInP series material disposed between the substrate and the light-emitting stack.

Various optoelectronic modules are described that include an optoelectronic device (e.g., a light emitting or light detecting element) and a transparent cover. Non-transparent material is provided on the sidewalls of the transparent cover, which, in some implementations, can help reduce light leakage from the sides of the transparent cover or can help prevent stray light from entering the module. Fabrication techniques for making the modules also are described.

An optical device includes a semiconductor element configured to emit emission light or to receive incident light, including a first fitting part including a portion having a convex shape in a first region; an optical member arranged on an optical path of the emission light emitted from the semiconductor element or the incident light entering the semiconductor element, including a second fitting part fitted to at least a part of the portion having the convex shape, the first region being opposed to the optical member; and a joint part that joins the semiconductor element and the optical member, arranged between the first fitting part and the second fitting part.

A display device is provided. The display device includes a first substrate; a first transistor and a second transistor disposed over the first substrate; a common electrode disposed over the first substrate; and a light-emitting diode chip (LED chip) disposed over the first substrate and disposed corresponding to the first transistor and the second transistor. The light-emitting diode chip includes a first light-emitting unit and a second light-emitting unit, wherein the first light-emitting unit is electrically connected to the first transistor and the common electrode, and the second light-emitting unit is electrically connected to the second transistor and the common electrode.

An opto-electric hybrid board includes opto-electric module portions respectively defined on opposite end portions of an elongated insulation layer, and an interconnection portion defined on a portion of the insulation layer between the opto-electric module portions and including an optical waveguide. A metal reinforcement layer extends over the opto-electric module portions into the interconnection portion. A portion of the metal reinforcement layer present in the interconnection portion has a smaller width than portions of the metal reinforcement layer present in the opto-electric module portions, and has a discontinuity extending widthwise across the metal reinforcement layer. This arrangement makes it possible to protect the optical waveguide from the bending and the twisting of the interconnection portion, while ensuring the flexibility of the interconnection portion including the optical waveguide.

A light-emitting display device includes a substrate, several light emitting units for emitting light with different wavelengths, and an optical lens. The substrate has at least one receiver for containing these light emitting units. A light guide structure of the light-emitting display device can be the receiver with a specific designed, a frame body with at least one corresponding through hole formed on the corresponding receiver, or at least one optical element formed on the corresponding receiver, so as the light emitted by the light emitting units can be reflected towards the preset optical axis. And the optical lens is formed on the light guide structure as medium for mixing lights of different wavelengths for achieving a uniform lighting effect.

A light-emitting element includes a light-emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode and a second contact electrode located on the light-emitting structure, and respectively making ohmic contact with the first conductive semiconductor layer and the second conductive semiconductor layer; an insulation layer for covering a part of the first contact electrode and the second contact electrode so as to insulate the first contact electrode and the second contact electrode; a first electrode pad and a second electrode pad electrically connected to each of the first contact electrode and the second contact electrode; and a radiation pad formed on the insulation layer, and radiating heat generated from the light-emitting structure.