A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A light emitting diode device including a substrate, a plurality of terminals disposed on the substrate, and a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, in which each of the light sources includes a light emitting diode chip, and a wall surrounding side surfaces of the light emitting diode chip, at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip, and at least two light sources share the wall.

A light emitting diode device including a substrate, a plurality of terminals disposed on the substrate, and a plurality of light sources disposed on the substrate, electrically connected to the plurality of terminals, and configured to emit light, in which each of the light sources includes a light emitting diode chip, and a wall surrounding side surfaces of the light emitting diode chip, at least one of the light sources includes a wavelength converter disposed on the light emitting diode chip, and at least two light sources share the wall.

The present disclosure provides a display device including a display panel, an optical layer, and a cover layer. The display panel has a substrate with two opposite first edges. The optical layer is disposed on the display panel, and the optical layer has two opposite second edges corresponding to the two opposite first edges respectively. The cover layer is disposed on the optical layer. One of the two opposite first edges and one of the two opposite second edges corresponding to the one of the two opposite first edges are not aligned.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A semiconductor optical device, in which a light emitting region and a modulator region are integrated, includes a first mesa disposed in the light emitting region, protruding in a direction that intersects a light propagation direction, and including an active layer, first and second buried layers disposed on the first mesa in a direction that intersects the light propagation direction and sequentially stacked in a direction in which the first mesa protrudes, a first semiconductor layer disposed on the first mesa and the second buried layer, a second mesa disposed in the modulator region and including a light absorption layer, and a third buried layer disposed on the second mesa. The first semiconductor layer and the first buried layer each have a first conductivity type. The second buried layer has a second conductivity type different from the first conductivity type, and the third buried layer is a semi-insulating semiconductor layer.

A semiconductor optical device, in which a light emitting region and a modulator region are integrated, includes a first mesa disposed in the light emitting region, protruding in a direction that intersects a light propagation direction, and including an active layer, first and second buried layers disposed on the first mesa in a direction that intersects the light propagation direction and sequentially stacked in a direction in which the first mesa protrudes, a first semiconductor layer disposed on the first mesa and the second buried layer, a second mesa disposed in the modulator region and including a light absorption layer, and a third buried layer disposed on the second mesa. The first semiconductor layer and the first buried layer each have a first conductivity type. The second buried layer has a second conductivity type different from the first conductivity type, and the third buried layer is a semi-insulating semiconductor layer.

A display panel and a display apparatus including the display panel are presented herein. A display panel according to one or more embodiments includes a substrate; an insulating layer on the substrate; a bank pattern on the insulating layer; a first electrode on the bank pattern; a contact electrode on the insulating layer, the contact electrode spaced apart from the bank pattern; a light-emitting element on the first electrode; a first optical layer surrounding the light-emitting element, the first optical layer comprising an organic insulating material including metal particles; a second optical layer on the contact electrode; and a third optical layer on the first optical layer.

A display device includes a bank pattern disposed on a substrate, a first electrode pattern disposed on the bank pattern, a light-emitting element disposed on the first electrode pattern to be electrically connected to the first electrode pattern, a second electrode pattern configured to cover the light-emitting element, an inorganic insulating layer configured to cover the bank pattern, the first electrode pattern, and the light-emitting element between the first electrode pattern and the second electrode pattern, and a diffusion layer which includes a plurality of diffusion particles and is in contact with the inorganic insulating layer.

A radiation-emitting semiconductor device (1) is specified, comprising a semiconductor body (2) having an active region (20) provided for generating radiation, a carrier (3) on which the semiconductor body is arranged and an optical element (4), wherein the optical element is attached to the semiconductor body by a direct bonding connection.

Furthermore, a method for producing of radiation-emitting semiconductor devices is specified.