Embodiments of the disclosure are in the field of advanced integrated circuit structure fabrication and, in particular, buried channel structures integrated with non-planar structures. In an example, an integrated circuit structure includes a first fin structure and a second fin structure above a substrate. A gate structure is on a portion of the substrate directly between the first fin structure and the second fin structure. A source region is in the first fin structure. A drain region is in the second fin structure.

Provided is a three-dimension (3D) stacked semiconductor device which includes: a 1.sup.stsource/drain region connected to a 1.sup.st channel structure; and a 2.sup.nd source/drain region, above the 1.sup.st source/drain region, connected to a 2.sup.nd channel structure above the 1.sup.st channel structure, wherein the 2.sup.nd channel structure has a smaller length than the 1.sup.st channel structure in a channel-length direction, in which the 2.sup.nd source/drain region is connected to a 3.sup.rd source/drain region through the 2.sup.nd channel structure.

A super-steep switching device is provided. The super-steep switching device may include a substrate, a semiconductor channel on the substrate, a source electrode and a drain electrode, which are disposed on the semiconductor channel and spaced apart from each other, a gate electrode overlapping a portion of the semiconductor channel and not overlapping a remaining portion of the semiconductor channel, and an insulating layer disposed between the gate electrode and the semiconductor channel and covering an entire surface of the semiconductor channel.

The present disclosure relates to semiconductor structures and, more particularly, to gate-all-around field effect transistors and methods of manufacture. The structure includes: a plurality of stacked semiconductor nanosheets over a semiconductor substrate; a plurality of gate structures surrounding the plurality of semiconductor nanosheets; a conductive material between the plurality of semiconductor nanosheets and the plurality of gate structures; an inner sidewall spacer adjacent to each of the plurality of gate structures and conductive material; and source/drain regions on opposing sides of the plurality of gate structures, separated therefrom by the inner sidewall spacer.

A semiconductor device including a stacked structure including first vertically stacked channel regions positioned over second vertically stacked channel regions. The first and second vertically stacked channel regions have a mid dielectric layer positioned therebetween. A structure is present having a first portion in electrical communication with the first vertically stacked channel regions and a second portion in electrical communication with the second vertically stacked channel regions. The semiconductor device also includes at least one two-component gate cut structure present adjacent to the gate all around structure. A first component of the two-component gate cut structure in positioned on one side of the mid dielectric layer adjacent to the first portion of the gate structure, and a second component of the two-component gate cut structure is positioned on a second side of the mid dielectric layer adjacent to the second portion of the gate structure.

A semiconductor structure includes a first field effect transistor including a first gate spacer having first laterally-straight bottom edges that coincide with top edges of first laterally-straight sidewalls of the first gate dielectric. The semiconductor structure further includes a second field effect transistor including a second gate dielectric that includes at least one discrete gate-dielectric opening that overlies a respective second active region, and a second gate spacer including a contoured portion that overlies and laterally surrounds a second gate electrode, and at least one horizontally-extending portion that overlies the second active region and including at least one discrete gate-spacer openings. The second field effect transistor may have a symmetric or non-symmetric configuration.

Provided is a semiconductor device which includes: a 1.sup.st source/drain region connected to a 1.sup.st channel structure which is controlled by a 1.sup.st gate structure; a 2.sup.nd source/drain region, above the 1.sup.st source/drain region, connected to a 2.sup.nd channel structure which is controlled by a 2.sup.nd gate structure; and a middle isolation structure between the 1.sup.st gate structure and the 2.sup.nd gate structure, wherein the middle isolation structure comprises two or more vertically-stacked semiconductor layers.

A semiconductor device includes a first active pattern extending in a first direction, a second active pattern on the first active pattern and extending in the first direction, a gate structure on the first active pattern and the second active pattern and extending in a second direction intersecting the first direction, a first source/drain region on side faces of the gate structure and connected to the first active pattern, a second source/drain region on the side faces of the gate structure and connected to the second active pattern, and an intermediate connecting layer which includes a first intermediate conductive pattern between the first active pattern and the second active pattern, and a second intermediate conductive pattern connected to the first intermediate conductive pattern between the first source/drain region and the second source/drain region.

Gallium nitride (GaN) three-dimensional integrated circuit technology is described. In an example, an integrated circuit structure includes a layer including gallium and nitrogen, a plurality of gate structures over the layer including gallium and nitrogen, a source region on a first side of the plurality of gate structures, a drain region on a second side of the plurality of gate structures, the second side opposite the first side, and a drain field plate above the drain region wherein the drain field plate is coupled to the source region. In another example, a semiconductor package includes a package substrate. A first integrated circuit (IC) die is coupled to the package substrate. The first IC die includes a GaN device layer and a Si-based CMOS layer.

A semiconductor device is provided that includes an n-type field effect transistor including a plurality of vertically stacked silicon-containing nanowires located in one region of a semiconductor substrate, and a p-type field effect transistor including a plurality of vertically stacked silicon germanium alloy nanowires located in another region of a semiconductor substrate. Each vertically stacked silicon-containing nanowire of the n-type field effect transistor has a different shape than the shape of each vertically stacked silicon germanium alloy nanowire of the p-type field effect transistor.