A method of forming an integrated circuit employs a plurality of layers formed on a substrate including i) n-type modulation doped quantum well structure (MDQWS) structure with n-type charge sheet, ii) p-type MDQWS, iii) undoped spacer layer formed on the n-type charge sheet, iv) p-type layer(s) formed on the undoped spacer layer, v) p-type etch stop layer formed on the p-type layer(s) of iv), and vi) p-type layers (including p-type ohmic contact layer(s)) formed on the p-type etch stop layer. An etch operation removes the p-type layers of vi) for a gate region of an n-channel HFET with an etchant that automatically stops at the p-type etch stop layer. Another etch operation removes the p-type etch stop layer to form a mesa at the p-type layer(s) of iv) which defines an interface to the gate region of the n-channel HFET, and a gate electrode is formed on such mesa.

Heavily phosphor loaded LED packages having higher stability and a method for increasing the stability of heavily phosphor loaded LED packages. A silicone overlayer is provided on the phosphor silicone blend layer.

A heteroepitaxy strain-management structure for a light emitting device includes: a substrate or template; an epitaxial layer to be epitaxially formed over the substrate or template, wherein a calculated in-plane compressive strain to be exerted by the substrate or template to the epitaxial layer is equal to or larger than 1%; and a heavily doped interlayer inserted in-between the epitaxial layer and the substrate or template; wherein the heavily doped interlayer is of substantially the same material composition as that of the epitaxial layer, with a thickness of 40-400 nm, and doped at a doping level in the range of 510.sup.19 to 510.sup.20 cm.sup.3. Also provided is an ultraviolet light emitting device having a heteroepitaxy strain-management structure.

Light-emitting materials are made from a porous light-emitting semiconductor having quantum dots (QDs) disposed within the pores. According to some embodiments, the QDs have diameters that are essentially equal in size to the width of the pores. The QDs are formed in the pores by exposing the porous semiconductor to gaseous QD precursor compounds, which react within the pores to yield QDs. According to certain embodiments, the pore size limits the size of the QDs produced by the gas-phase reactions. The QDs absorb light emitted by the light-emitting semiconductor material and reemit light at a longer wavelength than the absorbed light, thereby down-converting light from the semiconductor material.

A light emitting device is provided. The light emitting device includes a substrate, an N type semiconductor layer formed on the substrate, an active layer, an electron-blocking layer, and a P type semiconductor layer formed on the electron-blocking layer. An N side electrode is formed on a first portion of the N type semiconductor layer, and the active layer is formed on a second portion of the N type semiconductor layer. The electron-blocking layer is a super lattice multi-layer structure formed on the active layer, the P type semiconductor layer is formed on the electron-blocking layer, and a P side electrode is formed on a portion of the P type semiconductor layer.

An LED element is provided with: a first semiconductor layer formed of an n-type nitride semiconductor; a second semiconductor layer formed on top of the first semiconductor layer and formed of quaternary mixed crystals of Al.sub.x1Ga.sub.y1In.sub.z1N (0<x1<1, 0<y1<1, 0<z1<1 and x1+y1+z1=1); a heterostructure formed on top of the second semiconductor layer and constituted of a laminate structure of a third semiconductor layer formed of In.sub.x2Ga.sub.1-x2N (0<x2<1) having a film thickness of greater than or equal to 10 nm, and a fourth semiconductor layer formed of Al.sub.x3Ga.sub.y3In.sub.z3N (0<x3<1, 0<y3<1, 0z3<1 and x3+y3+z3=1); and a fifth semiconductor layer formed on top of the heterostructure and formed of a p-type nitride semiconductor.

A light emitting device according to an embodiment comprises: a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer; a protective layer disposed above the light emitting structure and including a through region; a first electrode disposed in the through region and electrically connected to the first conductive semiconductor layer; an electrode pad electrically connected to the first electrode, and having a first region disposed on the first electrode and a second region disposed on the protective layer; and a second electrode electrically connected to the second conductive semiconductor layer.

The present invention relates to a light emitting diode (LED) which comprises multiple point-like conductive electrodes, a dielectric layer, and an epitaxial composite layer. The dielectric layer is disposed around each point-like conductive electrode, and the epitaxial composite layer is disposed both on the point-like conductive electrodes and the dielectric layer. Each point-like conductive electrode includes an ohmic-contact metal layer and a carbon-doped gallium arsenide epitaxial layer. The carbon-doped gallium arsenide epitaxial layer is disposed on the ohmic-contact metal layer and electrically connected to the epitaxial composite layer.

An aerosol jet printer is used to deposit freestanding quantum dot matrices over optical elements such as LEDs or photodetectors. The printing process avoids the need for photolithographic masks while allowing variation in matrix height to be obtained. The matrices may be assembled with no or little binder material.

An infrared LED element includes: a conductive support substrate; and a semiconductor laminate and includes a material that can be lattice-matched with InP, in which the semiconductor laminate includes: a first semiconductor layer indicating a first conductivity type; an active layer disposed on an upper layer of the first semiconductor layer; a second semiconductor layer disposed on an upper layer of the active layer and indicating a second conductivity type; and a third semiconductor layer disposed on an upper layer of the second semiconductor layer and contains Al.sub.aGa.sub.bIn.sub.cAs indicating the second conductivity type, the third semiconductor layer has an uneven part on a surface opposite to a side on which the second semiconductor layer is positioned, and the third semiconductor layer has band gap energy lower than band gap energy of the second semiconductor layer and higher than band gap energy of the active layer.