A light-emitting diode chip is provided and includes: a first doping-type semiconductor layer, a second doping-type semiconductor layer, and a multiple quantum well structure layer formed between the first doping-type semiconductor layer and the second doping-type semiconductor layer. The multiple quantum well structure layer includes multiple first quantum well structures and at least one second quantum well structure stacked in a distance direction of the first and second doping-type semiconductor layers. The first quantum well structures are used to emit first color light, and the at least second well structure is used to emit second color light different from the first color light. A total number of well layer of the at least one second quantum well structure is 1/15 of a total number of well layer of the first quantum well structures located between the at least one second quantum well structure and the second doping-type semiconductor layer.

A light-emitting diode chip is provided and includes: a first doping-type semiconductor layer, a second doping-type semiconductor layer, and a multiple quantum well structure layer formed between the first doping-type semiconductor layer and the second doping-type semiconductor layer. The multiple quantum well structure layer includes multiple first quantum well structures and at least one second quantum well structure stacked in a distance direction of the first and second doping-type semiconductor layers. The first quantum well structures are used to emit first color light, and the at least second well structure is used to emit second color light different from the first color light. A total number of well layer of the at least one second quantum well structure is 1/15 of a total number of well layer of the first quantum well structures located between the at least one second quantum well structure and the second doping-type semiconductor layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer that extends from the second type conductive layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer. The micro-LED chip further includes a metal layer formed on a portion of the light emitting layer that extends from the second type conductive layer.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

In some embodiments, a semiconductor structure includes: a first epitaxial oxide semiconductor layer; a metal layer; and a contact layer adjacent to the metal layer, and between the first epitaxial oxide semiconductor layer and the metal layer. The contact layer can include an epitaxial oxide semiconductor material. The contact layer can also include a region comprising a gradient in a composition of the epitaxial oxide semiconductor material adjacent to the metal layer, or a gradient in a strain of the epitaxial oxide semiconductor material over a region adjacent to the metal layer.

A method for manufacturing a laser diode device includes providing a substrate having a surface region and forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region. The epitaxial material is patterned to form a plurality of dice, each of the dice corresponding to at least one laser device, characterized by a first pitch between a pair of dice, the first pitch being less than a design width. Each of the plurality of dice are transferred to a carrier wafer such that each pair of dice is configured with a second pitch between each pair of dice, the second pitch being larger than the first pitch.

In one embodiment, a light emitting device comprises a first light emitting part including at least one light emitting cell; a second light emitting part including a plurality of light emitting cells, wherein each of the light emitting cells include a light emitting structure and a first electrode layer disposed under the light emitting structure; a plurality of pads disposed on the light emitting cell of the first light emitting part, wherein the pads are electrically connected to each of the light emitting cells of the first and second light emitting parts; a plurality of connection layers, each connection layer extending from a region under the light emitting cell of the first light emitting part to a region under the plurality of light emitting cells of the second light emitting part; a second electrode layer disposed under the light emitting cells of the first and second light emitting parts; an insulating layer disposed between the first and second electrode layers; and at least one gap part disposed between the at least one light emitting cell of the first light emitting part and the plurality of light emitting cells of the second light emitting part, wherein each of the plurality of connection layers extends through a region under the gap part and is electrically connected to each of the plurality of the light emitting cells of the second light emitting part.