A method, system, and arrangement for resetting qubits are disclosed. An example system includes one or more quantum circuit refrigerators for resetting qubits. Each of the quantum circuit refrigerators includes a tunneling junction and a control input for receiving a control signal. Photon-assisted single-electron tunneling takes place across the respective tunneling junction in response to a control signal. Capacitive or inductive coupling elements between the qubits and the quantum circuit refrigerators couple each qubit to the quantum circuit refrigerator(s). The qubits, quantum circuit refrigerators, and coupling elements are located in a cryogenically cooled environment. A common control signal line to the control inputs crosses into the cryogenically cooled environment from a room temperature environment.

The present disclosure provides techniques for epitaxial oxide materials, structures and devices. In some embodiments, an integrated circuit includes a field effect transistor (FET) and a waveguide coupled to the FET, wherein the waveguide comprises a signal conductor. The FET can include: a substrate comprising a first oxide material; an epitaxial semiconductor layer on the substrate, the epitaxial semiconductor layer comprising a second oxide material with a first bandgap; a gate layer on the epitaxial semiconductor layer, the gate layer comprising a third oxide material with a second bandgap, wherein the second bandgap is wider than the first bandgap; and electrical contacts. The electrical contacts can include: a source electrical contact coupled to the epitaxial semiconductor layer; a drain electrical contact coupled to the epitaxial semiconductor layer; and a first gate electrical contact coupled to the gate layer.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs.

Provided is a light emitting device including a buffer layer, a body provided on the buffer layer, the body including a first semiconductor layer, an active layer, and a second semiconductor layer, a reflective layer configured to reflect light incident from the active layer, and a scattering pattern provided between the first semiconductor layer and the buffer layer, the scattering pattern being configured to scatter the light incident from the active layer and light incident from the reflective layer.

Provided is a light emitting device including a buffer layer, a body provided on the buffer layer, the body including a first semiconductor layer, an active layer, and a second semiconductor layer, a reflective layer configured to reflect light incident from the active layer, and a scattering pattern provided between the first semiconductor layer and the buffer layer, the scattering pattern being configured to scatter the light incident from the active layer and light incident from the reflective layer.

Disclosed are a light-emitting device with quantum dots and a manufacturing method thereof. The light-emitting device includes a light-emitting diode chip, a transparent barrier layer, a quantum dot film, and a transparent protective layer. The transparent barrier layer is disposed on the light-emitting diode chip. The quantum dot film is disposed on the transparent barrier layer, such that the light-emitting diode chip is separated from the quantum dot film by the transparent barrier layer. The transparent protective layer is disposed on the quantum dot film, such that the quantum dot film is encapsulated between the transparent barrier layer and the transparent protective layer.

A light-emitting device includes a base semiconductor layer, at least one core provided on the base semiconductor layer, the at least one core including a body portion extending in a first direction and a shielding portion provided at an upper end of the body portion, where a width of a lower surface of the shielding portion in a second direction orthogonal to the first direction is greater than a width of the body portion in the second direction, a first insulating layer provided on an upper surface of the base semiconductor layer and an upper surface of the shielding portion, and at least one light-emitting portion provided on a side surface of the body portion.

A micro-LED structure includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extrudes along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by the top edge of the first type conductive layer.

A micro-LED structure includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extrudes along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by the top edge of the first type conductive layer.