The present invention relates to a light emitting diode (LED) chip, in which a hybrid sensor is formed in a nitride-based LED structure. A chip structure embedded with such a hybrid sensor functions as an LED light emitting sensor which can monitor environmental pollution while functioning as a lighting element at the same time and has an effect of being used as a variety of environment pollution sensors according to the type of an electrode material.

An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a first semiconductor layer sequence having a plurality of microdiodes, and a second semiconductor layer sequence having an active region. The first semiconductor layer sequence and the second semiconductor layer sequence are based on a nitride compound semiconductor material, the first semiconductor layer sequence is before the first semiconductor layer sequence in the direction of growth, and the microdiodes form an ESD protection for the active region.

A light emitting device package includes a cell array including a plurality of semiconductor light emitting units, and having a first surface and a second surface opposite the first surface, each of the plurality of semiconductor light emitting units having a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer stacked on each other. The light emitting device package may further include a plurality of wavelength conversion units disposed on the first surface of the cell array to correspond to the plurality of semiconductor light emitting units, respectively, each configured to convert a wavelength of light, emitted by a respective one of the plurality of semiconductor light emitting units, into a different wavelength of light, and a partition structure disposed in a space between the plurality of wavelength conversion units, and a plurality of switching units spaced apart from the plurality of wavelength conversion units within the partition structure, and electrically connected to the plurality of semiconductor light emitting units.

One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.

An object of the present invention is to provide a light-emitting device that can implement a natural, vivid, highly visible and comfortable appearance of colors and appearance of objects as if the objects are seen outdoors, and to provide a light-emitting device that can change the appearance of colors of the illuminated objects so as to satisfy the requirements for various illuminations, and a method for designing thereof. Another object of the present invention is to improve the appearance of colors of a light-emitting device which currently exists or is in use, and which includes a semiconductor light-emitting device of which appearance of colors is not very good. Moreover, another object of the present invention is to provide a method for driving the light-emitting device, an illumination method by the device, and a method for manufacturing the light-emitting device.

These objects are achieved by the light-emitting device that incorporates light-emitting elements and satisfies predetermined requirements, in which .sub.SSL() emitted from the light-emitting device satisfies a predetermined condition.

A light emitting diode including a first light emitting cell and a second light emitting cell separated from each other on a substrate, a first transparent electrode layer electrically connected to the first light emitting cell, an interconnection electrically connecting the first light emitting cell to the second light emitting cell, and a first insulation layer. The first transparent electrode layer is disposed on an upper surface of the first light emitting cell and partially covers a side surface of the first light emitting cell. The first insulation layer separates the first transparent electrode layer from the side surface of the first light emitting cell, and includes an opening to expose a lower semiconductor layer of the first light emitting cell.

This invention discloses a method for the fabrication of GaN-based vertical cavity surface-emitting devices featuring a silicon-diffusion defined current blocking layer (CBL). Such devices include vertical-cavity surface-emitting laser (VCSEL) and resonant-cavity light-emitting diode (RCLED). The silicon-diffused P-type GaN region can be converted into N-type GaN and thereby attaining a current blocking effect under reverse bias. And the surface of the silicon-diffused area is flat so the thickness of subsequent optical coating is uniform across the emitting aperture. Thus, this method effectively reduces the optical-mode field diameter of the device, significantly decreases the spectral width of LED, and produces single-mode emission of VCSEL.

The present disclosure provides a display backplane and a preparation method therefor, and a display apparatus. The display backplane includes a plurality of display units, at least one display unit includes a pixel area and a light transmitting area, the pixel area is configured to perform image display and the light transmitting area is configured to transmit light; and in a plane perpendicular to the display backplane, the light transmitting area includes a substrate and a light transmitting structure layer arranged on the substrate, and the light transmitting structure layer is provided with light transmitting holes.

The present disclosure provides a semiconductor structure and substrate thereof, and a method for manufacturing the same. In the method for manufacturing the substrate, at least one of groove is provided in each unit sub-region on a surface of a premanufactured substrate, and the premanufactured substrate includes at least one unit region, each of the at least one unit region includes at least two unit sub-regions; in one of the at least one unit region, the at least two unit sub-regions respectively have different porosities, the premanufactured substrate is annealed to form a substrate, wherein openings of the grooves are healed to form self-healing layers, and the grooves that are not fully healed form gaps. When a susceptor transfers heat to the substrate, the unit sub-regions with different porosities respectively have different heat conduction efficiencies.

The present disclosure provides a semiconductor structure and substrate thereof, and a method for manufacturing the same. In the method for manufacturing the substrate, at least one of groove is provided in each unit sub-region on a surface of a premanufactured substrate, and the premanufactured substrate includes at least one unit region, each of the at least one unit region includes at least two unit sub-regions; in one of the at least one unit region, the at least two unit sub-regions respectively have different porosities, the premanufactured substrate is annealed to form a substrate, wherein openings of the grooves are healed to form self-healing layers, and the grooves that are not fully healed form gaps. When a susceptor transfers heat to the substrate, the unit sub-regions with different porosities respectively have different heat conduction efficiencies.